WIRELESS COMMUNICATIONS DIVISION

For additional information and latest specifications, see our website: www.triquint.com

TQ5132

DATA SHEET

3V Cellular Band
CDMA/AMPS RFA/Mixer
IC

Features

Small size: SOT23-8

Single 3V operation

Low-current operation

Gain Select

Mode Select

High IP3 performance

Few external components

Applications

IS-95 CDMA Mobile Phones

AMPS Mobile Phones

Dual Mode CDMA Cellular application

Product Description

The TQ5132 is a 3V, RFA/Mixer IC designed specifically for Cellular band
CDMA/AMPS applications. It's RF performance meets the requirements of products
designed to the IS-95 and AMPS standards. The TQ5132 is designed to be used
with the TQ3131 or TQ3132 (CDMA/AMPS LNA) which provides a complete CDMA
receiver for 800MHz dual-mode phones.

The RFA/Mixer incorporates on-chip switches which determine CDMA, AMPS and
bypass mode select. When used with the TQ3131 or TQ3132 (CDMA/AMPS LNA),
four gain steps are available. The RF input port is internally matched to 50

greatly simplifying the design and keeping the number of external components to a
minimum. The TQ5132 achieves good RF performance with low current
consumption, supporting long standby times in portable applications. Coupled with
the very small SOT23-8 package, the part is ideally suited for Cellular band mobile
phones.

Electrical Specifications

Parameter

Min

Typ

Max

Units

Frequency

881

MHz

Gain

15.0

Noise Figure

4.5

Input 3

Order Intercept

2.5

dBm

DC supply Current

15.0

Note 1: Test Conditions: Vdd=2.8V, RF=881MHz, LO=966MHz, IF=85MHz, Ta=25C, CDMA High Gain

state.

VDD

GND

GIC

Out

AMPS
IF Out

Mode Select/

LO Input

Out

IFA Gain

Select

CDMA

IF Out

Control 2

Control 1

Control 3

RFA Gain

Select

TQ5132

Data Sheet

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Electrical Characteristics

Parameter

Conditions

Min.

Typ/Nom

Max.

Units

RF Frequency

Cellular band

869

881

894

MHz

IF Frequency Range

High side LO

130

MHz

CDMA Mode-High Gain

Gain

12.6

16.0

18.2

Noise Figure

4.5

7.2

Input IP3

-2.2

2.5

dBm

Supply Current (T

= 25

�

18.0

21.0

CDMA Mode-High Gain Low Linearity

Gain

18.5

Noise Figure

4.0

Input IP3

-0.3

dBm

Supply Current (T

= 25

�

18.0

CDMA Mode-Mid Gain

Gain

5.0

Noise Figure

11.0

Input IP3

14.0

dBm

Supply Current (T

= 25

�

13.5

CDMA Mode-Low Gain

Gain

5.2

8.0

10.2

Noise Figure

10.0

12.8

Input IP3

7.4

11.0

dBm

Supply Current (T

= 25

�

14.0

17.5

AMPS Mode

Gain

7.7

12.0

12.6

Noise Figure

5.0

7.7

Input IP3

-4.9

-1.0

dBm

Supply Current (T

= 25

�

9.0

10.3

Supply Voltage

2.8

3.15

Note 1: Test Conditions: Vdd=2.8 to 3.15V, RF=869-894MHz, LO=High side �6 to �2dBm, IF=85MHz, T

= -30 to 85

�

C, unless otherwise specified.

