Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
DC - 12 GHz Discrete power pHEMT TGF2021-04
Key Features and Performance
Frequency Range: DC - 12 GHz
> 36 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
4mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 300-500mA
(U
nder RF Drive, Id rises from 300mA to 960mA)
Chip Dimensions: 0.57 x 1.30 x 0.10 mm
(0.022 x 0.051 x 0.004 in)
Primary Applications
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Product Description
The TriQuint TGF2021-04 is a discrete 4 mm
pHEMT which operates from DC-12 GHz.
The TGF2021-04 is designed using
TriQuint's proven standard 0.35um power
pHEMT production process.
The TGF2021-04 typically provides
> 36 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-04 appropriate for high efficiency
applications.
The TGF2021-04 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-04 has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
16
Frequency (GHz)
Ma
x
imu
m Ga
in
(
d
B)
MAG
MSG
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
2
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
12.5 V
2/
V
-
Negative Supply Voltage Range
-5V to 0V
I
+
Positive Supply Current
1.8 A
2/
| I
G
|
Gate Supply Current
28 mA
P
IN
Input Continuous Wave Power
31 dBm
2/
P
D
Power Dissipation
See note 3
2/ 3/
T
CH
Operating Channel Temperature
150
C
4/
T
M
Mounting Temperature (30 Seconds)
320
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
.
3/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D
(max) = (150
C TBASE
C) / 21.7 (
C/W)
4/
Junction operating temperature will directly affect the device median time to failure
(T
M
). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TGF2021-04
TABLE II
DC PROBE CHARACTERISTICS
(T
A
= 25
q
C, Nominal)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Idss
Saturated Drain Current
-
1200
-
mA
Gm
Transconductance
-
1500
-
mS
V
P
Pinch-off Voltage
-1.5
-1
-0.5
V
V
BGS
Breakdown Voltage
Gate-Source
-30
-
-14
V
V
BGD
Breakdown Voltage
Gate-Drain
-30
-
-14
V
Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
TGF2021-04
TABLE III
RF CHARACTERIZATION TABLE
1/
(T
A
= 25
C, Nominal)
SYMBOL
PARAMETER
Vd = 10V
Idq = 300mA
Vd = 12V
Idq = 300mA
UNITS
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
L
3/, 4/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
36.8
50
11
6.65
1.855
0.847
172.6
37.5
48
11
7.99
1.907
0.847
170.8
dBm
%
dB
pF
-
Efficiency Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
L
3/, 4/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
36
59
11.5
12.25
2.154
0.879
167.6
36.7
55
11
13.90
2.021
0.885
166.3
dBm
%
dB
pF
-
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
T
JC
(
q
C/W)
T
M
(HRS)
JC
Thermal Resistance
(channel to backside of carrier)
Vd = 12 V
Idq = 300 mA
Pdiss = 3.6 W
148
21.7
1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrie
at 70
C baseplate temperature.
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
4
Linear Model for 1mm Unit pHEMT cell
TGF2021-04
Drain
Lg Rg
Cdg
Rd Ld
Rdg
Gate
Rgs
Cgs
R
i
+
v
i
-
gm
v
i
Rds
Cds
Ls
Rs
Source
Source
Rp, Cp
Gate
Source
Source
Drain
UPC
UPC = 1mm Unit pHEMT Cell
VvC@HUpryy
SrsrrprQyhr
MODEL
PARAMETER
Vd = 8V
Idq = 75mA
Vd = 8V
Idq = 100mA
Vd = 8V
Idq = 125mA
Vd = 10V
Idq = 75mA
Vd = 10V
Idq = 100mA
Vd = 12V
Idq = 75mA
UNITS
Rg
0.45
0.45
0.45
0.45
0.450
0.45
Rs
0.14
0.14
0.14
0.17
0.160
0.19
Rd
0.41
0.43
0.46
0.41
0.450
0.410
gm
0.310
0.318
0.314
0.296
0.303
0.286
S
Cgs
2.39
2.58
2.70
2.61
2.74
2.72
pF
Ri
1.22
1.19
1.20
1.24
1.23
1.27
Cds
0.20
0.201
0.201
0.198
0.199
0.196
pF
Rds
149.1
152.3
158.8
171.8
173.7
187.9
Cgd
0.115
0.107
0.101
0.101
0.098
0.096
pF
Tau
6.29
6.63
6.99
7.19
7.410
7.79
pS
Ls
0.009
0.009
0.009
0.009
0.010
0.010
nH
Lg
0.089
0.089
0.089
0.089
0.089
0.089
nH
Ld
0.120
0.120
0.120
0.120
0.120
0.120
nH
Rgs
33000
33000
35100
28900
35700
24400
Rgd
349000
425000
405000
305000
366000
238000
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
5
TGF2021-04
Linear Model for 4mm pHEMT
L - via = 0.0135 nH (5x)
Gate Pads (4x)
Drain Pads (4x)
UPC
UPC
3
6
5
4
UPC
UPC
1
8
7
2
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