TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
1
SP4T FET Switch
TGS8422-SCC
Key Features and Performance
DC to18 GHz Frequency Range
2.5 dB Insertion Loss at Midband
37 dB Isolation at Midband
Typical Input Power of 19 dBm at
1 dB Gain Compression
Typical SWR of 1.6:1
2.286 x 2.057 x 0.150 mm (0.090 x
0.081x 0.006 in.)
Description
The TriQuint TGS8422-SCC is a GaAs MMIC SP4T FET switch which operates from
DC to 18 GHz. RF Output arm selection is made through 8 control lines. Control bias
voltages are 0 V and -5 V. Typical insertion loss is 2.5 dB at 9 GHz. Isolation is
typically 37 dB from RF Input to RF Outputs 0, 3 and 47 dB from RF Outputs 1 and 2.
The input and output return loss is typically
13 dB.
The reflective, single-pole, four-throw design utilizes one series and four shunt FETs in
each RF Output arm to produce a broadband, low-loss, high-isolation switch. The
monolithic construction simplifies the assembly process and makes this device useful
for electronic warfare, radar and telecommunication applications.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy
attachment methods as well as thermocompression and thermosonic wire-bonding
processes. Ground is provided to the circuitry through vias to the backside
metallization.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
4
Frequency
S
11
S
21
S
12
S
22
Ins e rtion Los s
(GHz)
MAG
ANG()
MAG
ANG()
MAG
ANG()
MAG
ANG()
(dB)
0 .5
0 .1 8
- 3
0 .8 0 5
- 9
0 .8 0 6
- 8
0 .1 7
- 1
1 .9
1 .0
0 .1 8
- 1 3
0 .8 0 1
- 1 6
0 .8 0 2
- 1 5
0 .1 7
- 5
1 .9
2 .0
0 .2 0
- 3 0
0 .7 9 7
- 3 0
0 .7 9 8
- 3 0
0 .1 7
- 2 1
2 .0
3 .0
0 .2 1
- 4 4
0 .7 9 0
- 4 5
0 .7 9 1
- 4 5
0 .1 7
- 3 8
2 .0
4 .0
0 .2 2
- 5 1
0 .7 8 4
- 5 9
0 .7 8 5
- 5 9
0 .1 6
- 4 5
2 .1
5 .0
0 .2 2
- 5 6
0 .7 8 4
- 7 4
0 .7 8 6
- 7 4
0 .1 5
- 5 3
2 .1
6 .0
0 .1 8
- 7 8
0 .7 9 1
- 8 9
0 .7 9 3
- 8 9
0 .1 4
- 8 7
2 .0
7 .0
0 .2 1
- 1 2 4
0 .7 7 6
- 1 0 6
0 .7 7 8
- 1 0 6
0 .1 4
- 1 4 1
2 .2
8 .0
0 .2 6
- 1 3 9
0 .7 4 9
- 1 2 1
0 .7 5 1
- 1 2 1
0 .1 3
- 1 6 2
2 .5
9 .0
0 .2 5
- 1 3 2
0 .7 4 2
- 1 3 5
0 .7 4 3
- 1 3 5
0 .1 2
- 1 4 6
2 .6
1 0 .0
0 .2 0
- 1 3 1
0 .7 4 6
- 1 5 0
0 .7 4 6
- 1 5 0
0 .1 4
- 1 4 8
2 .5
1 1 .0
0 .2 2
- 1 6 7
0 .7 4 7
- 1 6 6
0 .7 4 8
- 1 6 6
0 .1 0
1 6 4
2 .5
1 2 .0
0 .2 7
1 6 1
0 .7 2 1
1 7 8
0 .7 2 3
1 7 8
0 .1 4
1 1 2
2 .8
1 3 .0
0 .2 5
1 5 1
0 .7 0 6
1 6 3
0 .7 0 7
1 6 3
0 .1 8
1 1 9
3 .0
1 4 .0
0 .2 1
1 6 2
0 .7 0 0
1 4 8
0 .7 0 2
1 4 8
0 .1 8
1 3 7
3 .1
1 5 .0
0 .2 6
1 7 0
0 .6 9 7
1 3 4
0 .6 9 8
1 3 4
0 .1 7
1 5 6
3 .1
1 6 .0
0 .2 8
1 5 9
0 .7 0 7
1 1 8
0 .7 0 9
1 1 9
0 .1 4
1 5 6
3 .0
1 7 .0
0 .1 9
1 3 7
0 .7 0 9
1 0 1
0 .7 0 8
1 0 1
0 .1 7
1 1 0
3 .0
1 8 .0
0 .1 8
1 1 5
0 .6 7 3
8 3
0 .6 7 4
8 3
0 .2 4
9 3
3 .4