Absolute Maximum Ratings
Parameter

Value

Units

DC Power Supply

5.0

Power Dissipation

500

Operating Temperature

-30 to 85

Storage Temperature

-60 to 150

Signal level on inputs/outputs

+20

dBm

Voltage to any non supply pin

+0.3

TQ5132

Data Sheet

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Typical Performance,

Note: HG Mode=CDMA High Gain, LG Mode=CDMA Low Gain

Test Conditions, unless otherwise specified: Vdd=2.8V, Ta=25C, RF=881MHz, LO=966MHz, LO input=-4dBm, IF=85MHz

Gain vs. Frequency

869

875

882

888

894

Frequency (MHz)

Gai

n
(
d
B)

HG Mode
LG Mode
AMPS

Gain vs. Temperature

-30

Temperature (Celsius)

in (dB)

HG Mode

LG Mode

AMPS

Input IP3 vs. Frequency

-2

869

875

882

888

894

Frequency (MHz)

I
nput

I
P
3 (

d
Bm)

HG Mode
LG Mode
AMPS

Noise Figure vs. Frequency

869

875

882

888

894

Frequency (MHz)

Noi

se Fi

gur

e (

d
B)

HG Mode
LG Mode
AMPS

Input IP3 vs. Temperature

-4

-2

-30

Temperature (Celsius)

I
nput

I
P
3 (

d
Bm)

HG Mode
LG Mode
AMPS

Noise Figure vs. Temperature

-30

Temperature (Celsius)

Noi

se Fi

gur

e (

d
B)

HG Mode
LG Mode
AMPS

TQ5132

Data Sheet

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Idd vs. Temperature

-30

Temperature (Celsius)

I
dd (

HG Mode

LG Mode

AMPS

Gain vs. LO Power

-6

-4

-2

LO Power (dBm)

a
in

)

HG Mode
LG Mode
AMPS

Input IP3 vs. LO Power

-4

-2

-6

-4

-2

LO Power (dBm)

I
nput

I
P
3 (

d
Bm)

HG Mode

LG Mode

AMPS

Noise Figure vs. LO Power

-6

-4

-2

LO Power (dBm)

Noi

se Fi

gur

e (

d
B)

HG Mode
LG Mode
AMPS

Gain vs. Vdd

2.8

3.15

Vdd (volts)

Gai

n
(
d
B)

HG Mode
LG Mode
AMPS

Input IP3 vs. Vdd

-2

2.8

3.15

Vdd (volts)

I
nput

I
P
3 (

d
Bm)

HG Mode
LG Mode
AMPS

TQ5132

Data Sheet

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Application/Test Circuit

Bill of Material for TQ5132 RF AMP/Mixer

Component

Reference Designator

Part Number

Value

Size

Manufacturer

Receiver IC

TQ5132

SOT23-8

TriQuint Semiconductor

Capacitor

.022

�

0402

Capacitor

C10

18pF

0402

Capacitor

C5,C8

1200pF

0402

Capacitor

27pF

0402

Capacitor

30pF

0402

Capacitor

15pF

0402

Capacitor

C12

100pF

0402

Capacitor

C22

2.7pF

0402

Resistor

R1, R4

5.1K

0402

Resistor

6.8

0402

Resistor

180

0402

Inductor

180nH

0805

Inductor

270nH

0805

Inductor

18nH

0402

VDD

Mode Select

GND

RF input

GIC

Out

IF Out

VDD

AMP's
IF Out

Gain

Select

VDD

RF AMP

Mixer

CDMA

Out

VDD

C10

C12

IF AMP

Gain

Select

C22

Control 2

Control 3

Control 1

INPUT

TQ5132

Data Sheet

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TQ5132 Product Description

The TQ5132 is a miniature low noise mixer (downconverter) in a
small SOT-23-8 package (2.9X2.8X1.14 mm) with operation at
2.8v. The TQ5132 specs are designed to be compatible with IS-
98 Interim Standard for Dual-Mode CDMA cellular systems. The
low noise mixer features an AMPS control pin for Gain, Intercept
and Current (GIC pin) and it has excellent intermodulation
characteristics with high intercept point in all modes. For
optimum performance the TQ5132 RF frequency of operation
should be from 869 to 894 MHz. The IF range is from 85 to 130
MHz and its injection mode for the local oscillator is high side.

