q
2 to 20 -GHz Frequency Range
q
2-dB Insertion Loss at Midband
q
10-dB Input/Output Return Loss
q
13-dB Variable Attenuation Range
q
Single Polarity Power Supply Required
q
1,702 x 1,219 x 0,152 mm (0.067 x 0.048 x 0.006 in.)
The TriQuint TGL8784 - SCC is a monolithic variable attenuator which operates from
2 to 20 - GHz. This analog attenuator can operate from a single +2.5 v olt power supply if used with an
external variable voltage divider circuit. Typical RF performance at 10 -GHz is: Inser tion Loss 2- dB,
Maximum attenuation: 15 - dB at 10 - GHz, input and output retur n loss: better than 10 - dB. DC block-
ing capacitors are provided on-chip.
The TGL8784-SCC is an absor ptive attenuator designed using MESFET technolog y employing a "PI"
configuration which reduces bias cur rents and simplifies bias networ ks. The broadband capabilities
of this device are versatile in many applications such as telecommunications, military, and space.
This device has a space heritage.
Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment
methods as well as thermocompression and thermosonic wire - bonding processes. The TGL8784 -
SCC is supplied in chip for m and is readily assembled using automated equipment. Groun d is
provided to the circuitr y through vias to the backside metallization.
PHOTO ENLARGEMENT
DESCRIPTION
8784
TGL8784-SCC
Analog Attenuator
T R I Q U I N T
S E M I C O N D U C T O R , I N C .
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGL8784-SCC
2
TYPICAL
ATTENUATION
VS CONTROL VOLTAGE
+V
C
0
2
4
6
8
10
12
14
16
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Attenuation (dB)
TYPICAL
INSERTION LOSS
VS TEMPERATURE
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Insertion Loss (dB)
TYPICAL
INPUT POWER AT
1 dB ATTENUATION
CHANGE VS +V
C
P1dB
0
5
10
15
20
25
30
0.00
1.00
1.25
1.50
1.75
2.00
2.50
+VC Control Voltage (Volts)
Input Power (dBm)
+V
CC
= +2.5V
T
A
= 25C
Attenuation
Control Voltage
+V
C
:
+V
CC
= +2.5V
+V
C
= 0V
Base Plate
Temperature:
+V
CC
= +2.5V
T
A
= 25C
0.00 V
0.75 V
1.00 V
1.25 V
1.50 V
1.75 V
2.00 V
2.50 V
-55
C
-25
C
0
C
+25
C
+55
C
+125
C
2 GHz
10 GHz
18 GHz
Recommended Maximum P
IN
is 24dBm.
P1dB data taken at control voltages (+V
C
) listed at major division points on graph only .
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGL8784-SCC
3
TYPICAL
INPUT POWER AT
1 dB ATTENUATION CHANGE
VS TEMPERATURE
10
13
16
19
22
25
28
-55
-25
0
+25
+55
+125
Temperature (C)
P1dB (dBm)
TYPICAL
INTPUT RETURN LOSS
TYPICAL
OUTTPUT RETURN LOSS
10
12
14
16
18
20
22
24
26
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Input Return Loss (dB)
10
12
14
16
18
20
22
24
26
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Output Return Loss (dB)
+V
C C
= +2.5V
+V
C
= 0V
+V
C
= +2.5V
T
A
= 25 C
Attenuation (+V
C
):
+V
C
= +2.5V
T
A
= 25 C
Attenuation (+V
C
):
2 GHz
10 GHz
18 GHz
0.00V
0.75V
1.00V
1.25V
1.50V
1.75V
2.00V
2.50V
0.00V
0.75V
1.00V
1.25V
1.50V
1.75V
2.00V
2.50V
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGL8784-SCC
4
TYPICAL INSERTION
PHASE VS +V
C
ABSOLUTE
MAXIMUM RATINGS
Positive Supply voltage, + V
CC
................................................................................................................ 10 V
Attenuation control voltage, + V
C
, (+V
CC
> +V
C
)
......................................................................
0 V to +10 V
Input continuous wave power, P
IN
....................................................................................................
24 dBm
Operating channel temperature, T
CH
* .......................................................... ......................................
150 C
Mounting temperature (30 sec), T
M
..................................................................................................
320 C
Storage temperature range, T
STG
...............................................................................................- 65 to 150 C
Ratings o ver operating channel temperature range,
T
CH
(unless otherwise noted)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the de vice.
