Production Process
TQHBT3
InGaP HBT Foundry Service
Features
2 and 3-um emitter widths
>22 dB MAG @ 6 GHz; with 3-um
emitters
Amplifier Ruggedness: VSWR 70:1
@ 5 V supply
High Linearity in PA applications
InGaP Emitter Process for High Re-
liability and Thermal Stability
Base Etch Stop for Uniformity
MOCVD Epitaxy
High Density Interconnects;
2 Global, 1 Local
Over 6 m Total Thickness
Dielectric Encapsulated Metals
Thick Metal Interconnects:
Enhanced Thermal Management
Minimum Die Size
Effective Base Ballasting for Maxi-
mum Gain
150 mm Wafers
High-Q Passives
NiCr Thin Film Resistors
High Value Capacitors & Stacked
Capacitors
Backside Vias Optional
Validated Models and Design
Support
Applications
Power Amplifiers
Driver Amplifiers
Wideband, General Purpose
Amplifiers
General Description
TriQuint's new TQHBT3 process is a highly reliable InGaP
HBT process with three levels of interconnecting metal and
state-of-the-art device performance. Thick metal intercon-
nects and high quality passives promote integration. The thick
metal interconnects, which promote enhanced thermal man-
agement, and high density capacitors keep die sizes small.
MOCVD epitaxial processes are utilized to grow the active
layers. A carbon-doped Base and InGaP Emitter are utilized
for high RF performance consistent with high reliability. De-
signs utilizing the 3-um emitter width have the performance of
previous 2-um emitters, but with the reliability and ruggedness
associated with wider emitters. Precision NiCr resistors and
high value MIM capacitors are included. The three metal layers
are encapsulated in a high performance dielectric that allows
wiring flexibility and plastic packaging simplicity.
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 1 of 6; Rev 1.1 2/8/2005
TQHBT3 Process Cross-Section
Dielectric
Metal 2 - 4um
Dielectric
MIM
NiCr
Metal 0
C
C
B
B
E
Emitter
Base
Collector
Sub Collector
Buffer & Substrate
Isolation Implant
Metal 1 - 2um
Metal 1 - 2um
Dielectric
Metal 2 - 4um
Dielectric
MIM
NiCr
Metal 0
C
C
B
B
E
Emitter
Base
Collector
Sub Collector
Buffer & Substrate
Isolation Implant
Metal 1 - 2um
Metal 1 - 2um
Dielectric
Metal 2 - 4um
Dielectric
MIM
NiCr
Metal 0
C
C
B
B
E
Emitter
Base
Collector
Sub Collector
Buffer & Substrate
Isolation Implant
Metal 1 - 2um
Metal 1 - 2um
Dielectric
Metal 2 - 4um
Dielectric
MIM
NiCr
Metal 0
C
C
B
B
E
Emitter
Base
Collector
Sub Collector
Buffer & Substrate
Isolation Implant
Metal 1 - 2um
Metal 1 - 2um
Production Process
TQHBT3
InGaP HBT Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 2 of 6; Rev 1.1 2/8/2005
TQHBT3 Process Details
Element
Parameter
Value
Units
HBT Transistor
Emitter Periphery
(Standard Cell)
3 x 3 x 30
m
Vbe
1.15
V
Beta
130
Ft
40
GHz
Fmax
65
GHz
BVcbo
24
V
BVbeo
7
V
BVceo
14
V
Interconnect
Metal Layers
3
MIM Caps (Top
Stacked Cap)
Value
1200
pF/mm2
Inductors
Q @ 2 GHz
>20
Resistors
NiCr
50
Ohms/sq
Bulk
350
Ohms/sq
Vias
Yes
Mask Layers
No Vias
14
With Vias
16
2um emitters are also available!
