Released Process
TQTRx
GaAs MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 1 of 7; Rev 1.0 11/15/01
TQTRx Process Cross-Section
Production Process
TQTRp
Advanced Passives & MESFET Foundry Service
Features
High Density Interconnects:
3 Global
1 Local
9 m Total Thickness
High-Q Passives; >50 @ 2 GHz
0.6 m Gate Length MESFET Op-
tional: Power & General Purpose
D-FETs; E-FET
Schottky-Barrier Diodes
Bulk & Thin Film Resistors
High Value Capacitors
Dielectric Encapsulated Metals
Planarized Surface; simplified
plastic packaging
Substrate Vias Available
Volume Production Processes
Low Cost Passives-Only Option
Applications
Active and/or Passive
Components
Circuits Requiring High Q Passive
Elements
Ideal for Mixers, Converters, and
Phase-Shifters with Baluns, Trans-
formers, E-M Structures
Mobile Phone Front End Blocks
RF Module Front-Ends
General Description
TriQuint's TQTRp process has advanced metal systems and
MESFET devices. It is targeted at high performance, small size
passive-only or passive/active circuits and utilizes over 9 m of
gold metal. High density interconnections are accomplished
with three thick global and one surface metal interconnect lay-
ers. The four metal layers are encapsulated in a high perform-
ance dielectric that allows wiring flexibility and plastic packag-
ing simplicity. Precision NiCr resistors, implanted resistors,
and high value MIM capacitors are included. Advanced 0.6 m
enhancement/depletion mode MESFET devices include an inte-
grated power MESFET, general purpose D-Mode MESFET, and
Enhancement Mode MESFET and are based on the TQTRx
process, currently TriQuint's highest volume process. The
TQTRp process is available on 150-mm (6 inch) wafers.
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 1 of 6; Rev 2.1 8/10/02
TQTRp Process Cross-Section
E,D,G MESFET
NiCr Resistor
MIM Capacitor
Isolation Implant
Semi-Insulating GaAs Substrate
MIM Metal
N+
Metal 0
Metal 1
Metal 1
Metal 1 - 2 um
N+
Passivation Via
Metal 2
Metal 3
Dielectric
Dielectric
Metal 3 - 5 um
Metal 2 - 2 um
Dielectric
N-/P- Channel
NiCr
E,D,G MESFET
NiCr Resistor
MIM Capacitor
Isolation Implant
Semi-Insulating GaAs Substrate
MIM Metal
N+
Metal 0
Metal 1
Metal 1
Metal 1 - 2 um
N+
Passivation Via
Metal 2
Metal 3
Dielectric
Dielectric
Metal 3 - 5 um
Metal 2 - 2 um
E,D,G MESFET
NiCr Resistor
MIM Capacitor
Isolation Implant
Semi-Insulating GaAs Substrate
MIM Metal
N+
Metal 0
Metal 1
Metal 1
Metal 1 - 2 um
N+
Passivation Via
Metal 2
Metal 3
Dielectric
Dielectric
Metal 3 - 5 um
Metal 2 - 2 um
Dielectric
N-/P- Channel
NiCr
Released Process
TQTRx
MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 2 of 7; Rev 1.0 11/15/01
Specifications Subject to Change
FET Operating Channel Temp
-55 to +150
C
Capacitor Breakdown Voltage - Design
10
V
- Typical
20
V
Maximum
Ratings
Production Process
TQTRp
Advanced Passives & MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 2 of 6; Rev 2.1 8/10/02
Element
Parameter
Value
Units
Interconnects
Metal Layers
Four: 0.5,2,2,5
um
MIM Caps
Values
1200
pF/mm2
Resistors
NiCr
50
Ohms/sq
Bulk
700
Ohms/sq
Gate Length
(All FETs)
0.6
um
E-FET;
Threshold Voltage
+0.15
Vth--V
Imax
90
mA/mm
Ft @ Idss
18
GHz
Gm
225
mS/mm
Breakdown, Vgd
22
V
Fmin, 6 GHz
0.90
dB
D-FET
Pinchoff Voltage
-0.6
Vp--V
Idss
70
mA/mm
Gm
200
mS/mm
Breakdown, Vgd
18.5
V
Fmin, 6 GHz
0.54
dB
G-FET
Pinchoff Voltage
-2.2
Vp--V
Idss
270
mA/mm
Imax
365
mA/mm
Gm
170
mS/mm
Breakdown, Vgd
19
V
Vias
Yes
Mask Layers
No Vias
18
With Vias
20
N+ Diode
Vforward
0.55
V
TQTRp
Process
Details
Production Process
TQTRp
Advanced Passives & MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 3 of 6; Rev 2.1 8/10/02
Freq (0.1GHz to 26.1GHz)
S12 / .05
-6
-4
-2
0
2
4
6
S21
S11
S22
EFET
300 um
Vds=3V
50% Idmax
Freq (0.1GHz to 26.1GHz)
S12 / .05
-4
-3
-2
-1
0
1
2
3
4
S21
S11
S22
DFET
300 um
Vds=3V
50% Idss
Freq (0.1GHz to 26.1GHz)
S12 / .05
-4
-3
-2
-1
0
1
2
3
4
S21
S11
S22
GFET
300 um
Vds=3V
50% Idss
Production Process
TQTRp
Advanced Passives & MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 4 of 6; Rev 2.1 8/10/02
Gmax vs Vgs vs Frequency
300 um FETs; Three Types
Vds = 1.5 & 3.0 V; T=27C
EFET
Ft vs Vgs
0.00
5.00
10.00
15.00
20.00
0.
20
0.
30
0.
40
0.
50
0.
