TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
35 GHz 5-Bit Phase Shifter
TGP2102-EPU
Key Features and Performance
Frequency Range: 32 - 37 GHz
7dB Nominal Insertion Loss
3.5deg RMS Phase Error @ 35GHz
0.4dB RMS Amp. Error @ 35GHz
Negative Control Voltage
Single-Ended Logic
0.25m pHEMT 3MI Technology
Chip dimensions:
1.88 x 0.75 x 0.1 mm
(0.074 x 0.030 x 0.004 inches)
Preliminary Measured Performance
0
1
2
3
4
5
6
7
8
9
10
31
32
33
34
35
36
37
Frequency (GHz)
RMS Phase Shift Error (deg)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
RMS Amplitude Error (dB)
RMS Phase Shift Error
RMS Amplitude Error
-20
-15
-10
-5
0
5
10
15
20
1
3
5
7
9 11 13 15 17 19 21 23 25 27 29 31
State
Phase Er
r
o
r
(deg)
31GHz
32GHz
33GHz
34GHz
35GHz
36GHz
37GHz
Primary Applications
Military Radar
Transmit / Receive
Description
The TriQuint TGP2102-EPU is a 5-bit
digital phase shifter MMIC design using
TriQuint's proven 0.25
m power pHEMT
process to support a variety of Ka-Band
phased array applications including
military radar.
The 5-bit design utilizes a compact
topology that achieves a 1.41mm
2
die
area and high performance.
The TGP2102-EPU provides a 5-bit
digital phase shift function with a nominal
7dB insertion loss and 5
RMS phase
shift error over a bandwidth of 32-37GHz.
The TGP2102-EPU requires a minimum
of off-chip components and operates with
a -5V control voltage. Each device is RF
tested on-wafer to ensure performance
compliance. The device is available in
chip form.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGP2102-EPU
TABLE I
MAXIMUM RATINGS
Symbol
Parameter
Value
Notes
V
C
Control Voltage Range
-8V to 0V
1/ 2/
I
D
Control Supply Current
1 mA
1/ 2/
P
IN
Input Continuous Wave Power
20 dBm
1/ 2/
P
D
Power Dissipation
0.1 W
1/ 2/
T
CH
Operating Channel Temperature
150
0
C
3/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/ These ratings represent the maximum operable values for this device
2/
Combinations of supply voltage, supply current, input power, and output power
shall not exceed P
D
at a package base temperature of 70
C
3/ Junction operating temperature will directly affect the device median time to failure
(MTTF). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
C, Nominal)
(V
C
= -5V)
Parameter
Test
Conditions
Typ
Units
Notes
Insertion Loss
32 37GHz
7
dB
Peak Amplitude Error
32 37GHz
1
dB
RMS Amplitude Error
32 37GHz
0.7
dB
Peak Phase Shift Error
32 37GHz
5
deg
RMS Phase Shift Error
32 37GHz
4
deg
Input Return Loss
32 37GHz
14
dB
Output Return Loss
32 37GHz
7
dB
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Preliminary Measured Data
TGP2102-EPU
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
31
32
33
34
35
36
37
Frequency (GHz)
S21 (dB)
0
1
2
3
4
5
6
7
8
9
10
31
32
33
34
35
36
37
Frequency (GHz)
RMS Phase Shift Error (deg)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
RMS Amplitude Error (dB)
RMS Phase Shift Error
RMS Amplitude Error
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Preliminary Measured Data
TGP2102-EPU
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
31
32
33
34
35
36
37
Frequency (GHz)
S11 (dB)
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
31
32
33
34
35
36
37
Frequency (GHz)
S22 (dB)
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGP2102-EPU
-20
-15
-10
-5
0
5
10
15
20
1
3
5
7
9
11 13 15 17 19 21 23 25 27 29 31
State
Phase Error (deg)
31GHz
32GHz
33GHz
34GHz
35GHz
36GHz
37GHz
Preliminary Measured Data
-5
-4
-3
-2
-1
0
1
2
3
4
5
1
3
5
7
9
11 13 15 17 19 21 23 25 27 29 31
State
Amplitude Error (dB)
31GHz
32GHz
33GHz
34GHz
35GHz
36GHz
37GHz
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
State Table
TGP2102-EPU
State
V-Supply
V-11.25
V-22.5
V-45
V-90
V-180
Phase Shift
0
-5V
0V
0V
0V
0V
0V
Reference
1
-5V
-5V
0V
0V
0V
0V
11.25
2
-5V
0V
-5V
0V
0V
0V
22.5
3
-5V
-5V
-5V
0V
0V
0V
33.75
4
-5V
0V
0V
-5V
0V
0V
45
5
-5V
-5V
0V
-5V
0V
0V
56.25
6
-5V
0V
-5V
-5V
0V
0V
67.5
7
-5V
-5V
-5V
-5V
0V
0V
78.75
8
-5V
0V
0V
0V
-5V
0V
90
9
-5V
-5V
0V
0V
-5V
0V
101.25
10
-5V
0V
-5V
0V
-5V
0V
112.5
11
-5V
-5V
-5V
0V
-5V
0V
123.75
12
-5V
0V
0V
-5V
-5V
0V
135
13
-5V
-5V
0V
-5V
-5V
0V
146.25
14
-5V
0V
-5V
-5V
-5V
0V
157.5
15
-5V
-5V
-5V
-5V
-5V
0V
168.75
16
-5V
0V
0V
0V
0V
-5V
180
17
-5V
-5V
0V
0V
0V
-5V
191.25
18
-5V
0V
-5V
0V
0V
-5V
202.5
19
-5V
-5V
-5V
0V
0V
-5V
213.75
20
-5V
0V
0V
-5V
0V
-5V
225
21
-5V
-5V
0V
-5V
0V
-5V
236.25
22
-5V
0V
-5V
-5V
0V
-5V
247.5
23
-5V
-5V
-5V
-5V
0V
-5V
258.75
24
-5V
0V
0V
0V
-5V
-5V
270
25
-5V
-5V
0V
0V
-5V
-5V
281.25
26
-5V
0V
-5V
0V
-5V
-5V
292.5
27
-5V
-5V
-5V
0V
-5V
-5V
303.75
28
-5V
0V
0V
-5V
-5V
-5V
315
29
-5V
-5V
0V
-5V
-5V
-5V
326.25
30
-5V
0V
-5V
-5V
-5V
-5V
337.5
31
-5V
-5V
-5V
-5V
-5V
-5V
348.75
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Mechanical Drawing
TGP2102-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Chip Assembly & Bonding Diagram
TGP2102-EPU
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
September 15, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200C.
Assembly Process Notes
TGP2102-EPU