TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 28, 2003
1
Wideband mmWave VPIN SPDT Switch TGS4301-EPU
Key Features
24-43 GHz High Isolation SPDT
< 2 dB Typical Insertion Loss
-10dB Typical Return Loss
On-Chip Bias resistors
Flexible Bias Pad Configuration
Reflective Switch Design
Integrated DC Blocks on RF Pads
2.164 x 1.055 x 0.1 mm (2.283 mm
2
)
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Radio
Ka Band VSAT
LMDS
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
-5
-4
-3
-2
-1
0
24
26
28
30
32
34
36
38
40
42
44
Frequency (GHz)
I
n
serti
o
n
L
o
ss (d
B)
-60
-55
-50
-45
-40
-35
-30
24
26
28
30
32
34
36
38
40
42
44
Frequency (GHz)
Is
ola
t
ion (
d
B
)
Fixtured Measured Performance
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 28, 2003
2
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
+
Positive Supply Voltage
5V
2/, 3/
V
-
Negative Supply Voltage Range
-8 V
I
+
Positive Supply Current (Quiescent)
22.5 mA
2/ 3/
P
IN
Input Continuous Wave Power
TBD
3/
P
D
Power Dissipated
TBD
3/
T
CH
Operating Channel Temperature
150
C
5/
T
M
Mounting Temperature (30 Seconds)
320
C
4/
T
STG
Storage Temperature
-65 to 150
C
1/ These ratings represent the maximum operable values for this device.
2/
V
+
max
and I
+
max
are both per bias pad.
3/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
.
4/ When operated at this bias condition with a base plate temperature of 70
0
C, the
median life is reduced from TBD to TBD hours.
5/
Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels
TGS4301-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 28, 2003
3
TGS4301-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Measured Fixtured Data
Bias Conditions: Vcontrol=5 V, I+=22 mA
-5
-4
-3
-2
-1
0
24
26
28
30
32
34
36
38
40
42
44
Frequency (GHz)
Insertion Loss (dB)
-60
-55
-50
-45
-40
-35
-30
24
26
28
30
32
34
36
38
40
42
44
Frequency (GHz)
Isolation (dB)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 28, 2003
4
TGS4301-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
-35
-30
-25
-20
-15
-10
-5
0
24
26
28
30
32
34
36
38
40
42
44
Frequency (GHz)
R
e
turn Los
s
(dB
)
Input
Output
Measured Fixtured Data
Bias Conditions: Vcontrol=5 V, I+=22 mA
FUNCTION TABLE
STATE
RF-B
RF-C
VB1 or
VB2
VC2 or
VC1
0
Isolated
Isolated
+ 5V
+ 5 V
1
Isolated
Low-Loss
+ 5V
-5 V
2
Low-Loss
Isolated
-5 V
+ 5V
3
TBD
TBD
-5 V
-5 V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 28, 2003
5
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Mechanical Drawing
TGS4301-EPU
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 28, 2003
6
MMIC Carrier Plate Assembly Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Notes:
1. For biasing flexibility, two sets of bias pads are available for each branch.
-Control Lines 5V (VC2 or VC4, VB1 or VB4) use on-chip resistors for diode current
control.
-Auxiliary pads (VC1 or VC3, VB2 or VB3) can be used if connected to a 20mA current
source.
2. Positive biasing with both VC2 and VC4 or VB1 and VB4 may increase the switch's isolation
at the expense of higher dissipated power.
TGS4301-EPU
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 28, 2003
7
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGS4301-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 C.
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