These are stress ratings only, and functional operation of the de vice at these or an y other conditions beyond
those indicated under "RF Characteristics" is not implied. E xposure to absolute maximum rated conditions for
extended periods may affect device reliability.
* Operating channel temperature directly affects the de vice MTTF. For maximum life, it is recommended that
channel temperature be maintained at the low est possible level.
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.00
0.75
1.00
1.25
1.50
1.75
2.00
2.50
+V
C
Control Voltage (Volts)
S21 Phase - (deg)
+V = +2.5V
T
A
= 25 C
2 GHz
10 GHz
18 GHz
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGL8784-SCC
5
TYPICAL S-PARAMETERS
Frequency
S11
S21
S12
S22
(GHz)
dB
ANG()
dB
ANG()
dB
ANG()
dB
ANG()
2.0
-15.34
-70.1
-1.29
-18.0
-1.29
-17.9
-15.26
-70.5
2.5
-14.92
-75.4
-1.31
-23.1
-1.31
-23.1
-15.22
-77.4
3.0
-14.78
-81.8
-1.34
-28.1
-1.35
-28.1
-14.88
-83.1
3.5
-14.50
-87.0
-1.37
-32.8
-1.37
-32.8
-14.59
-88.8
4.0
-14.16
-92.0
-1.41
-37.5
-1.41
-37.5
-14.43
-94.7
4.5
-13.84
82.1
-1.44
-42.1
-1.45
-42.1
-14.05
79.3
5.0
-13.53
77.2
-1.48
-46.7
-1.48
-46.6
-13.80
73.9
5.5
-13.28
72.6
-1.52
-51.2
-1.52
-51.1
-13.65
68.3
6.0
-13.05
68.1
-1.55
-55.6
-1.55
-55.6
-13.47
62.8
6.5
-12.84
63.8
-1.59
-60.1
-1.59
-60.1
-13.36
57.6
7.0
-12.70
59.5
-1.63
-64.5
-1.63
-64.5
-13.22
53.1
7.5
-12.52
55.4
-1.66
-68.9
-1.66
-68.8
-13.11
47.7
8.0
-12.47
51.8
-1.69
-73.2
-1.69
-73.2
-13.13
43.4
8.5
-12.37
48.2
-1.72
-77.6
-1.72
-77.6
-13.15
38.3
9.0
-12.35
45.1
-1.74
-82.0
-1.74
-82.0
-13.22
33.6
9.5
-12.37
41.2
-1.77
-86.4
-1.77
-86.4
-13.22
29.2
10.0
-12.44
37.9
-1.79
-90.8
-1.79
-90.8
-13.30
25.2
10.5
-12.49
34.2
-1.81
-95.2
-1.82
-95.2
-13.32
20.9
11.0
-12.60
31.1
-1.83
-99.7
-1.83
-99.6
-13.46
16.8
11.5
-12.70
27.8
-1.85
-104.1
-1.85
-104.1
-13.57
12.5
12.0
-12.84
24.6
-1.86
-108.6
-1.86
-108.6
-13.71
8.7
12.5
-13.03
21.2
-1.88
-113.0
-1.88
-113.1
-13.79
4.9
13.0
-13.26
17.7
-1.90
-117.6
-1.90
-117.6
-13.92
1.0
13.5
-13.54
14.1
-1.92
-122.1
-1.93
-122.1
-14.00
-2.3
14.0
-13.87
-169.7
-1.94
-126.6
-1.94
-126.6
-14.05
174.4
14.5
-14.31
-173.8
-1.96
-131.1
-1.96
-131.2
-14.08
171.5
15.0
-14.78
-177.7
-1.97
-135.8
-1.97
-135.8
-14.18
169.0
15.5
-15.32
178.8
-1.99
-140.4
-1.99
-140.4
-14.29
166.4
16.0
-15.75
174.6
-2.02
-145.1
-2.02
-145.1
-14.33
163.5
16.5
-16.23
169.7
-2.05
-149.7
-2.05
-149.7
-14.31
160.2
17.0
-16.73
164.4
-2.07
-154.4
-2.07
-154.4
-14.25
156.6
17.5
-17.44
158.9
-2.09
-159.1
-2.10
-159.1
-14.26
153.2
18.0
-18.18
154.2
-2.12
-163.9
-2.12
-163.9
-14.37
149.9
18.5
-19.00
149.2
-2.14
-168.7
-2.14
-168.7
-14.42
146.8
19.0
-19.94
144.8
-2.16
-173.6
-2.17
-173.6
-14.55
143.8
19.5
-20.86
141.8
-2.20
-178.4
-2.20
-178.4
-14.73
140.8
20.0
-22.03
138.4
-2.21
176.7
-2.22
176.7
-15.13
138.4
20.5
-23.40
136.5
-2.24
171.7
-2.24
171.7
-15.52
136.0
21.0
-25.21
135.6
-2.27
166.6
-2.25
166.6
-15.87
133.3
21.5
-27.33
136.2
-2.29
161.4
-2.30
161.4
-16.28
131.1
22.0
-29.25
143.4
-2.33
156.2
-2.33
156.2
-16.73
128.7
T
A
= 25C, +V
CC
= +2.5 V, +V
C
= 0 V
Reference planes for S - parameter data include bond wires as specified in the "Recom mended Assembly Diagram."
