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Advance Product Information
June 8, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
DC - 12 GHz Discrete power pHEMT TGF2021-01
Key Features and Performance
Frequency Range: DC - 12 GHz
> 30 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
1mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 75-125mA
(U
nder RF Drive, Id rises from 75mA to 240mA)
Chip Dimensions: 0.57 x 0.53 x 0.10 mm
(0.022 x 0.021 x 0.004 in)
Primary Applications
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Product Description
The TriQuint TGF2021-01 is a discrete
1 mm pHEMT which operates from
DC-12 GHz. The TGF2021-01 is
designed using TriQuint's proven
standard 0.35um power pHEMT
production process.
The TGF2021-01 typically provides
> 30 dBm of saturated output power
with power gain of 11 dB. The
maximum power added efficiency is
59% which makes the TGF2021-01
appropriate for high efficiency
applications.
The TGF2021-01 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2021-01 has a protective
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
16
Frequency (GHz)
Ma
x
i
mu
m Ga
in
(
d
B)
MAG
MSG
Advance Product Information
June 8, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
2
TGF2021-01
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
12.5 V
2/
V
-
Negative Supply Voltage Range
-5V to 0V
I
+
Positive Supply Current
470 mA
2/
| I
G
|
Gate Supply Current
7 mA
P
IN
Input Continuous Wave Power
25 dBm
2/
P
D
Power Dissipation
See note 3
2/ 3/
T
CH
Operating Channel Temperature
150
C
4/
T
M
Mounting Temperature (30 Seconds)
320
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
.
3/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D
(max) = (150
C TBASE
C) / 86.5 (
C/W)
4/
Junction operating temperature will directly affect the device median time to failure
(T
M
). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE CHARACTERISTICS
(T
A
= 25
q
C, Nominal)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Idss
Saturated Drain Current
-
300
-
mA
Gm
Transconductance
-
375
-
mS
V
P
Pinch-off Voltage
-1.5
-1
-0.5
V
V
BGS
Breakdown Voltage
Gate-Source
-30
-
-14
V
V
BGD
Breakdown Voltage
Gate-Drain
-30
-
-14
V
Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown
Advance Product Information
June 8, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
TGF2021-01
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
T
JC
(
q
C/W)
T
M
(HRS)
JC
Thermal Resistance
(channel to backside of carrier)
Vd = 12 V
Idq = 75 mA
Pdiss = 0.9 W
148
86.5
1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
C baseplate temperature.
TABLE III
RF CHARACTERIZATION TABLE
1/
(T
A
= 25
C, Nominal)
SYMBOL
PARAMETER
Vd = 10V
Idq = 75mA
Vd = 12V
Idq = 75mA
UNITS
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
L
3/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
30.8
50
11
26.6
0.464
0.527
148.0
31.5
48
11
31.9
0.496
0.539
141.0
dBm
%
dB
pF
-
Efficiency Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
L
3/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
30
59
11.5
49.0
0.539
0.642
130.6
30.7
55
11
55.6
0.505
0.643
126.3
dBm
%
dB
pF
-
1/ Values in this table are taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
Advance Product Information
June 8, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
4
TGF2021-01
Measured Fixtured Data
Power tuned data at 10GHz
Efficiency tuned data at 10GHz
For power tuned devices at 10GHz
Input matched for maximum gain & output load is:
Vd=12V, Idq=75mA: Rp = 31.9
, Cp = 0.477pF,
= 0.54,
= 141
Vd=10V, Idq=75mA: Rp = 26.6
, Cp = 0.464pF,
= 0.53,
= 148
20
21
22
23
24
25
26
27
28
29
30
31
32
33
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Input Power (dBm)
P
out
(
d
B
m
)
60
80
100
120
140
160
180
200
220
240
260
280
300
320
I
d
(mA)
Vd=12V, Id=75mA
Vd=10V, Id=75mA
`
0
1
2
3
4
5
6
7
8
9
10
11
12
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Input Power (dBm)
Ga
in (dB
)
0
6
12
18
24
30
36
42
48
54
60
66
72
PA
E (%
)
Vd=12V, Id=75mA
Vd=10V, Id=75mA
For efficiency tuned devices at 10GHz:
Input matched for maximum gain & output load is:
Vd=12V, Idq=75mA: Rp = 55.6
, Cp = 0.505pF,
= 0.96,
= 113
Vd=10V, Idq=75mA: Rp = 49.0
, Cp = 0.539pF,
= 0.64,
= 131
20
21
22
23
24
25
26
27
28
29
30
31
32
33
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Input Power (dBm)
P
out (dBm)
60
80
100
120
140
160
180
200
220
240
260
280
300
320
Id
(
m
A)
Vd=12V, Id=75mA
Vd=10V, Id=75mA
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Input Power (dBm)
Ga
in (
d
B
)
0
4
8
12
16
20
24
28
32
36
40
44
48
52
56
60
PA
E (%
)
Vd=12V, Id=75mA
Vd=10V, Id=75mA
Advance Product Information
June 8, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
5
Drain
Lg Rg
Cdg
Rd Ld
Rdg
Gate
Rgs
Cgs
R
i
+
v
i
-
gm
v
i
Rds
Cds
Ls
Rs
Source
Source
Rp, Cp
TGF2021-01
Linear Model for 1mm Unit pHEMT cell
MODEL
PARAMETER
Vd = 8V
Idq = 75mA
Vd = 8V
Idq = 100mA
Vd = 8V
Idq = 125mA
Vd = 10V
Idq = 75mA
Vd = 10V
Idq = 100mA
Vd = 12V
Idq = 75mA
UNITS
Rg
0.45
0.45
0.45
0.45
0.450
0.45
Rs
0.14
0.14
0.14
0.17
0.160
0.19
Rd
0.41
0.43
0.46
0.41
0.450
0.410
gm
0.310
0.318
0.314
0.296
0.303
0.286
S
Cgs
2.39
2.58
2.70
2.61
2.74
2.72
pF
Ri
1.22
1.19
1.20
1.24
1.23
1.27
Cds
0.20
0.201
0.201
0.198
0.199
0.196
pF
Rds
149.1
152.3
158.8
171.8
173.7
187.9
Cgd
0.115
0.107
0.101
0.101
0.098
0.096
pF
Tau
6.29
6.63
6.99
7.19
7.410
7.79
pS
Ls
0.009
0.009
0.009
0.009
0.010
0.010
nH
Lg
0.089
0.089
0.089
0.089
0.089
0.089
nH
Ld
0.120
0.120
0.120
0.120
0.120
0.120
nH
Rgs
33000
33000
35100
28900
35700
24400
Rgd
349000
425000
405000
305000
366000
238000
UPC = 1mm Unit pHEMT Cell
Gate
Source
Source
Drain
UPC
VvC@HUpryy
SrsrrprQyhr
L - via = 0.0135 nH (2x)
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