60
Vgs (V)
Ft
(
G
Hz)
Vds = 1.5V
Vds = 3.0V
DFET
Ft vs Vgs
10.0
13.0
16.0
19.0
22.0
25.0
-0
.4
0
-0
.2
0
0.
00
0.
20
0.
40
Vgs (V)
Ft
(
G
Hz)
Vds = 1.5V
Vds = 3.0V
GFET
Ft vs Vgs
15.0
17.0
19.0
21.0
23.0
25.0
-1
.6
0
-1
.4
0
-1
.2
0
-1
.00
-0
.8
0
-0.6
0
-0
.4
0
-0
.2
0
0.
00
0.
20
Vgs (V)
Ft
(
G
Hz)
Vds = 1.5V
Vds = 3.0V
Ft versus Vgs;
300 um FETs; Three Types;
Vds = 1.5 & 3.0 V; T=27C
DFET
Gmax vs Vgs vs Freq
6.0
10.0
14.0
18.0
22.0
26.0
-0
.4
-0
.2
0.
0
0.
2
0.
4
Vgs (V)
Gm
ax (dB
)
Vds = 1.5V
@ 1.1GHz
Vds = 1.5V
@ 2.2GHz
Vds = 1.5V
@ 5.8GHz
Vds = 1.5V
@ 7.9GHz
Vds = 1.5V
@ 12.1GHz
Vds = 3.0V
@ 1.1GHz
Vds = 3.0V
@ 2.2Ghz
Vds = 3.0V
@ 5.8GHz
Vds = 3.0V
@ 7.9GHz
Vds = 3.0V
@ 12.1GHz
G F ET
G m ax v s V g s vs F req
6 .0
1 0 .0
1 4 .0
1 8 .0
2 2 .0
2 6 .0
-1
.6
-1
.4
-1
.2
-1
.0
-0
.8
-0
.6
-0
.4
-0
.2
0.0
0.2
Vgs (V)
G
m
ax (
d
B
)
V d s = 1.5 V
@ 1.1 GH z
V d s = 1.5 V
@ 2.2 GH z
V d s = 1.5 V
@ 5.8 GH z
V d s = 1.5 V
@ 7.9 GH z
V d s = 1.5 V
@ 12 .1G H z
V d s = 3.0 V
@ 1.1 GH z
V d s = 3.0 V
@ 2.2 GH z
V d s = 3.0 V
@ 5.8 GH z
V d s = 3.0 V
@ 7.9 GH z
V d s = 3.0 V
@ 12 .1G H z
E FE T
Gmax v s Vgs v s Freq.
4.0
8.0
12.0
16.0
20.0
24.0
0.
2
0.
3
0.
4
0.
5
0.6
Vgs (V)
Gm
ax (dB)
Vds = 1.5V
@ 1.1GH z
Vds + 1.5V
@ 2.2GH z
Vds + 1.5V
@ 5.8GH z
Vds = 1.5V
@ 7.9GH z
Vds = 1.5V
@ 12.1GH z
Vds = 3.0V
@ 1.1GH z
Vds = 3.0V
@ 2.2GH z
Vds = 3.0V
@ 5.8GH z
Vds = 3.0V
@ 7.9GH z
Vds = 3.0V
@ 12.1GH z
Production Process
TQTRp
Advanced Passives & MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 5 of 6; Rev 2.1 8/10/02
EFET
IV Curves
300 um
DFET
IV Curves
300 um
GFET
IV Curves
300 um
Production Process
TQTRp
Advanced Passives & MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 6 of 6; Rev 2.1 8/10/02
Applications Support Services
Tiling of GDSII Stream Files including PCM on 15 x 15
mm maximum Tile Size
Design Rule Check Services
Layout versus Schematic Check Services
Engineering Services:
Packaging Development
On-Wafer Test Development
Packaged Parts
Thermal Analysis
Yield Enhancement
Part Qualification Services
Failure Analysis
Manufacturing Services
Mask Making
Production 150 mm Wafer Fab
Wafer Thinning
Wafer Sawing
Substrate Vias
DC Die Sort Testing
RF On-Wafer Testing
Plastic Packaging
RF Packaged Part Testing
Please contact your local TriQuint Semiconductor Representative or
Foundry Services Staff for additional information:
E-mail: sales@triquint.com Phone: (503) 615-9000 Fax: (503) 615-8905
Prototyping and Development
Prototype Development Quickturn (PDQ):
Shared Mask Set;
Run Monthly;
Hot Lot Cycle;
Via and Non-Via Options.
Prototype Wafer Option (PWO):
Customer-specific Masks, Customer Schedule
2 wafers delivered
Hot Lot Cycle Time
With thinning and sawing; optional backside
vias
Design Sensitivity Test (DST) Wafer Run
Yield Analysis
Design Sensitivity to Process Variation
14 Wafer Start; Spread of Vp Values
Process Qualification
Status
TQTRp is a fully released qualified process
Reliability Reports
TQTRp Process Qualification
TQTRx Element Qualification Report (for
FETs)
For more information on Quality and
Reliability, contact TriQuint or visit
www.tqs.com/Manufacturing/QR/bdy_qr-pubs.htm.
Design Tool Status
Design Manual Available Now
Device Library of Circuit Elements: FETs, Diodes, Thin
Film and Implanted Resistors, Capacitors, Inductors
Parameters for "TriQuint's Own Model" (TOM)
Agilent ADS Design Kit Available Now
PSPICE Models Available Q2'02
Cadence Layout Library Available Now
Layout/Verification Kit for ICEditors in Q4'02
Training
GaAs Design Classes:
Half Day Introduction; Upon Request
Four Day Technical Training; Fall & Spring at
TriQuint Oregon facility
For Training Schedules please visit:
www.triquint.com/foundry
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