Operation

The TQ5132 is a single-ended mixer with switching capabilities
for the various signal levels found in CDMA applications. The
TQ5132 combines a RF amplifier, a LO driver amplifier, and
separate digitally controlled IF amplifiers for CDMA and AMPS
outputs.

RF / C2

Mx Vdd

GND

GIC

CDMA

Output

IFA GS / C3

LO / C1

AMPS

Output

TQ5132

Figure 1. TQ5132 Block Diagram

Circuit Description

RF Amplifier

The TQ5132 has an integrated pre-amplifier stage in a cascode
configuration. The output is internally matched to 50 ohms at
881MHz. Pin 1 requires an external match that is set to deliver a
2:1 VSWR in both the low and high gain modes (i.e. RFA is on
or off). Figure 2 shows an approximated impedance at pin 1
(RFA input) to implement any desired match. Remember to
apply the LO signal when tuning the RF match.

2.0

1.0

0.5

-0.5

-1.0

-2.0

1.0

2.0

0.5

0.76 @ -65.5
z = 0.44 - j 1.46
y = 0.19 + j 0.63

Input

Impedance

Freq=881MHz

TQ5132

Figure 2. TQ5132 RF Amplifier Input Impedance

LO Buffer Amplifier

The LO buffer amplifier is a grounded gate FET with a
broadband match to 50

. It has on-chip DC block and on-chip

LO tuning circuit to shape the frequency response and drive it to
a level suitable for the gate of the mixer FET. Thus the optimum
LO frequency range is fixed and centered around 990mhz. The
LO is limited to high-side injection mode and it operates from
950MHz to 1030MHz. The input to the LO buffer is through pin 7
which also feeds the control line (C1) that selects the mixer
mode of operation, either CDMA or AMPS. Due to this logic
control, the only external component required at the LO port is a
series capacitor to prevent DC from traveling to other parts of
the system. The LO drive level of operation should be between -
7 and 0 dBm. Best performance is obtained between �6 and �
2 dBm.

LO/filter/Mixer interaction

The physical position of the image reject filter is likely to have an
effect on the performance of the mixer especially in the Low
Gain mode where the RF amplifier is switched out. This is
primarily due to self-mixing of the LO energy bouncing from the
filter back into the mixer either out-of-phase or in-phase creating
an offset in magnitude. To minimize this effect, TriQuint
recommends placing the image-reject filter as close to the IC as
possible. In TriQuint's demo board its position is 42 mils from
the pad of the matching inductor and 126 mils from the IC pad.
This location for the image-reject filter works well.

TQ5132

Data Sheet

For additional information and latest specifications, see our website: www.triquint.com

CDMA IF Amplifier

The CDMA IF amplifier is an open drain stage with a gain step
to adjust the output power levels according to the system
requirement. No quiescent current adjustments are possible in
this mode since the self-bias circuit is on-chip. While the IF
output can be tuned for frequencies as high as 500 MHz, the
downconverter performance is limited by the internal tuned
circuit of the LO buffer amplifier. The highest IF that can be used
without significant deviation from typical performance is 130
MHz. This output is a high impedance open drain FET z = 5.47
� j 0.71

(normalized). The match requires a RF choke to Vdd

for proper biasing (see figure 3). Typical CDMA IF output
impedance is shown in figure 4. The gain of the CDMA IF
amplifier can be adjusted according to the degeneration resistor
value R2 (see figure 5).

Note: These values were optimized for TriQuint's 5131 Demo
board. The discrepancy between these values and those of the
customer's application may differ due to board and component
parasitics.

