Advance Product Information
WIRELESS COMMUNICATIONS DIVISION
Preliminary:
Subject to change without notice
TQS Wireless Communications
(503) 615-9000
2300 NE Brookwood Parkway
FAX:(503) 615-8900
Hillsboro, OR 97124
05/17/01 REV. 4
3V HBT TDMA Power Amplifier IC
TQ7625
Selected Electrical Characteristics
Test Conditions: V
CC
= +3.5 V, T
C
= 25
C, V
BIAS
=2.75V
Parameter
Min.
Typ.
Max.
Units
Usable Frequency Range
1850
1910
MHz
TDMA Output Power
28
dBm
TDMA Power Added Efficiency
40
%
ACP, Pout = +28 dBm
-30
dBc
ALT, Pout = +28 dBm
-53
dBc
Large Signal Gain
27.5
dB
Small Signal Gain (Vmode=low)
26
dB
Receive Band Noise
-92
dBm/30KHz
Quiescent Current,
uses V
mode
Switching
Vmode= low
Vmode= high
60
80
mA
mA
V
mode
, Externally
Switched.
P
OUT
<=+15dBm
P
OUT
=+28dBm
0
2.65
0
2.75
0.3
2.85
V
V
Second Harmonic, P
OUT
=+28dBm
-45
dBc
Third Harmonic, P
OUT
=+28dBm
-55
dBc
Application Circuit, US PCS Band
Primary Application(s)
IS-136 Mobile Phones
Dual Band Mobile phones
Key Features
High
Efficiency
Low Quiescent Current,
Mode Selectable
Small size 3x3 mm leadless package
Few external components
Excellent ACP Performance
Single +2.7V Supply
Package: 3x3 mm
Leadless 16 pin
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
3.0 mm
3.
0 mm
50 OhmLine
RF Input
V
CC 2
RF Output
50 Ohm
V
CC 1
V
mode
V
REG
TQ7625
GND
GND
V
RF
IN
RF
OUT
V
RF
OUT
RF
OUT
RF
OUT
V
bias
REG
GND GND
GND
V
CC1
bias
V
mode
GND
Bypass
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