Bottom Stacked Cap
Value
625
pF/mm2
TQHBT3
Process
Details
HBT Storage Temperature Range
-65 to +150
Deg C
HBT Operating Junction Temperature Range
-55 to +150
Deg C
Junction Current Denstity
20
kA/cm^2
20
V
MIM Capacitor
Maximum
Ratings
Production Process
TQHBT3
InGaP HBT Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 3 of 6; Rev 1.1 2/8/2005
TQHBT3
DC I--V Plot
Ft, Fmax vs Ic
@Vce=3.5V
0
2
4
6
8
Vce (V)
0
0.02
0.04
0.06
0.08
0.1
Ic
(
A
)
Device size: 3X3X30
Ib=0.7uA to Ib=600uA,
step size=67uA
0
10
20
30
40
50
60
70
80
0.00E+00
5.00E-02
1.00E-01
1.50E-01
2.00E-01
2.50E-01
3.00E-01
Ic (mA/um^2)
Fr
equency (
G
Hz)
Ft
Fmax
Production Process
TQHBT3
InGaP HBT Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 4 of 6; Rev 1.1 2/8/2005
Gain at 6.1 GHz
Versus
Current Density
Gummel Plot of
TQHBT3
5
7
9
11
13
15
17
19
21
23
25
0
10
20
30
40
50
Ic (kA/cm2)
G
a
in (
d
B)
3x3x30
3x3x45
1
1.1
1.2
1.3
1.4
Vbe(V)
1E-007
1E-006
1E-005
0.0001
0.001
0.01
0.1
Ic
(
A
)
Gummel Plot (Ic vs Vbe)
Device size:3X3X30
Production Process
TQHBT3
InGaP HBT Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 5 of 6; Rev 1.1 2/8/2005
CW
@ 1.9 GHz
-20
-15
-10
-5
0
5
-5
0
5
10
15
20
25
Gain(
dB
), P
o
ut(
d
Bm
)
0
20
40
60
80
Pout(dBm)
Gain (dB)
-20
-15
-10
-5
0
5
Pin (dBm)
P
A
E
(
%
)
PAE(%)
Gain, Pout, PAE vs Pin
Device size: 3X3X30
Freq=1.9GHz
Vce=3.4V, Ic=3.3mA
Load Gamma @ 1.9GHz = 0.43<24.7
Source Gamma @ 1.9GHz = 0.62<164.7
Load Gamma @ 3.8GHz = 0.59<-171.6
Source Gamma @ 3.8GHz = 0.71<17.1
Production Process
TQHBT3
InGaP HBT Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 6 of 6; Rev 1.1 2/8/2005
Applications Support Services
Tiling of GDSII Stream Files including PCM
Design Rule Check Services
Layout versus Schematic Check Services
Packaging Development Engineering
Test Development Engineering:
On-Wafer
Packaged Parts
Thermal Analysis Engineering
Yield Enhancement Engineering
Part Qualification Services
Failure Analysis
Manufacturing Services
Mask Making
150 mm Wafer Fab
Wafer Thinning
Wafer Sawing
Substrate Vias
DC Die Sort Testing
RF On-Wafer Testing
Plastic Packaging
RF Packaged Part Testing
Please contact your local TriQuint Semiconductor Representative/ Distributor
or Foundry Services Division Marketing for Additional information:
E-mail: sales@triquint.com
Phone: (503) 615-9331
Fax: (503) 615-8905
Design Tool Status
Design Manual
Device Library of Circuit Elements: Transistors, Diodes,
Thin Film Resistors, Capacitors, Inductors
Parameters for 2nd-generation, TriQuint-Modified Gummel-
Poon Model Available Now
Agilent ADS & AWR MWO
Process Variation Models available now
Layout Files Available for:
ICED & Cadence
Layout Rule Sets for Design Rule & Layout versus Schematic
Check Available:
ICED & Cadence
Qualified Package Models for Supported Package Styles
Prototyping and Development
Prototype Development QuickTurn (PDQ):
Shared Mask Set;
Run Monthly
Hot Lot Cycle Time
Via and Non-Via Options
Prototype Wafer Option (PWO):
Customer-specific Masks, Customer Schedule
2 wafers delivered
With thinning and sawing; optional backside vias
Process Qualification Status
Process based on TQHBT2.5 production process.
Full wafer level, process and packaged part qualification
complete for TQHBT3. Contact TriQuint for relevant
reports.
For more information on Quality & Reliability, contact
TriQuint or visit:
www.triquint.com/manufacturing/QR/
Training
GaAs Design Classes:
Half Day Introduction; Upon Request
Four Day Technical Training; Fall & Spring at
TriQuint Oregon facility
For Training & PDQ Schedules please visit:
www.triquint.com/foundry/
PDF 
ZIP