TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
High Power DC - 18GHz SPDT FET Switch TGS2306-EPU
Key Features and Performance
DC - 18 GHz Frequency Range
29 dBm Input P1dB @ V
C
= -5V
> 30 dB Isolation
<1 nsec switching speed
Control Voltage Application from
Either Side of MMIC
-3V or -5V Control Voltage
0.5m pHEMT 3MI Technology
Chip Dimensions:
0.83 x 1.11 x 0.10 mm
(0.033 x 0.044 x 0.004 inches)
Preliminary Measured Performance
V
C1
= 0V; V
C2
= -5V
-10
-8
-6
-4
-2
0
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Insertion Loss (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
Isolation, Return Loss (dB)
S21
S11
S22
S13
Desription
The TriQuint TGS2306-EPU is a GaAs
single-pole, double-throw (SPDT) FET
monolithic switch designed to operate
over the DC to 18GHz frequency range.
This switch not only maintains a high
isolation loss and a low insertion loss
across a wide bandwidth, but also has
very low power consumption and high
power handling of 29dBm or greater
input P1dB at V
C
= 5V. These
advantages, along with the small size of
the chip, make the TGS2306-EPU ideal
for use in high-speed radar and
communication applications.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGS2306-EPU
TABLE II
TRUTH TABLE
Selected RF
Output
V
C1
V
C2
RF Out 1
0 V
-5 V
RF Out 2
-5 V
0 V
TABLE I
MAXIMUM RATINGS
Symbol
Parameter
Value
Notes
V
C
Control Voltage
-7 V
1/ 2/
I
C
Control Current
2.25 mA
1/ 2/
P
IN
Input Continuous Wave Power
TBD
1/ 2/
P
D
Power Dissipation
TBD
1/ 2/ 3/
T
CH
Operating Channel Temperature
150
0
C
4/
T
M
Mounting Temperature
(30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/ These ratings represent the maximum operable values for this device
2/
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
at a package base temperature of 70
C
3/ When operated at this bias condition with a baseplate temperature of 70
C, the
MTTF is reduced to 1.0E+6 hours
4/ Junction operating temperature will directly affect the device median time to failure
(MTTF). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGS2306-EPU
Fixtured Measurement
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Insertion Loss (dB)
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Return Loss (dB)
S11
S22
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGS2306-EPU
Fixtured Measurement
-40
-35
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Isolation (dB)
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Insertion Loss (dB)
-35degC
+25degC
+85degC
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Time=0
Off to On
100 psec/div
On to Off
50 psec/div
Switching Speed Measurements
50% Control
Signal to 90%
RF = 480 psec
50% Control
Signal to 10%
RF = 320 psec
Measurement performed using a pulse generator with 100 psec rise/fall times
driving 50 ohm transmission lines that were terminated in 50 ohms and attached
to the VC1 and VC2 control inputs. Pulse generator provided complementary outputs.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGS2306-EPU
Mechanical Drawing
.00 [0.000]
.11 [0.004]
.24 [0.009]
.68 [0.027]
.83 [0.033]
.00 [0.000]
.11 [0.004]
.55 [0.022]
.99 [0.039]
1.11 [0.044]
1
2
3
4
5
6
7
Units: millimeters [inches]
Thickness: 0.10 [0.004] (reference only)
Chip edge to bond pad dimensions are shown to center of bond pads.
Chip size tolerance: 0.05 [0.002]
RF ground through backside
Bond Pad #1
Bond Pad #2
Bond Pad #3
Bond Pad #4
Bond Pad #5
Bond Pad #6
Bond Pad #7
RF Input
VC1
VC2
RF Output 1
RF Output 2
VC2
VC1
0.10 x 0.20
0.10 x 0.10
0.10 x 0.10
0.20 x 0.10
0.20 x 0.10
0.10 x 0.10
0.10 x 0.10
[0.004 x 0.008]
[0.004 x 0.004]
[0.004 x 0.004]
[0.008 x 0.004]
[0.008 x 0.004]
[0.004 x 0.004]
[0.004 x 0.004]
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGS2306-EPU
For optimum insertion loss and return loss, a single 0.001" bondwire of length
35 mils should be used. This will be approximately 0.42nH. Differences in
bondwire length will have an impact on switch performance.
V
C1
& V
C2
can be applied from either side of the MMIC.
DC blocks are required for the RF input and output.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200C.
Assembly Process Notes
TGS2306-EPU
PDF 
ZIP