WIRELESS COMMUNICATIONS DIVISION
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1
TQ3632
DATA SHEET
Low Current, 3V PCS
Band CDMA LNA IC
Features
Small size: SOT23-8
Single 3V operation
Low-current operation
Gain Select
High IP3 performance
Few external components
Applications
IS-95 CDMA PCS Mobile Phones
Product Description
The TQ3632 is a low current, 3V, RF LNA IC designed specifically for PCS band
CDMA applications. It's RF performance meets the requirements of products
designed to the IS-95 specifications. The TQ3632 is designed to be used with the
TQ5631 or TQ5633 (CDMA mixer) which provides a complete CDMA receiver for
1900MHz phones.
The LNA incorporates on-chip switches which determine high, low and bypass mode
select. When used with the TQ5631 or TQ5633 (CDMA RFA/mixer), four gain steps
are available for use which provide low current/high IP3 and gain. The RF output
port is internally matched to 50
, greatly simplifying the design and minimizing the
number of external components. The TQ3632 achieves excellent RF performance
with low current consumption, supporting long standby and talk times in portable
applications. Coupled with the very small SOT23-8 package, the part is ideally suited
for PCS band mobile phones.
Electrical Specifications
1
Parameter
Min
Typ
Max
Units
Frequency
1960
MHz
Gain
12.5
dB
Noise Figure
1.5
dB
Input 3
rd
Order Intercept
7.0
dBm
DC supply Current
7.5
mA
Note 1: Test Conditions: Vdd=2.8V, RF=1960MHz, Tc=25C, CDMA High Gain state.
Control
Logic
C2
L1
LNA
gnd
RF
IN
VDD
GND
RF
OUT
50 ohm
RF Out
Control
Logic
GND
C2
C3
TQ3632
Data Sheet
2
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Electrical Characteristics
Parameter
Conditions
Min.
Typ/Nom
Max.
Units
RF Frequency
PCS band
1810
1960
1990
MHz
CDMA Mode-High Gain
Gain
10.5
12.5
dB
Noise Figure
1.5
1.9
dB
Input IP3
5.0
7.0
dBm
Input Return Loss (with external matching)
10
dB
Output Return Loss
10
dB
Supply Current
7.5
9.5
mA
CDMA Mode-High Gain-Low Linearity
Gain
8.5
11.0
dB
Noise Figure
1.8
dB
Input IP3
2.0
4.0
dBm
Input Return Loss (with external matching)
10
dB
Output Return Loss
10
dB
Supply Current
4.5
6.5
mA
Bypass Mode
Gain
-3.0
-2.0
-1.0
dB
Noise Figure
2.0
3.0
dB
Input IP3
20.0
25.0
dBm
Input Return Loss (with external matching)
10
dB
Output Return Loss
10
dB
Supply Current
1.0
2.5
mA
Supply Voltage
2.7
2.8
3.3
V
Note 1: Test Conditions: Vdd=2.8V, RF=1960MHz, T
C
= 25
C, unless otherwise specified.
Note 2: Min/Max limits are at +25
C case temperature, unless otherwise specified.
Absolute Maximum Ratings
Parameter
Value
Units
DC Power Supply
5.0
V
Power Dissipation
500
mW
Operating Temperature
-40 to 85
C
Storage Temperature
-60 to 150
C
Signal level on inputs/outputs
+20
dBm
Voltage to any non supply pin
+0.3
V
TQ3632
Data Sheet
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3
Typical Performance
Test Conditions, unless Otherwise Specified: Vdd=2.8V, Tc=25C, RF=1960MHz
CDMA High Gain Mode
Gain v Freq v Temp
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
1920
1940
1960
1980
2000
Frequency (MHz)
Gai
n
(
d
B)
-30C
+25C
+85C
CDMA High Gain Mode
IIP3 v Freq v Temp
7.0
7.5
8.0
8.5
9.0
9.5
10.0
1920
1940
1960
1980
2000
Frequency (MHz)
IIP
3
(d
B
m
)
-30C
+25C
+85C
CDMA High Gain Mode
Noise Figure v Freq v Temp
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
1920
1940
1960
1980
2000
Frequency (MHz)
Noi
se Fi
gur
e (
d
B)
-30C
+25C
+85C
CDMA High Gain Mode
Idd v Vdd v Temp
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
2.5
2.7
2.9
3.1
3.3
3.5
Vdd (V)
I
dd (
m
A)
-30C
+25C
+85C
High Gain/Low Linearity Mode
Gain v Freq v Temp
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
1920
1940
1960
1980
2000
Frequency (MHz)
Gai
n
(
d
B)
-30C
+25C
+85C
High Gain/Low Linearity Mode
IIP3 v Freq v Temp
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1920
1940
1960
1980
2000
Frequency (MHz)
IIP
3
(d
B
m
)
-30C
+25C
+85C
TQ3632
Data Sheet
4
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High Gain/Low Linearity Mode
Noise Figure v Freq v Temp
0.00
0.50
1.00
1.50
2.00
2.50
1920
1940
1960
1980
2000
Frequency (MHz)
Noi
se Fi
gur
e (
d
B)
-30C
+25C
+85C
High Gain/Low Linearity Mode
Idd v Vdd v Temp
3.00
3.50
4.00
4.50
5.00
5.50
6.00
2.5
2.7
2.9
3.1
3.3
3.5
Vdd (V)
I
dd (
m
A)
-30C
+25C
+85C
BYPASS Mode
Gain v Freq v Temp
