Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818)
1
All specifications subject to change without notice
TQM 7M4009
(Preliminary data sheet)
Description:
Advanced quad-band, compact 3V power amplifier module
designed for mobile handset applications. The small size and
high performance is achieved with high-reliability InGaP HBT
technology and advanced assembly techniques. The module
is fully integrated, providing a simple 50 Ohms interface on all
input and output ports. Despite its very compact size, the
module has exceptional efficiency in all bands. Band select
and power control inputs on the module are fully CMOS
compatible
Features:
-- Extremely compact size 6x6x1.4 mm
3
.
-- Band select, and single V
apc
CMOS compatible
power control input.
-- High efficiency typical GSM850 47%,
GSM900 55%, DCS/PCS 50%.
-- GPRS class 12.
-- +2 dBm min. input.
-- 50
?
input and output impedances.
-- High-reliability InGaP technology.
-- Few external components.
Description:
The module is built around a highly integrated dual power
amplifier InGaP die. By virtue of advanced design techniques,
exceptional performance is achieved with only two stages in
each amplifier. On-die interstage matching is employed using
a high Q passives technology. Together these technologies
allow an extremely compact size to be achieved with excellent
electrical performance. The module includes a CMOS die to
implement a band-select function and to provide a CMOS
compatible input power control voltage range. The module has
a band select input. Excellent performance is achieved across
the 824 849 MHz, 880 915 MHz, 1710 1785 MHz, and
1850 1910 MHz bands. Module construction is a low-profile
overmolded land-grid array on laminate.
Package Outline:
13
12
11
10
9
8
7
6
5
4
3
2
1
20
19
18
17
16
15
14
TQS
7M4009
USA
C352
A213505
2.85 2.85
.25
.75
Gnd.
Gnd.
Gnd.
Gnd.
Gnd.
DCS-in
G
n
d
.
G
n
d
.
G
n
d
.
G
n
d
.
D
C
S
-
V
c
c
1
D
C
S
-
V
c
c
2
DCS-out
GSM-in
G
S
M
-
V
c
c
1
G
S
M
-
V
c
c
2
GSM-out
Vapc
Vbs
Gnd.
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
Dimensions in mm
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818)
2
All specifications subject to change without notice
Absolute Maximum Ratings:
Note: The amplifier will survive over the full range specified for any individual input, while
other parameters are nominal and with no RF input.
Operating Parameters:
Typical Performance:
Parameter
Symbol
Min.
Max.
Units
Supply voltage
V
bat
-0.5
6.0
V
dc
DC supply current
I
bat
2.4
A
Power control voltage
V
ramp
-0.5
3.0
V
Duty cycle at max. power
?
50
%
Output load
VSWR
10:1
Operating case temperature
T
c
-30
100
C
Storage temperature
T
s
-55
150
C
Input power
P
in
15
dBm
Parameter
Symbol
Min.
Typ.
Max.
Units
Supply voltage
V
bat
2.9
3.5
4.5
V
dc
Supply current
I
bat
1.6
A
Band select voltage GSM
V
bs
-L
0.0
0.5
V
DCS/PCS
V
bs
-H
2.0
3.0
Leakage current
Tx
en
Low, Vramp = 0.19V
I
l
1
20
?
A
Load impedances
Z
0
50
?
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818)
3
All specifications subject to change without notice
GSM850 Electrical Characteristics:
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Frequency Range
f
824
849
MHz
Input Power for P
out
max.
P
in
2.0
4.0
6.0
dBm
Output Power
P
out
33.0
34.5
dBm
31.0
32.6
V
bat
= 2.9 V
Power Added Efficiency
?
40
47
%
P
out
= P
out
max.
Power Control Voltage
V
apc
0.2
1.8
V
Power Control Current
I
apc
0.1
mA
80
dB/V
7.5 < P
out
?
35.5
150
-10 < P
out
?
7.5
200
-34.5 < P
out
?
-10
Input VSWR
3.0:1
-3
?
P
out
?
34.5 dBm
Forward Isolation
Iso
-35.0
dBm
V
apc
?
0.2 V, P
in
= -5 dBm
2f
0
-7.0
Pout
?
34.5 dBm
3f
0
-7.0
> 3f
0
-7.0
Rx noise power:
925 - 935 MHz
-74.0
dBm
RBW = 100 kHz
935 - 960 MHz
-82.0
P
out
?
34.5 dBm
Stability
8:1
All phase angles
V
apc
?
1.8 V
P
in
= 4 dBm, P
out
?
34.5 dBm
Ruggedness
10:1
All phase angles
V
apc
?
1.8 V
P
in
= 4 dBm, P
out
?
34.5 dBm
dBm
Harmonics
Test conditions (unless noted): V
bat
= +3.5 V, V
apc
= 1.8 V, P
in
= 4 dBm, Duty Cycle =25%, T
c
= 25C
Power Control Slope
P
out
/V
apc
T
C
min
?
T
C
?
?
T
C
max
T
C
min
?
T
C
???
T
C
max
T
C
min
?
T
C
?
?
T
C
max
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818)
4
All specifications subject to change without notice
GSM900 Electrical Characteristics:
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Frequency Range
f
880
915
MHz
Input Power for P
out
max.
P
in
2.0
4.0
6.0
dBm
Output Power
P
out
34.5
35.0
dBm
32.0
33.5
V
bat
= 2.9 V
Power Added Efficiency
?
