6425
TGL6425-SCC
Digital Attenuator
q
0.5 to 18-GHz Frequency Range
q
5- Bit Step Attenuator
q
15.5-dB Attenuation Range
q
4-dB Typical Inser tion Loss
q
1.6:1 Input/Output SWR
q
2,1844 x 1,8288 x 0,1016 mm (0.086 x 0.072 x 0.004 in.)
The TriQuint TGL6425-SCC is a GaAs MMIC 5- bit FET attenuator which operates fr om
0.5 to 18-GHz. The attenuation step is 0.5- dB and is controlled by 10 input lines. Control bias voltages
are 0 V and - 5 V. The input and output r eturn loss is typically 13 - dB.
This unique absorptive design combines both "T"and "PI"configurations to produce an extremely
small size and low inser tion loss attenuator. The small size and reliability advantage of a monolithic
attenuator over a hybrid design make this device attractive for use in electronic war fare, radar,
telecommunication, and navigation systems for level set, modulation and switching functions.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment
method as well as the thermocompression and thermosonic wire bonding processes. Ground is
provided to the circuitry through vias to the backside metallization.
PHOTO ENLARGEMENT
DESCRIPTION
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
T R I Q U I N T
S E M I C O N D U C T O R , I N C .
TGL6425-SCC
3
TYPICAL
OUTPUT RETURN LOSS
0
6
12
18
24
30
36
0
3
6
9
12
15
18
Frequency (GHz )
Output Return Loss (dB)
0dB
2dB
4dB
8dB
15.5dB
Attenuation
State:
ABSOLUTE
MAXIMUM RATINGS
Input continuous wave power , P
IN
.......................................................................................................... 1 W
Contr ol voltage range, V1, V2, V3, V4, V5, V6, V7, V8, V9, V10 ................................................ -10 V to 0 V
Operating channel temperature, T
CH
* ................................................................................................ 150
C
Mounting temperature (30 sec), T
M
.................................................................................................... 320
C
Storage temperature range, T
STG
............................................................................................ -65 to 150
C
Ratings over operating channel temperature range, T
CH
(unless otherwise noted)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are str ess ratings only and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for
extended periods may af fect device reliability.
*Operating channel temperature, T
CH
, will directly affect the device MTTF . For maximum life, it is recommended
that channel temperature be maintained at the lowest possible level.
RF CHARACTERISTICS
PARAMETER
TEST CONDITIONS
TYPICAL
UNIT
Attenuation
see next table
dB
SWR(in)
Input standing wave ratio
f = 2 - 18 GHz (all states)
1.6:1
-
SWR(out) Output standing wave ratio
f = 2 - 18
GHz (all states)
1.4:1
-
P
1dB
(in)
Input power at 1
-
dB gain compression
see next table
dBm
T
A
= 25C
T
A
= 25C
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGL6425-SCC
5
EQUIVALENT
SCHEMATIC
V
10
V
9
V
8
V
7
V
6
V
5
V
4
V
3
V
2
V
1
RF
OUTPUT
RF
INPUT
2 - 290mm
2 - 62mm
2 - 32mm
2 - 16mm
2 - 30mm
2 - 16mm
2 - 32mm
2 - 62mm
2 - 50mm
2 - 55mm
2 - 70mm
2 - 186mm
100mm
BIAS NETWORK
1
3
2
4
5
RF Input
RF Output
TGL6425
6
7
11
12
10
9
8
V
1
V
2
V
3
V
5
V
10
V
9
V
8
V
6
V
7
V
4
All bias r esistors have a nominal value of 25 - Ohms.
RF connections: Bond using two 1-mil diameter , 20 to 25-mil- length gold bond wires at both RF Input and
RF Output for optimum RF per formance.
DC blocks are not provided at RF por ts.
Close placement of external components is essential to resonant-free performance.
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
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