Insertion Loss
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGL8784-SCC
6
TYPICAL S-PARAMETERS
Frequency
S11
S21
S12
S22
(GHz)
dB
ANG()
dB
ANG()
dB
ANG()
dB
ANG()
2.0
-13.53
-140.0
-14.51
-24.0
-14.51
-24.0
-13.82
-143.7
2.5
-13.90
-146.6
-14.64
-26.0
-14.64
-26.0
-14.30
-152.4
3.0
-14.20
-153.5
-14.72
-28.4
-14.72
-28.4
-14.59
-158.5
3.5
-14.55
-157.9
-14.76
-31.0
-14.77
-31.0
-14.94
-163.2
4.0
-14.81
-161.5
-14.81
-33.8
-14.81
-33.7
-15.28
-167.9
4.5
-14.94
14.8
-14.84
-36.6
-14.84
-36.6
-15.42
8.5
5.0
-15.16
12.4
-14.86
-39.6
-14.86
-39.6
-15.70
5.5
5.5
-15.36
9.8
-14.89
-42.7
-14.88
-42.7
-15.91
2.0
6.0
-15.57
7.3
-14.89
-45.8
-14.90
-45.8
-16.07
-1.0
6.5
-15.77
5.5
-14.91
-48.9
-14.92
-49.0
-16.30
-3.9
7.0
-16.02
3.7
-14.93
-52.2
-14.93
-52.2
-16.58
-5.8
7.5
-16.23
2.1
-14.94
-55.5
-14.94
-55.4
-16.68
-8.3
8.0
-16.51
0.7
-14.94
-58.7
-14.94
-58.7
-17.01
-10.4
8.5
-16.77
-0.8
-14.95
-62.1
-14.95
-62.1
-17.13
-13.3
9.0
-17.20
-2.0
-14.95
-65.4
-14.95
-65.4
-17.29
-16.0
9.5
-17.55
-3.7
-14.95
-68.9
-14.96
-68.9
-17.40
-17.7
10.0
-18.00
-5.3
-14.95
-72.2
-14.95
-72.3
-17.60
-20.1
10.5
-18.37
-7.1
-14.95
-75.7
-14.94
-75.7
-17.66
-22.1
11.0
-18.82
-8.4
-14.93
-79.3
-14.94
-79.2
-17.84
-24.7
11.5
-19.32
-9.5
-14.94
-82.7
-14.93
-82.7
-17.93
-27.1
12.0
-19.81
-10.7
-14.92
-86.3
-14.92
-86.3
-18.12
-29.5
12.5
-20.40
-12.2
-14.91
-89.9
-14.91
-89.9
-18.19
-31.9
13.0
-21.04
-13.5
-14.90
-93.4
-14.91
-93.4
-18.22
-34.3
13.5
-21.75
-15.4
-14.90
-97.0
-14.90
-97.1
-18.26
-36.7
14.0
-22.53
162.7
-14.87
-100.6
-14.87
-100.5
-18.33
141.2
14.5
-23.52
160.3
-14.85
-104.2
-14.86
-104.3
-18.37
139.6
15.0
-24.44
157.4
-14.84
-107.9
-14.83
-107.9
-18.52
137.6
15.5
-25.71
155.1
-14.82
-111.7
-14.82
-111.7
-18.75
135.3
16.0
-26.92
151.0
-14.84
-115.4
-14.83
-115.5
-18.96
132.9
16.5
-27.98
148.4
-14.84
-118.9
-14.85
-118.9
-19.02
131.0
17.0
-29.13
144.4
-14.82
-122.4
-14.82
-122.5
-19.00
128.9
17.5
-30.24
140.6
-14.78
-126.0
-14.79
-126.0
-19.03
127.1
18.0
-31.56
135.1
-14.75
-129.8
-14.75
-129.8
-19.27
124.7
18.5
-32.76
129.4
-14.73
-133.5
-14.72
-133.5
-19.44
123.0
19.0
-34.78
124.1
-14.69
-137.3
-14.68
-137.3
-19.73
121.5
19.5
-36.56
125.8
-14.66
-141.0
-14.65
-141.1
-20.11
120.3
20.0
-38.64
119.2
-14.58
-144.8
-14.59
-144.8
-20.73
119.2
20.5
-45.80
100.5
-14.56
-148.7
-14.57
-148.8
-21.31
117.4
21.0
-53.20
6.6
-14.53
-152.9
-14.50
-152.9
-22.01
114.7
21.5
-43.52
-44.2
-14.47
-157.0
-14.50
-157.0
-22.83
114.2
22.0
-39.20
-62.3
-14.48
-161.1
-14.47
-161.1
-23.56
113.7
T
A
= 25C, +V
CC
= 2.5 V, +V
C
=2.5 V
Reference planes for S - parameter data include bond wires as specified in the "Recom mended Assembly Diagram."