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
1920
1940
1960
1980
2000
Frequency (MHz)
G
a
in
(d
B
)
-30C
+25C
+85C
BYPASS Mode
IIP3 v Freq v Temp
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
1920
1940
1960
1980
2000
Frequency (MHz)
IIP
3
(d
B
m
)
-30C
+25C
+85C
BYPASS Mode
Noise Figure v Freq v Temp
0.00
0.50
1.00
1.50
2.00
2.50
3.00
1920
1940
1960
1980
2000
Frequency (MHz)
Noi
se Fi
gur
e (
d
B)
-30C
+25C
+85C
BYPASS Mode
Idd v Vdd v Temp
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
2.5
2.7
2.9
3.1
3.3
3.5
Vdd (V)
I
dd (
m
A)
-30C
+25C
+85C
TQ3632
Data Sheet
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5
Application/Test Circuit
C2
LNA
GND
RF in
Vdd
GND
(paddle)
RF
out
GND
C3
Control
Logic
LNA input
LNA output
Vdd
R1
C7
C8
L1
Control Logic
Lbrd
Bill of Material for TQ3632 LNA Application/Test Circuit
Component
Reference Designator
Part Number
Value
Size
Manufacturer
Receiver IC
U1
TQ3631
SOT23-8
TriQuint Semiconductor
Capacitor
C7
4.7pF
0402
Capacitor
C8
1.5pF
0402
Resistor
R1
3.3
0402
Inductor
L1
4.7nH
0402
Panasonic
Inductor
Lbrd
See application note
TQ3632
Data Sheet
6
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TQ3632 Product Description
The TQ3632 LNA uses a cascode low noise amplifier along with
signal path switching. A bias control circuit sets the quiescent
current for each mode and ensures peak performance over
process and temperature, see Figure 1. In the application,
CMOS level signals are applied to pins 1 and 5 and are
decoded by an internal logic circuit, this sets the device to the
desired mode. See Table 1 for truth table.
In the high gain mode, switches S1, S2, and S5 are closed, with
switches S3 and S4 open. In the bypass mode, switches S1,
S2, and S5 are open, with switches S3 and S4 closed. Six
internal switches ensures there are no parasitic feedback paths
for the RF signal. In the AMPS mode, control logic switches the
LNA into a low current bias condition.
Only three external components are needed. The chip uses an
external cap and inductor for the input match to pin 3. The
output is internally matched to 50 ohms at pin 6. A Vdd bypass
cap is required close to pin 8.
External degeneration of the cascode is required between pin 4
and ground. However, a small amount of PC board trace can
be used as the inductor. Alternatively, if an extra component
can be tolerated, a small value chip inductor could be used.
See Figure 2.
Figure 1 TQ3632 Simplified Schematic
Operation
MODE
C2
C3
Typical Gain
High Gain
0
1
0
0
13(dB)
High Gain
Low linearity
0
1
11(dB)
Bypass
1
1
-2(dB)
Table 1 LNA States and Control Bits
LNA Input Network Design
Input network design for most LNA's is a straightforward
compromise between noise figure and gain. The TQ3632 is no
exception, even though it has 3 different modes. The device
was designed so that one only needs to optimize the input
match in the high gain mode. As long as the proper grounding
and source inductance are used, the other two modes will
perform well with the same match.
It is probably wise to synthesize the matching network
component values for some intermediate range of Gamma
values, and then by experimentation, find the one which
provides the best compromise between noise figure and gain.
The quality of the chip ground will have some effect on the
match, which is why some experimentation will likely be needed.
The input match will affect the output match to some degree, so
S22 should be monitored.
The values used on our evaluation board may be used as a
starting point.
Noise Parameter Analysis
A noise parameter analysis is shown on the next page for the
high gain and high gain low linearity modes. A "nominal" device
was mounted directly on a standard evaluation board without a
matching network (thru connected). The input reference plane
was set at pin 3 and board loss was included in the calculations.
C7 was set to 4.7pF.
1
2
8
7
6
5
3
4
S1
S2
S5
S3
S4
S6
Control
Logic C2
L1
C8
Lbrd
Control
Logic C3
LNA OUT
VDD
C7
R1
GND
RFIN
DC
GND
RF
OUT
GND
VDD
LNA IN
Bias and Switch Control Logic
TQ3632
Data Sheet
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7
Gamma Opt analysis for TQ3632 High Gain Mode
Freq.
(MHz)
Opt
Angle
Fmin
(dB)
R noise
1800
0.454
70.5
1.534
29.27
1960
0.390
84.8
1.209
18.47
2040
0.354
87.3
1.369
16.94
Gamma Opt analysis for TQ3632 High Gain Low Linearity
Mode
Freq.
