Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)
1
All specifications subject to change without notice
TQM 7M4004
(Preliminary data sheet)
Description:
Advanced dual-band, compact 3V power amplifier module
designed for mobile handset applications. The small size
and high performance is achieved with high-reliability
InGaP HBT technology. The module is fully integrated,
providing a simple 50 Ohms interface on all input and
output ports. No external matching or bias components are
required. Despite its very compact size, the module has
exceptional efficiency in both bands. Band select and
power control inputs on the module are CMOS compatible.
Features:
Very compact size 8
8
1.4 mm
3
.
High efficiency typical E-GSM 55%, DCS
50%.
Positive supply voltage 3.2 to 4.8 V.
50
input and output impedances.
GPRS class 12 compatible.
CMOS band select and power control inputs.
High-reliability InGaP technology.
Ruggedness 10:1.
Few external components.
Description:
The module is a built around a highly integrated dual
power amplifier InGaP die. By virtue of advanced design
techniques, exceptional performance is achieved with only
two stages in each amplifier. On-die interstage matching is
employed using a high Q passives technology. Together
these technologies allow an extremely compact size to be
achieved with excellent electrical performance. The
module includes a CMOS die to implement a band-select
function and to provide a CMOS compatible input power
control voltage range. The module construction is a low-
profile overmolded land-grid array on laminate.
Package Outline:
Dimensions in mm
3V Dual-Band E-GSM/DCS Power Amplifier Module
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)
2
All specifications subject to change without notice
Absolute Maximum Ratings:
Note: The amplifier will survive over the full range specified for any individual input, while
other parameters are nominal and with no RF input.
Operating Parameters:
Typical Performance:
Parameter
Symbol
Min.
Max.
Units
Supply voltage
V
cc
-0.5
6.0
V
dc
DC supply current
I
cc
2.4
A
Power control voltage
V
apc
-0.5
2.0
V
Duty cycle at max. power
50
%
Operating case temperature
T
a
-20
85
C
Storage temperature
T
s
-55
150
C
Parameter
Symbol
Min.
Typ.
Max.
Units
Supply voltage
V
cc
3.2
3.6
4.8
V
dc
DC supply current
I
cc
1.6
A
Leakage current
I
l
1
20
A
Load impedances
Z
0
50
DCS Characteristics as a function of V
apc
-40.00
-30.00
-20.00
-10.00
0.00
10.00
20.00
30.00
40.00
0.50
1.00
1.50
2.00
V
apc
P
o
u
t
(
d
B
m
)
&
G
a
i
n
(
d
B
)
0.00
10.00
20.00
30.00
40.00
50.00
60.00
P
o
w
e
r
A
d
d
e
d
E
f
f
i
c
i
e
n
c
y
(
%
)
Gain
P
out
PAE
E-GSM Characteristics as a function of V
apc
-40
-30
-20
-10
0
10
20
30
40
0.50
1.00
1.50
2.00
V
apc
P
o
u
t
(
d
B
m
)
&
G
a
i
n
(
d
B
)
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
P
o
w
e
r
A
d
d
e
d
E
f
f
i
c
i
e
n
c
y
(
%
)
Gain
P
out
PAE
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)
3
All specifications subject to change without notice
E-GSM Electrical Characteristics:
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Frequency Range
f
880
915
MHz
Input Power for P
out
max.