Maximum Attenuation
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
TGL8784-SCC
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
7
THERMAL INFORMATION
RF CHARACTERISTICS
PARAMETER
TEST CONDITIONS
NOM
UNIT
R
JC
Thermal resistance, channel to backside
70C Base,+V
CC
=+2.5V,+V
C
=+2.5V *
300
C/W
* P1dB varies depending on +V
C
setting and frequency. See graph on page 2 for details.
+V
CC
=2.5 V, +V
C
= 0.0 V, T
A
= 25C unless stated
* Thermal Resistance analysis based on Max P
IN
=24 dBm and +V
C
set for maximum attenuation.
Power dissipation in Q1 is 135mW which represents a wor st-case condition.
PARAMETER
TEST CONDITIONS
TYP
UNIT
IL
Insertion Loss
f=2.0 GHz , +Vc=0V
1.5
dB
f=10.0 GHz , +Vc=0V
2.0
dB
f=20.0 GHz , +Vc=0V
2.5
dB
Maximum Attenuation
f=2 to 20 GHz, +Vc=+2.5V
15
dB
IRL
Input Return Loss
2.0 to 20 GHz
10
dB
ORL
Output Return Loss
2.0 to 20 GHz
10
dB
P1dB
Input Power at 1dB Atten. Change
2,10 and 18 GHz
*
dBm
TGL8784-SCC
8
EQUIVALENT
SCHEMATIC
RECOMMENDED
ASSEMBLY DIAGRAM
RF Output
RF Input
+Vc
+Vcc
150pF
150pF
Bond using two 1.0-mil diameter, 25 to 30-mil length gold bond wires at both RF Input and RF Output for optimum perfor mance.
Close placement of exter nal components is essential.
RF
IN
+V
C
0V +V
CC
RF
OUT
Q1
100um
Q2
100um
Q3
150um
RF Input
+V
C
+V
CC
RF Output
100 pF
100 pF
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com
MECHANICAL DRAWING
9
TGL8784-SCC
Units: millimeters (inches)
Thickness: 0,1524 (0.006) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad.
Chip size 0,0508 (0.002)
Bond pad #1 (RF Input):
0,0960 x 0,2000 (0.0038 x 0.0079)
Bond pad #2 (RF Output):
0,0960 x 0,2000 (0.0038 x 0.0079)
Bond pad #3 (+V
C
, Attenuation Control):
0,0960 x 0,0960 (0.0038 x 0.0038)
Bond pad #4 (0V):
0,0960 x 0,0960 (0.0038 x 0.0038)
Bond pad #5 (+V
CC
):
0,0960 x 0,0960 (0.0038 x 0.0038)
0,5563
(0.0219)
0,1296
(0.0051)
0,1372
(0.0054)
0,7595
(0.0299)
0,8611
(0.0339)
1,0871
(0.0428)
1,5646
(0.0616)
0,5563
(0.0219)
0.0
0.0
1,7018
(0.0670)
1,2192
(0.0480)
1
2
5
4
3
TriQuint Semiconductor, Inc.
Texas Facilities
(972) 995-8465
www.triquint.com