TYPICAL S-PARAMETERS
RF Input to RF Output 3
Frequency
S
11
S
21
S
12
S
22
Ins e rtion Los s
(GHz)
MAG
ANG()
MAG
ANG()
MAG
ANG()
MAG
ANG()
(dB)
0 .5
0 .1 8
- 3
0 .8 0 3
- 9
0 .8 0 4
- 9
0 .1 7
1
1 .9
1 .0
0 .1 8
- 1 2
0 .7 9 8
- 1 6
0 .8 0 0
- 1 6
0 .1 8
5
2 .0
2 .0
0 .1 9
- 2 7
0 .7 9 4
- 3 2
0 .7 9 6
- 3 1
0 .1 8
1 8
2 .0
3 .0
0 .2 1
- 4 0
0 .7 8 8
- 4 7
0 .7 8 9
- 4 7
0 .1 7
3 1
2 .1
4 .0
0 .2 3
- 4 9
0 .7 8 4
- 6 2
0 .7 8 5
- 6 2
0 .1 5
4 0
2 .1
5 .0
0 .2 1
- 5 6
0 .7 8 3
- 7 8
0 .7 8 5
- 7 7
0 .1 5
6 0
2 .1
6 .0
0 .1 4
- 7 1
0 .7 8 3
- 9 3
0 .7 8 5
- 9 3
0 .1 9
9 0
2 .1
7 .0
0 .1 6
- 1 1 0
0 .7 7 4
- 1 1 0
0 .7 7 6
- 1 0 9
0 .1 5
1 1 0
2 .2
8 .0
0 .2 5
- 1 2 8
0 .7 5 3
- 1 2 5
0 .7 5 5
- 1 2 5
0 .0 7
1 2 6
2 .5
9 .0
0 .2 5
- 1 2 5
0 .7 3 8
- 1 4 0
0 .7 3 9
- 1 4 0
0 .0 9
1 4 0
2 .6
1 0 .0
0 .1 9
- 1 1 8
0 .7 3 9
- 1 5 5
0 .7 3 8
- 1 5 5
0 .1 8
1 4 6
2 .6
1 1 .0
0 .1 9
- 1 4 6
0 .7 3 5
- 1 7 1
0 .7 3 8
- 1 7 1
0 .1 3
1 6 4
2 .7
1 2 .0
0 .2 5
1 7 7
0 .7 2 5
1 7 3
0 .7 2 7
1 7 3
0 .0 7
1 4 5
2 .8
1 3 .0
0 .2 3
1 6 9
0 .7 1 2
1 5 7
0 .7 1 3
1 5 8
0 .1 0
1 4 8
3 .0
1 4 .0
0 .2 5
- 1 7 9
0 .7 0 4
1 4 2
0 .7 0 6
1 4 2
0 .1 6
1 6 9
3 .0
1 5 .0
0 .3 0
1 7 9
0 .6 9 5
1 2 7
0 .6 9 5
1 2 7
0 .1 9
1 7 4
3 .2
1 6 .0
0 .3 1
1 7 0
0 .6 9 7
1 1 1
0 .7 0 1
1 1 1
0 .1 8
1 5 8
3 .1
1 7 .0
0 .2 5
1 6 0
0 .6 9 8
9 3
0 .6 9 4
9 4
0 .2 5
1 2 9
3 .1
1 8 .0
0 .2 8
1 3 3
0 .6 6 4
7 5
0 .6 6 5
7 6
0 .2 7
1 2 5
3 .6
T
A
= 25
o
C
TYPICAL S-PARAMETERS
RF Input to RF Output 2
T
A
= 25
o
C
Reference planes for S-parameter data include bond wires as specified in "Recommended Bias
Network".
TGS8422-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
5
RF CHARACTERISTICS
Selected
CONTROL VOLTAGES (VOLTS)
RF Output
V
1
V
2
V
3
V
4
V
5
V
6
V
7
V
8
RF Ou tp u t 0
0
- 5
- 5
0
- 5
0
- 5
0
RF Ou tp u t 1
- 5
0
- 5
0
0
- 5
- 5
0
RF Ou tp u t 2
- 5
0
0
- 5
- 5
0
- 5
0
RF Ou tp u t 3
- 5
0
- 5
0
- 5
0
0
- 5
TRUTH TABLE
EQUIVALENT SCHEMATIC
PARAMETER
TEST CONDITIONS
TYP UNIT
IL
In s ertio n lo s s
m id b an d
2 .5
d B
ISO
Is o latio n
m id b an d
3 7
d B
SWR(in )
In p u t s tan d in g wave ratio
1 .6 :1
-
SWR(o u t)
Ou tp u t s tan d in g wave ratio
th ro u g h s elected o u tp u t arm
1 .3 :1
-
P
1 d B
(in )
In p u t p o wer at 1 d B g ain co m p res s io n
1 9
d Bm
TGS8422-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
6
RECOMMENDED BIAS
NETWORK
Refer to TriQuint Gallium Arsenide Products Designers' Information on TriQuint's web site.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handling, assembly and test.
TGS8422-SCC
TGS8422
RF Output 3
RF Output 1
RF Output 0
RF Output 2
RF Input
V
1
V
2
V
3
V
4
V
5
V
6
V
7
V
8
3
2
1
13
12
4
5 6
7
8
9 10 11
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