P
in
2.0
4.0
6.0
dBm
34.5
35.0
dBm
Power Added Efficiency
50
55
%
Power Control Voltage
V
apc
0.2
1.8
V
Power Control Current
I
apc
0.1
mA
Power Control Slope
P
out
/V
apc
200
dB/V
0
P
out
34.5 dBm
Power Control Dynamic
Range
70
dB
Input VSWR
2.0:1
-3
P
out
34.5 dBm
Forward Isolation
Iso
-35.0
dBm
V
apc
0.2 V, P
in
= - 5 dBm
Cross-band Isolation
Iso
-16.0
dBm
P
out
35.0 dBm
2f
0
-7.0
3f
0
-7.0
> 3f
0
-7.0
Rx noise power:
925 - 935 MHz
-72.0
dBm
P
out
34.5 dBm, RBW = 100 kHz
Rx noise power:
935 - 960 MHz
-84.0
dBm
P
out
34.5 dBm, RBW = 100 kHz
Stability
8:1
All phase angles,
V
apc
1.8 V
P
in
= 4 dBm, P
out
35.0 dBm
Ruggedness
10:1
All phase angles,
V
apc
1.8 V
P
in
= 4 dBm, P
out
35.0 dBm
Test conditions (unless noted): V
cc
= +3.6 V, V
apc
= 1.8 V, P
in
= 4 dBm, Duty Cycle =25%, Ta = 25C
P
out
34.5 dBm
dBm
Output Power
P
out
Harmonics
dBm
33.0
34.0
V
cc
= 3.2 V
Temp:
-20C to
+85C
Temp:
-20C to
+85C
Temp:
-20C to
+85C
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)
4
All specifications subject to change without notice
DCS Electrical Characteristics:
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Frequency Range
f
1710
1785
MHz
Input Power for P
out
max.
P
in
2.0
4.0
6.0
dBm
32.0
32.5
dBm
Power Added Efficiency
45
50
%
Power Control Voltage
V
apc
0.2
1.8
V
Power Control Current
I
apc
0.1
mA
Power Control Slope
P
out
/V
apc
200
dB/V
0
P
out
32.5 dBm
Power Control Dynamic
Range
70
dB
Input VSWR
3.0:1
-3
P
out
32 dBm
Forward Isolation
Iso
-32.0
dBm
V
apc
0.2 V, P
in
= - 5dBm
2f
0
-7.0
3f
0
-7.0
> 3f
0
-7.0
Rx noise power:
1805 - 1880 MHz
-76.0
dBm
P
out
32 dBm, RBW = 100 kHz
Stability
8:1
All phase angles,
V
apc
1.8 V
P
in
= 4 dBm, Pout
32.5 dBm
Ruggedness
10:1
All phase angles,
V
apc
1.8 V
P
in
= 4 dBm, P
out
32.5 dBm
Test conditions (unless noted): V
cc
= +3.6 V, V
apc
= 1.8 V, P
in
= 4 dBm, Duty Cycle = 25%, T
a
= 25C
Output Power
P
out
30.5
31.0
dBm
V
cc
= 3.2 V
Harmonics
dBm
P
out
32 dBm
Temp:
-20C to
+85C
Temp:
-20C to
+85C
Temp:
-20C to
+85C
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)
5
All specifications subject to change without notice
Pin Out:
Top view
Pin
Symbol
Description
1
RFin - DCS
DCS power in
2
Gnd.
Ground
3
V
apc
Control voltage
4
Gnd.
Ground
5
Gnd.
Ground
6
V
bs
Band select voltage
7
Gnd.
Ground
8
RF
in
- E-GSM
E-GSM power in
9
Gnd.
Ground
10
V
cc
1 - E-GSM
E-GSM 1st stage input
voltage
11
V
cc
2 - E-GSM
E-GSM 2nd stage input
voltage
12
Gnd.
Ground
13
RF
out
- E-GSM
E-GSM power out
14
Gnd.
Ground
15
Gnd.
Ground
16
Gnd.
Ground
17
Gnd.
Ground
18
Gnd.
Ground
19
Gnd.
Ground
20
RF
out
- DCS
DCS power out
21
Gnd.
22
V
cc
2 - DCS
DCS 2nd stage input
voltage
23
V
cc
1 - DCS
DCS 1st stage input
voltage
24
Gnd.
Ground
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030206)
6
All specifications subject to change without notice
Schematic:
PDF 
ZIP