(MHz)
Opt
Angle
Fmin
(dB)
R noise
1800
0.454
70.5
1.534
29.27
1960
0.390
84.8
1.209
18.47
2040
0.354
87.3
1.369
16.94
Gain Control via Pin 4 Inductance
The source connection of the LNA cascode is brought out
separately through pin 4. That allows the designer to make
some range of gain adjustment. The total amount of inductance
present at the source of the cascode is equal to the bond wire
plus package plus external inductance. One should generally
use an external inductance such that gain in the high gain
CDMA mode = 13.0dB. Although it is possible to increase the
gain of the TQ3632 by using little or no degeneration, input
intercept will be degraded.
Figure 2 shows how a spiral PC board trace can be used as the
external inductance. It is suggested that such a circuit be used
for the initial design prototype. Then the optimum inductance
can be found by simply solder bridging across the inductor. The
final PC board design can then include the proper shorted
version of the inductor.
Figure 2 Showing Lbrd and Grounding on Evaluation Board
Selection of the Vdd Bypass Cap for Optimum
Performance
The Vdd bypass capacitor has the largest effect on the LNA
output match, and is required for proper operation. Because the
input match affects the output match to some degree as well,
the process of picking the bypass cap value involves some
iteration. First, an input match is selected which gives adequate
gain and noise figure. Then the bypass capacitor is varied to
TQ3632
Data Sheet
8
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give the best output match. The demo board achieves 11-12dB
of return loss which is adequate for connection directly to the
input of a SAW filter.
Grounding
An optimal ground for the device is important in order to achieve
datasheet specified performance. Symptoms of a poor ground
include reduced gain and the inability to achieve <2:1 VSWR at
the output when the input is matched. It is recommended to use
multiple vias to a mid ground plane layer. The vias at pins 2 and
7 to this layer should be as close to the lead pads as possible
Additionally, the ground return on the Vdd bypass cap should
provide minimal inductance back to chip pins 2 and 7.
TQ3632 S-Parameters
Following are S-Parameter graphs for the high gain and high
gain low linearity modes. Data was taken on a single "nominal"
device at 2.8v Vdd. The reference planes were set at the end of
the package pins.
TQ3632 High Gain Mode S-Paremeters S11
TQ3632 High Gain Mode S-Parameters S12
TQ3632 High Gain Mode S-Parameters S21
TQ3632
Data Sheet
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9
TQ3632 High Gain Mode S-Parameters S22
TQ3632 High Gain Low Linearity Mode S Parameters S11
TQ3632 High Gain Low Linearity Mode S-Parameters S21
TQ3632 High Gain Low Linearity Mode S-Parameters S12
TQ3632
Data Sheet
10
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TQ3632 High Gain Low Linearity Mode S-Parameters S22
TQ3632
Data Sheet
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11
Package Pinout
Pin Descriptions
Pin Name
Pin #
Description and Usage
C2
1
Control logic 2
GND
2
Ground, paddle
RF IN
3
RF input, off-chip matching required
DC GND
4
Source of input FET
C3
5
Control logic 3
RF OUT
6
RF output, no matching required
GND
7
Ground
Vdd
8
LNA Vdd, typical 2.8V, C2 capacitor required
Control
Logic
C2
L1
GND
RF
IN
VDD
GND
RF
OUT
50 ohm
RF Out
Control
Logic
GND
C2
C3
TQ3632
Data Sheet
Additional Information
For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint:
Web: www.triquint.com
Tel: (503) 615-9000
Email: info_wireless@tqs.com
Fax: (503) 615-8900
For technical questions and additional information on specific applications:
Email: info_wireless@tqs.com
The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of
this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or
licenses to any of the circuits described herein are implied or granted to any third party.
TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems.
Copyright 2000 TriQuint Semiconductor, Inc. All rights reserved.
Revision A, April, 2000
12
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Package Type: SOT23-8 Plastic Package
DESIGNATION
DESCRIPTION
METRIC
ENGLISH
NOTE
A
OVERALL HEIGHT
1.20 +/-.25 mm
0.05 +/-.250 in
3
A1
STANDOFF
.100 +/-.05 mm
.004 +/-.002 in
3
b
LEAD WIDTH
.365 mm TYP
.014 in
3
c
LEAD THICKNESS
.127 mm TYP
.005 in
3
D
PACKAGE LENGTH
2.90 +/-.10 mm
.114 +/-.004 in
1,3
e
LEAD PITCH
.65 mm TYP
.026 in
3
E
LEAD TIP SPAN
2.80 +/-.20 mm
.110 +/-.008 in
3
E1
PACKAGE WIDTH
1.60 +/-.10 mm
.063 +/-.004 in
2,3
L
FOOT LENGTH
.45 +/-.10 mm
.018 +/-.004 in
3
Theta
FOOT ANGLE
1.5 +/-1.5 DEG
1.5 +/-1.5 DEG
Notes
1. The package length dimension includes allowance for mold mismatch and flashing.
2. The package width dimension includes allowance for mold mismatch and flashing.
3. Primary dimensions are in metric millimeters. The English equivalents are calculated and subject to rounding error.
E
L
A1
b
e
FUSED LEAD
c
A
Note 1
PIN 1
E1
Note 2
DIE