TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
1
1
300um Discrete pHEMT TGF4350-EPU
Key Features and Performance
0.25um pHEMT Technology
DC 22 GHz Frequency Range
1.2 dB NF, 14.5 dB Associated
Gain at 10 GHz, 3V Operation
Floating Source Configuration
Chip Dimensions 0.5080 mm x
0.4064 mm
Primary Applications
Low Noise amplifiers
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
1
3
5
7
9
11
13
15
17
-12
-8
-4
0
4
8
12
Input Power - dBm
Ou
t
p
u
t
Po
we
r
-
d
B
m
,
Ga
i
n
-
d
0
10
20
30
40
50
60
70
80
P
o
w
e
r
A
d
d
e
d
Ef
f
i
cien
cy
-
Pout (dBm)
Gain (dB)
PAE (%)
F = 10 GHz
Vd = 3 V
Iq = 15 mA
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
5
10
15
20
25
30
35
40
45
50
Drain Current - mA
N
o
is
e F
i
gur
e -
d
B
6
7
8
9
10
11
12
13
14
15
16
A
s
s
o
ciated G
a
in -
d
B
NF (dB) Vd = 3 V
NF (dB) Vd = 5 V
NF (dB) Vd = 8 V
Gain (dB) Vd = 3 V
Gain (dB) Vd = 5 V
Gain (dB) Vd = 8 V
F = 10 GHz
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
2
RECOMMENDED MAXIMUM RATINGS
Symbol
Parameter
Value
Notes
V
+
Positive Supply Voltage
7 V
I
+
Positive Supply Current
.085A
3/
P
D
Power Dissipation
0.6 W
P
IN
Input Continuous Wave Power
20 dBm
T
CH
Operating Channel Temperature
150
C
1/, 2/
T
M
Mounting Temperature (30 seconds)
320
C
T
STG
Storage Temperature
-65
C to 150 C
1/
These ratings apply to individual FET
2/
Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/
Nominal value of Idss
DC PROBE TESTS
(T
A
= 25
C 5C)
Symbol
Parameter
Minimum
Maximum Value
Idss
Saturated Drain Current (info
only)
30
141
mA
V
P1-5
Pinch-off Voltage
-1.5
-0.5
V
BV
GS1
Breakdown Voltage gate-source
-30
-8
V
BV
GD1-5
Breakdown Voltage gate-drain
-30
-8
V
Electrical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGF4350-EPU
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
3
G
Lg
Rg
Rgs
Ri
Cgs
Rs
Ls
Cdg
Rdg
R1
R2
Rds
Rd
Ld
VCCS
Cds
FET Elements
Lg = 0.040 nH
Rg = 0.525 Ohms
Rgs = 14500 Ohms
Ri = 4.924 Ohms
Cgs = 0.364 pF
Cdg = 0.042 pF
Rdg = 146000 Ohms
Rs = 0.300 Ohms
Ls = 0.041 nH
Rds = 253.858 Ohms
Cds = 0.080 pF
Rd = 0.833 Ohms
Ld = 0.028 nH
VCCS Parameters
M = 0.091 S
A = 0
R1 = 1E19 Ohms
R2 = 1E19 Ohms
F = 0
T = 4.000 pS
TGA4350EPU pHEMT Model (Vds = 3.0 V and 15mA at T = 25C)
Device is mounted on a 20
mil high ledge. Source
inductance includes that of
source bondwires and ledge
TGF4350-EPU
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGF4350-EPU
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
5
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Process and Assembly Notes
TGF4350-EPU
This device should be attached using conductive epoxy only.
Contact factory for additional details as required.
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