Advance Product Information

September19, 2005

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

Frequency (GHz)

imu

m Ga

(

MAG

MSG

DC - 20 GHz Discrete power pHEMT TGF2022-12

Key Features and Performance

Frequency Range: DC - 20 GHz

> 31 dBm Nominal Psat

58% Maximum PAE

39 dBm Nominal OIP3

13 dB Nominal Power Gain

Suitable for high reliability applications

1.2mm x 0.35 m Power pHEMT

Nominal Bias Vd = 8-12V, Idq = 90-150mA
(U

nder RF Drive, Id rises from 90mA to 300mA)

Chip Dimensions: 0.57 x 0.79 x 0.10 mm

(0.022 x 0.031 x 0.004 in)

Primary Applications

Point-to-point Radio

High-reliability space

Military

Base Stations

Broadband Wireless Applications

Product Description

The TriQuint TGF2022-12 is a discrete
1.2 mm pHEMT which operates from
DC-20 GHz. The TGF2022-12 is
designed using TriQuint's proven
standard 0.35um power pHEMT
production process.

The TGF2022-12 typically provides
> 31 dBm of saturated output power with
power gain of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-12 appropriate for
high efficiency applications.

The TGF2022-12 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.

The TGF2022-12 has a protective
surface passivation layer providing
environmental robustness.

Lead-free and RoHS compliant

Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.

Advance Product Information

September19, 2005

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

TABLE I

MAXIMUM RATINGS

Symbol

Parameter 1/

Value

Notes

Positive Supply Voltage

12.5 V

Negative Supply Voltage Range

-5V to 0V

Positive Supply Current

564 mA

| I

Gate Supply Current

14 mA

Input Continuous Wave Power

26 dBm

Power Dissipation

See note 3

2/ 3/

Operating Channel Temperature

150

Mounting Temperature (30 Seconds)

320

STG

Storage Temperature

-65 to 150

These ratings represent the maximum operable values for this device.

Combinations of supply voltage, supply current, input power, and output power shall
not exceed P

For a median life time of 1E+6 hrs, Power dissipation is limited to:

(max) = (150

C TBASE

C) / 69.0 (

C/W)

Junction operating temperature will directly affect the device median time to failure
(T

). For maximum life, it is recommended that junction temperatures be maintained

at the lowest possible levels.

TGF2022-12

TABLE II

DC PROBE CHARACTERISTICS

= 25

C, Nominal)

Symbol

Parameter

Minimum

Typical

Maximum

Unit

Idss

Saturated Drain Current

360

Transconductance

450

Pinch-off Voltage

-1.5

-1

-0.5

BGS

Breakdown Voltage

Gate-Source

-30

-14

BGD

Breakdown Voltage

Gate-Drain

-30

-14

Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown

Advance Product Information

September19, 2005

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

TABLE III

RF CHARACTERIZATION TABLE 1/

= 25

C, Nominal)

SYMBOL

PARAMETER

f = 10 GHz

f = 18 GHz

UNITS

Vd = 10V

Idq = 90 mA

Vd = 12V

Idq = 90 mA

Vd = 10V

Idq = 90 mA

Vd = 12V

Idq = 90 mA

Power Tuned:

Psat

PAE

Gain

Rp 2/

Cp 2/

3/, 4/

Saturated Output Power

Power Added Efficiency

Power Gain

Parallel Resistance

Parallel Capacitance

Load Reflection

coefficient

31.9

52.4

12.9

22.34

0.552

0.580

153.7

32.6

51.9

12.9

28.49

0.515

0.559

145.4

31.1

41.5

8.3

21.77

0.461

0.693

154.8

31.7

37.0

8.0

24.22

0.481

0.713

153.0

dBm

Efficiency

Tuned:

Psat

PAE

Gain

Rp 2/

Cp 2/

3/, 4/

Saturated Output Power

Power Added Efficiency

Power Gain

Parallel Resistance

Parallel Capacitance

Load Reflection

coefficient

31.3

58.3

36.24

0.503

0.569

137.1

32.3

56.0

37.11

0.510

0.577

136.6

30.5

46.0

8.5

25.65

0.550

0.759

153.5

31.1

42.5

8.3

33.49

0.559

0.795

150.6

dBm

OIP3

Output TOI

dBm

TGF2022-12

1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz

2/ Large signal equivalent pHEMT output network

3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz

4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded

TABLE IV

THERMAL INFORMATION

Parameter

Test Conditions

(

C/W)

(HRS)

Thermal Resistance

(channel to backside of carrier)

Vd = 12 V
Idq = 90 mA
Pdiss = 1.08 W

145

1.6 E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70

C baseplate temperature.

Advance Product Information

September19, 2005

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

Drain

Lg Rg

Cdg

Rd Ld

Rdg

Gate

Rgs

Cgs

Rds

Cds

Source

Rp, Cp

TGF2022-12

Linear Model for 0.6 mm Unit pHEMT cell

UPC = 0.6mm Unit pHEMT Cell

Gate

Source

Drain

UPC

8QLW S+(07 FHOO

5HIHUHQFH 3ODQH

MODEL

PARAMETER

Vd = 8V

Idq = 45mA

Vd = 8V

Idq = 60mA

Vd = 8V

Idq = 75mA

Vd = 10V

Idq = 45mA

Vd = 10V

Idq = 60mA

Vd = 12V

Idq = 45mA

UNITS

0.22

0.23

0.24

0.23

0.24

0.40

0.41

0.46

0.45

0.50

0.51

0.52

0.50

0.48

0.195

0.202

0.188

0.195

0.183

Cgs

1.50

1.63

1.70

1.64

1.73

1.71

1.65

1.59

1.58

1.72

1.64

1.73

Cds

0.115

0.116

0.114

0.115

0.114

Rds

243.14

247.08

255.12

278.72

279.31

302.49

Cgd

0.072

0.066

0.063

0.064

0.061

0.060

Tau

5.94

6.23

6.51

6.85

6.95

7.36

0.001

0.108

0.121

0.120

0.118

0.117

Rgs

5110

5140

8310

5110

5420

5120

Rgd

57700

64800

74400

79400

82900

82300

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ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: TGF2022-12