Vdd

L2=180nH

CDMA

Output

TQ5132

C7=30pF

C6=27pF

Figure 3. TQ5132 CDMA IF Output Match (IF = 85MHz)

2.0

1.0

0.5

-0.5

-1.0

-2.0

1.0

2.0

0.5

0.70 @ -2.8
z = 5.47- j 0.71
y = 0.18 + j 0.02

CDIF output

Impedance

TQ5132

Freq=85MHz

Figure 4. TQ5132 CDMA IF Output Impedance at Pin 4

AMPS IF Amplifier

The source of the AMPS IF amplifier is connected directly to pin
3. This allows the system designer to adjust Gain, output
Intercept and Current (GIC) by adding an external self-bias
circuit at this pin (see figure 5). A large bypass capacitor value
in the self-bias circuit minimizes the effects of low frequency
components present at this pin. TriQuint recommends 0.022uF
or greater. The AMPS IF amplifier gain is only mildly affected by
the value of R2.

Note: These values were optimized for TriQuint's 5131 Demo
board. The discrepancy between these values and those of the
customer's application may differ due to board and component
parasitics.

TQ5132

C4 = 0.022uF

R2 = 6.8

R3 = 180

Figure 5. TQ5132 AMPS GIC pin

Once the operating point is chosen, the designer still has
flexibility to adjust gain and intercept by varying the ratio of the
DC bias resistors, R2/R3. Maximum gain is obtained when the
total DC resistance (R2 + R3) at pin 3 is bypassed.

The normalized impedance of the AMPS IF output is z = 15.4 � j
2.87

. This particular measurement was taken on the 5132

demo board by lifting pin 5 of the PCB pad and soldering the
center conductor of a semirigid probe next to it. The outer
conductor was grounded close to the pin and its electrical length
dialed as a port extension in order to move the calibration
reference plane right at the tip of the probe. Keep in mind that
the total DC bias resistance in the GIC pin must be selected
before taking this measurement. When designing the PCB, it is
recommended to place the self-bias circuit of the amplifier as
close to the pin as possible to minimize possible loading effects
that might cause oscillation. Similarly, the shunt capacitor C10

TQ5132

Data Sheet

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of the IF match should be grounded close to the IC (see figure
6).

After designing the IF match in simulation using the given S-
parameters, some adjustment might be needed when
implementing the match on the bench. At this point remember
that the LO driver amplifier must be turned on since the IFA is
directly coupled to the mixer FET. Figure 6 shows the circuit
topology and component values designed for TriQuint's demo
board. Figure 7 shows a typical AMPS IF output impedance.

Note: These values were optimized for TriQuint's 5131 Demo
board. The discrepancy between these values and those of the
customer's application may differ due to board and component
parasitics.

Vdd

L3=270nH

TQ5132

AMPS

Output

C10=18pF

C9=15pF

Figure 6. TQ5132 AMPS IF Output Match (IF = 85 MHz)

2.0

1.0

0.5

-0.5

-1.0

-2.0

1.0

2.0

0.5

0.9 @ - 2.9
z = 15.4 - j 7.23
y = 0.05 + j 0.02

AMIF output

Impedance

Freq=85MHz

TQ5132

Figure 7. TQ5132 AMPS IF Output Impedance at Pin 5

Vdd Decoupling

External spurious signals at high and low frequencies can
appear on the Vdd lines. Proper decoupling of these lines is
required to eliminate unwanted noise. The recommended

decoupling network has a PI configuration. On the main Vdd
node, a large capacitor of 0.022 uF is used, followed by a 3.3 or
10 ohm resistor in series with the supply line. Last, a bypass
capacitor that presents a low impedance to ground at the RF
frequency is normally placed very close to the pin. However, in
the TQ5132 this bypass capacitor on the IC node is on-chip and
the external one near the IC is not needed.

Board Layout Recommendations

All ground pins should be kept close to the IC and have its own
via to the ground plane to minimize inductance.

Most PC boards for portable applications have thin dielectric
layers and very narrow line width which increase the board
parasitic capacitance and inductance. To minimize these effects
when implementing a matching network, it is recommended to
relieve the ground underneath pads carrying RF signals
whenever possible.

Control Line Description

The control lines can be toggled between high and low levels
using CMOS logic circuitry. Control line C1 is used to switch
between CDMA and AMPS IF output. The other two control
lines C2 and C3 set the various CDMA output levels required by
the system.

