TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 26, 2005
1
High Power Ka-Band Absorptive SPDT Switch TGS4304
Key Features and Performance
32 - 40 GHz Frequency Range
> 33 dBm Input P1dB @ V
C
= +10V
On Chip Biasing Resistors
On Chip DC Blocks
< 1.0 dB Midband Insertion Loss
< 4ns Switching Speed
VPIN Technology
Chip Dimensions:
1.58 x 1.10 x 0.10 mm
(0.043 x 0.062 x 0.004 inches)
Description
The TriQuint TGS4304 is a GaAs
absorptive single-pole, double-throw
(SPDT) PIN monolithic switch designed
to operate over the Ka-Band frequency
range. This switch maintains a low
insertion loss with high power handling of
33dBm or greater input P1dB at V
C
=
+10V. These advantages, along with the
small size of the chip, make the
TGS4304 ideal for use in communication
and transmit/receive applications.
The TGS4304 is 100% DC & RF tested
on-wafer to ensure performance
compliance.
Lead free and RoHS compliant.
Primary Applications
Ka-Band Transmit / Receive
Point-to-Point Radio
Point-to-Multipoint Radio
Note: This device is early in the characterization process prior to finalizing all electrical test specifications. Specifications are subject to
change without notice.
Measured Data
V
A
= +5V, I
A
0mA, V
B
= -4V, I
B
= 30mA
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
32
33
34
35
36
37
38
39
40
Frequency (GHz)
S21 (dB)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
S11,S22 (dB)
S21
S11
S22
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 26, 2005
2
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
V
C
Control Voltage
-5V to +25V
2/
I
C
Control Current
34 mA
2/
P
IN
Input Continuous Wave Power
38 dBm
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/ These ratings represent the maximum operable values for this device.
2/
V
C
and I
C
are per bias pad.
3/ Operation above 30dBm requires control voltages above +7.5V.
TGS4304
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
C, Nominal)
(V
A
= +5V, I
A
= 0mA, V
B
= -4V, I
B
= 30mA)
Symbol
Parameter
Test Conditions
Typ
Units Notes
IL
Insertion Loss
F = 32 34 GHz
F = 34 37 GHz
F = 37 40 GHz
1.3
0.9
1.3
dB
RL
Return Loss
F = 32 40 GHz
10
dB
P1dB
Output Power @
1dB Gain
Compression
V
C
= +5V
V
C
= +7.5V
V
C
= +10V
30.5
32
33
dBm
1/ 2/
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
1/ Frequency = 35GHz
2/ Extrapolated from the data
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 26, 2005
3
TGS4304
TABLE III
TRUTH TABLE
Selected RF
Output
V
A
V
B
RF Out A
+5V @
~0mA
-4V @
30mA
RF Out B
-4V @
30mA
+5V @
~0mA
Selected RF
Output
I
A
I
B
RF Out A
+5V @
~0mA
30mA
RF Out B
30mA
+5V @
~0mA
Operation at RF power levels >30 dBm requires increasing the positive
voltage level to put a larger reverse bias on the diodes while the negative
voltage level remains at -4V with a current of approximately 30mA. If you
are using -5V, use alternate assembly with off chip resistors.
Bond pads IA and IB bypass the on-chip series resistors to allow adjustment
of the current to the diodes in their forward biased state.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 26, 2005
4
TGS4304
Measured Performance
On State
Off State
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
Frequency (GHz)
S21 (dB)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
S11,S22 (dB)
S21
S11
S22
-80
-70
-60
-50
-40
-30
-20
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
Frequency (GHz)
S31 (dB)
-30
-20
-10
0
10
20
30
S11,S33 (dB)
S31
S11
S33
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 26, 2005
5
TGS4304
Measured Performance
35 GHz
-2
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
16
18
20
22
24
26
28
30
32
Input Power (dBm)
Insertion Loss (dB)
Vc=5V
Vc=7.5V
Vc=10V
Vc=15V
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