TQM7M4006
Advance Data Sheet
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Advance Data Sheet: Subject to change without notice
For additional information and latest specifications, see our website: { HYPERLINK "http://www.triquint.com" }
Revision A, June 1, 2004
{PAGE }
Functional Block Diagram
Product Description
The TQM7M4006 is an advanced, quad-band, ultra-compact, 3V power amplifier
module designed for mobile handset applications. The module sets new standards
in performance and size by employing the latest technologies in power amplifier
design. High-reliability is assured by InGaP HBT technology in combination with
new CuFlipTM assembly technology. This fully integrated module, in a minimal
form factor, provides a simple 50
interface on all input and output ports. It
includes internal closed-loop power control with wide dynamic range, and on-
board reference voltage. No external matching or bias components are required.
Despite its very compact size, the module has exceptional efficiency in all bands.
Incorporates two highly-integrated InGaP power amplifier die with a CMOS
controller. All die are CuFlipTM mounted to minimize thermal excursions. Each
amplifier has three gain stages with interstage matching implemented with a high
Q passives technology for optimal performance. The CMOS controller implements
a fully integrated closed-loop power control within the module, eliminating the
need for external detection to assure the output power level. The latter is set
directly from the V
ramp
input from the DAC. The module has Tx enable and band
select inputs and a highly-stable on-board reference voltage. Excellent
performance is achieved across the 824 849 MHz, 880 915 MHz, 1710 1785
MHz, and 1850 1910 MHz bands. Module construction is a low-profile
overmolded land-grid array on laminate.
Electrical Specifications
Parameter
850 Band
900 Band
DCS/PCS
Units
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
GSM Pout
Efficiency
Pin
34.5
47
2
35
52
5
8
34.5
52
2
35
57
5
8
32
46
2
32.5
51
5
8
dBm
%
dBm
Features
Very compact size 5
51.1 mm
3
.
Positive supply voltage 2.9 to 4.5 V.
High efficiency typical GSM850 50%,
GSM900 55%, DCS 50%, PCS 50%.
CMOS internal closed-loop power control.
55 dB dynamic control range.
GPRS class 12 compatible.
High-reliability InGaP technology.
Ruggedness 10:1.
50
input and output impedances.
Few external components
Applications
GSM handsets
GSM wireless cards and data links
Package Style
Package Size : 5 x 5 x 1.1 mm
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