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Электронный компонент: TGS4302

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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
1
High Power Ka-Band SPDT Switch
TGS4302
Key Features and Performance
27 - 46 GHz Frequency Range
> 33 dBm Input P1dB @ V
C
= 7.5V
On Chip Biasing Resistors
On Chip DC Blocks
< 0.9 dB Typical Insertion Loss
< 4ns Switching Speed
AP640R2-00 Replacement
VPIN Technology
Chip Dimensions:
1.09 x 1.09 x 0.10 mm
(0.043 x 0.043 x 0.004 inches)
Description
The TriQuint TGS4302 is a GaAs single-
pole, double-throw (SPDT) PIN mono-
lithic switch designed to operate over the
Ka-Band frequency range. This switch
maintains a low insertion loss with high
power handling of 33dBm or greater
input P1dB at V
C
= 7.5V. These
advantages, along with the small size of
the chip, make the TGS4302 ideal for
use in communication and
transmit/receive applications.
Primary Applications
Ka-Band Transmit / Receive
Point-to-Point Radio
Point-to-Multipoint Radio
Preliminary Data
V
A
= +5V, I
A
0mA, V
B
= -5V, I
B
= 20mA
-4
-3
-2
-1
0
25
30
35
40
45
50
Frequency (GHz)
Gain
(d
B)
-30
-20
-10
0
10
R
e
t
urn Los
s
/
I
s
ol
a
t
i
on (
d
B
)
S21
S13
S11
S22
Note: This device is early in the characterization process prior to finalizing all electrical and process specifications. Specifications are subject
to change without notice.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
2
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
C
Control Voltage
-5V to +25V
2/, 3/
I
C
Control Current
22.5 mA
2/ 3/
P
IN
Input Continuous Wave Power
38 dBm
3/
T
M
Mounting Temperature (30 Seconds)
320
0
C
4/, 5/
T
ST G
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
V
C
and I
C
are both per bias pad.
3/
Operation above 30dBm requires control voltages above +5V.
4/
When operated at this bias condition with a base plate temperature of 70
0
C, the
median life is TBD hours.
5/
Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels
TGS4302
TABLE II
DC PROBE TEST
(TA = 25
C, Nominal)
LIMITS
NOTES
SYMBOL
MIN
MAX
UNITS
R
FWD
3.5
6
V
REV
-30
-60
V
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
3
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
q
C, Nominal)
(V
A
= +5V, I
A
= 0mA, V
B
= -5V, I
B
= 20mA)
Symbol
Parameter
Test Conditions
Typ
Units
Notes
IL
Insertion Loss
F = 27 30 GHz
F = 30 40 GHz
F = 40 46 GHz
1.3
0.9
1.3
dB
RL
Return Loss
F = 27 46 GHz
10
dB
P1dB
Output Power @
1dB Gain
Compression
V
C
= +5V
V
C
= +7.5V
V
C
= +10V
V
C
= +15V
31
33
35
38
dBm
1/ 2/
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
1/
Frequency = 30GHz
2/
10V & 15V points are extrapolated from the data
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
4
Preliminary Data
I
A
= 0mA, V
B
= -5V, I
B
= 20mA
-2
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
10
12
14
16
18
20
22
24
26
28
30
32
34
36
Pin (dBm)
Gai
n (dB
)
+5V
+7.5V
+10V
+15V
+20V
F = 30GHz
-4
-3
-2
-1
0
25
30
35
40
45
50
Frequency (GHz)
Ga
in (dB
)
-30
-20
-10
0
10
R
e
tur
n
Los
s
/ Is
ola
tion (dB
)
S21
S31
S11
S22
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
5
Preliminary Data
I
A
= 0mA, V
B
= -5V, I
B
= 10mA, F = 30GHz
-2
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
10
12
14
16
18
20
22
24
26
28
30
32
34
36
Pin (dBm)
Gai
n (dB
)
+5V
+7.5V
+10V
+15V
+20V
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
6
Operation at RF power levels >30 dBm requires increasing the positive
voltage level to put a larger reverse bias on the diodes while the negative
voltage level remains at -5 V with a current of approximately 20mA.
Bond pads IA and IB bypass the on-chip series resistors to allow adjustment
of the current to the diodes in their forward biased state.
TABLE IV
TRUTH TABLE
Selected RF
Output
V
A
V
B
RF Out A
+5V @
~0mA
-5V @
20mA
RF Out B
-5V @
20mA
+5V @
~0mA
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
7
Mechanical Drawing
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
8
Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
9
Alternate Chip Assembly & Bonding Diagram
Refer to Table V for values of R vs. control voltage
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
10
TABLE V
BIAS RESISTOR VALUES
Maximum
Negative Bias
Voltage
R
-5V
190 Ohms
-7.5V
315 Ohms
-10V
440 Ohms
-15V
690 Ohms
-20V
940 Ohms
TGS4302
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 6, 2006
11
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200
C.
Assembly Process Notes
TGS4302