50
55
%
P
out
= P
out
max.
Power Control Voltage
V
apc
0.2
1.8
V
Power Control Current
I
apc
0.1
mA
80
dB/V
7.5 < P
out
?
35.5
150
-10 < P
out
?
7.5
200
-34.5 < P
out
?
-10
Input VSWR
2.5:1
-3
?
P
out
?
34.5 dBm
Forward Isolation
Iso
-35.0
dBm
V
apc
?
0.2 V, P
in
= -5 dBm
Cross-band Isolation
Iso
-13.0
dBm
P
out
?
34.5 dBm
2f
0
-7.0
Pout
?
34.5 dBm
3f
0
-7.0
> 3f
0
-7.0
Rx noise power:
925 - 935 MHz
-74.0
dBm
RBW = 100 kHz
935 - 960 MHz
-82.0
P
out
?
34.5 dBm
Stability
8:1
All phase angles
V
apc
?
1.8 V
P
in
= 4 dBm, P
out
?
34.5 dBm
Ruggedness
10:1
All phase angles
V
apc
?
1.8 V
P
in
= 4 dBm, P
out
?
34.5 dBm
dBm
Harmonics
Test conditions (unless noted): V
bat
= +3.5 V, V
apc
= 1.8 V, P
in
= 4 dBm, Duty Cycle =25%, T
c
= 25C
Power Control Slope
P
out
/V
apc
T
C
min
?
T
C
?
?
T
C
max
T
C
min
?
T
C
???
T
C
max
T
C
min
?
T
C
?
?
T
C
max
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818)
5
All specifications subject to change without notice
DCS1800/PCS1900 Electrical Characteristics:
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Frequency Range
f
1710
1850
1785
1910
MHz
Input Power for P
out
max.
P
in
2.0
4.0
6.0
dBm
Output Power
32.0
32.5
29.5
31.0
V
bat
= 2.9 V
Power Added Efficiency
?
45
50
%
P
out
= P
out
max.
Power Control Voltage
V
apc
0.2
1.8
V
Power Control Current
I
apc
0.1
mA
80.0
7.5 < P
out
?
32.5
150.0
-10 < P
out
?
7.5
200.0
-34.5 < P
out
?
-10
Input VSWR
3.0:1
-3
?
P
out
?
32.5 dBm
Forward Isolation
Iso
-35
dBm
V
apc
?
0.2 V, P
??
= -5 dBm
2f
0
-7.0
P
out
?
32.5 dBm
3f
0
-7.0
> 3f
0
-7.0
Rx noise power
1805 - 1880 MHz
-76.0
dBm
RBW = 100 kHz
P
out
?
32.5 dBm
Stability
8:1
All phase angles
V
apc
?
1.8 V
P
in
= 4 dBm, P
out
?
34.5 dBm
Ruggedness
10:1
All phase angles
V
apc
?
1.8 V
P
in
= 4 dBm, P
out
?
34.5 dBm
Harmonics
dBm
Test conditions (unless noted): V
bat
= +3.5 V, V
apc
= 1.8 V, P
in
= 4 dBm, Duty Cycle = 25%, T
c
= 25C
P
out
dBm
Power Control Slope
P
out
/V
apc
dB/V
T
C
min
?
T
C
??
T
C
max
T
C
min
?
T
C
?
?
T
C
max
T
C
min
?
T
C
?
?
T
C
max
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818)
6
All specifications subject to change without notice
Pin Out:
Top view
13
12
11
10
9
8
7
6
5
4
3
2
1
20 19 18 17
16
15
14
Gnd.
Gnd.
Gnd.
Gnd.
Gnd.
DCS/PCS-in
G
n
d
.
G
n
d
.
G
n
d
.
G
n
d
.
D
C
S
/
P
C
S
-
V
c
c
1
D
C
S
/
P
C
S
-
V
c
c
2
DCS/PCS-out
Cell/GSM-in
C
e
l
l
/
G
S
M
-
V
c
c
1
C
e
l
l
/
G
S
M
-
V
c
c
2
Cell/GSM-out
Vapc
Vbs
Gnd.
Pin
Symbol
Description
1
RFin - DCS/PCS DCS/PCS power in
2
Gnd.
3
V
apc
Control voltage
4
V
bs
Band select voltage
5
Gnd.
6
RFin - GSM
GSM power in
7
Gnd.
8
V
cc
1 - GSM
GSM stage 1 input voltage
9
V
cc
2 - GSM
GSM stage 2 input voltage
10
Gnd.
11
RF
out
- GSM
GSM power out
12
Gnd.
13
Gnd.
14
Gnd.
15
Gnd.
16
RF
out
- DCS/PCS DCS/PCS power out
17
Gnd.
18
V
cc
2 - DCS/PCS DCS/PCS stage 2 input
voltage
19
Gnd.
20
V
cc
1 - DCS/PCS DCS/PCS stage 1 input
voltage
Copyright 2003 TriQuint Semiconductor Inc., All rights reserved (rev. 030818)
7
All specifications subject to change without notice
Schematic:
Vcc1
Vcc2
Interstage
Match
ESD
Input
Match
Output
Match
Interstage
Match
Input
Match
Output
Match
Vapc
Pin DCS/PCS
Pin Cell/GSM
Pout DCS/PCS
Pout Cell/GSM
ESD
Vcc1
Vcc2
Vbs
Vapc and Band
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