Table 1. Downconverter Control Lines C1, C2, C3

Receiver State

AMPS Mode

CDMA High Gain

CDMA HG, low lin

CDMA Mid Gain

CDMA Low Gain

C1 = Mixer Mode, C2 = RFA gain select and LNA gain select,
C3 = IFA gain select and LNA mode select.

TQ5132

Data Sheet

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Receiver State

RFA

IFA

AMPS Mode

HG, AMPS Idd

HG, AMPS Output

CDMA High Gain

HG, CDMA Idd

LG, CDMA Output

CDMA HG, low lin

HG, CDMA Idd

HG, CDMA Output

CDMA Mid Gain

Bypass

LG, CDMA Output

CDMA Low Gain

Bypass

HG, CDMA Output

Table 2. Electrical States of RFA and IFA

In the AMPS mode the TQ5132 switches the IF output to the
AMPS pin and turns on the RF amplifier but at lower current
than CDMA mode. Thus the system draws much less current
in AMPS mode.

In the High Gain modes, a cascode amplifier is switched in
before the mixer. Control for this function is made via a DC
signal on the RF input pin 1. The IF amplifier gain can be
stepped as well via a control line at pin 6.

The CDMA Mid Gain Mode provides an intermediate gain step.
The mixer has the RF amplifier turned off and the IF stage at
minimum gain.

In the low gain modes, the RF amplifier is disabled and the input
signal is routed directly to the mixer.

TQ5132

Data Sheet

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Package Pinout

Pin Descriptions

Pin Name

Pin #

Description and Usage

RF IN

RF Input, RF amplifier gain select, Logic Control 2

GND

Ground, paddle

GIC

Off chip tuning for gain/IP3/current

IF OUT

CDMA IF Output

IF OUT

AMPS IF Output

IFA Gain

IF amplifier gain select, Logic Control 3

LO IN

LO Input, mode select (CDMA/AMPS), Logic Control 1

Vdd

LNA Vdd, typical 2.8V

VDD

GND

GIC

Out

AMP's

IF Out

Mode Select/

LO Input

Out

IFA Gain

Select

CDMA

IF Out

Control 2

Control 1

Control 3

TQ5132

Data Sheet

Additional Information

For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint:

Web: www.triquint.com

Tel: (503) 615-9000

Email: info_wireless@tqs.com

Fax: (503) 615-8900

For technical questions and additional information on specific applications:

Email: info_wireless@tqs.com

The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of

this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or
licenses to any of the circuits described herein are implied or granted to any third party.

For additional information and latest specifications, see our website: www.triquint.com

Package Type: SOT23-8 Plastic Package

DESIGNATION

DESCRIPTION

METRIC

ENGLISH

NOTE

OVERALL HEIGHT

1.20 +/-.25 mm

0.05 +/-.250 in

STANDOFF

.100 +/-.05 mm

.004 +/-.002 in

LEAD WIDTH

.365 mm TYP

.014 in

LEAD THICKNESS

.127 mm TYP

.005 in

PACKAGE LENGTH

2.90 +/-.10 mm

.114 +/-.004 in

1,3

LEAD PITCH

.65 mm TYP

.026 in

LEAD TIP SPAN

2.80 +/-.20 mm

.110 +/-.008 in

PACKAGE WIDTH

1.60 +/-.10 mm

.063 +/-.004 in

2,3

FOOT LENGTH

.45 +/-.10 mm

.018 +/-.004 in

Theta

FOOT ANGLE

1.5 +/-1.5 DEG

Notes
1. The package length dimension includes allowance for mold mismatch and flashing.
2. The package width dimension includes allowance for mold mismatch and flashing.
3. Primary dimensions are in metric millimeters. The English equivalents are calculated and subject to rounding error.

FUSED LEAD

Note 1

PIN 1

Note 2

DIE

Электронный компонент: TQ5132