Production Process
TQTRx
GaAs MESFET Foundry Service
Features
0.6 m Gate Length MESFET
Process
4 Active Devices:
Power & Gain D-FETs
E-FET
Schottky-Barrier Diodes
High Density Interconnects:
2 Global and
1
local
6 m total thickness
High-Q Passives
Bulk & Thin Film Resistors
High Value Capacitors
Dielectric Encapsulated Metals
Planarized Surface; simplified
plastic packaging
Substrate Vias Available
Volume Production Process
Validated Models and Design
Support
Applications
Flexible Process Supports:
Low Supply Voltage Capability
3V PA's, Driver Amps,
Upconverters
LNAs and Downconverters down to
1
V
Integrated Transceivers: LNA + Sw
+ PA, UPC + PA
Fiber-Optic TIA and Laser Diode
Drivers
Mobile Phone Front End Blocks:
Cell Band
PCS Band
GSM Band
WLAN:
ISM
HYPERLAN2
UNII
General Description
TriQuint's TQTRx is an advanced 0.6 m enhancement/
depletion mode MESFET process with an integrated power
MESFET, general purpose D-Mode MESFET and Enhance-
ment Mode MESFET. This process supports RF and mixed
mode applications from RF to microwave frequencies. High
density interconnections are accomplished with two thick
global and one local metal interconnect layers. The three
metal layers are encapsulated in a high performance dielec-
tric that allows wiring flexibility and plastic packaging sim-
plicity. Precision NiCr resistors and high value MIM capaci-
tors are included. The TQTRx process is currently Tri-
Quint's highest volume process and is manufactured on
150-mm (6 inch) wafers.
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 1 of 7; Rev 2.1 8/10/02
Isolation Implant
N-/P- Channel
N+
N+
Metal 0
Metal 1
Metal 1
Metal 1 - 2um
Metal 2
Dielectric
Dielectric
Metal 2 - 4um
Dielectric
MIM Metal
NiCr
E,D,G MESFET
NiCr Resistor
MIM Capacitor
Semi-Insulating GaAs Substrate
Isolation Implant
N-/P- Channel
N+
N+
Metal 0
Metal 1
Metal 1
Metal 1 - 2um
Metal 2
Dielectric
Dielectric
Metal 2 - 4um
Dielectric
Isolation Implant
N-/P- Channel
N+
N+
N-/P- Channel
N+
N+
Metal 0
Metal 1
Metal 1
Metal 1 - 2um
Metal 2
Dielectric
Dielectric
Metal 2 - 4um
Dielectric
MIM Metal
NiCr
E,D,G MESFET
NiCr Resistor
MIM Capacitor
Semi-Insulating GaAs Substrate
TQTRx Process Cross-Section
Production Process
TQTRx
MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 2 of 7; Rev 2.1 8/10/02
Element
Parameter
Value
Units
Gate Length
(All FETs)
0.6
m
E-FET;
Threshold Voltage
+0.15
V
Imax
90
mA/mm
Gm
225
mS/mm
Breakdown, Vgd
22
V
Fmin, 6 GHz
0.90
dB
D-FET
Pinchoff Voltage
-0.6
V
Idss
70
mA/mm
Gm
200
mS/mm
Breakdown, Vgd
18.5
V
Fmin, 6 GHz
0.54
dB
G-FET
Pinchoff Voltage
-2.2
V
Idss
270
mA/mm
Imax
400
mA/mm
Gm
170
mS/mm
Breakdown, Vgd
19
V
Interconnects
3
Metal Layers
N+ Diode
V forward
0.55
V
MIM Caps
Values
1200
pF/mm2
Resistors
NiCr
50
Ohms/Sq
Bulk
700
Ohms/sq
Vias
Yes
Mask Layers
No Vias
16
With Vias
18
Fmin, 6 GHz
0.66
dB
Specifications Subject to Change
TQTRx
Process
Details
FET Operating Channel Temp
-55 to +150
Deg C
Capacitor Breakdown Voltage - Design
10
V
- Typical
20
V
Maximum
Ratings
Production Process
TQTRx
MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 3 of 7; Rev 2.1 8/10/02
Freq (0.1GHz to 26.1GHz)
S12 / .05
-6
-4
-2
0
2
4
6
S21
S11
S22
EFET
300 um
Vds=3V
50% Idmax
Freq (0.1GHz to 26.1GHz)
S12 / .05
-4
-3
-2
-1
0
1
2
3
4
S21
S11
S22
DFET
300 um
Vds=3V
50% Idss
Freq (0.1GHz to 26.1GHz)
S12 / .05
-4
-3
-2
-1
0
1
2
3
4
S21
S11
S22
GFET
300 um
Vds=3V
50% Idss
Production Process
TQTRx
MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 4 of 7; Rev 2.1 8/10/02
Gmax vs Vgs vs Frequency
300 um FETs; Three Types
Vds = 1.5 & 3.0 V; T=27C
EFET
Ft vs Vgs
0.00
5.00
10.00
15.00
20.00
0.
20
0.
30
0.
40
0.
50
0.
60
Vgs (V)
Ft
(
G
H
z
)
Vds = 1.5V
Vds = 3.0V
DFET
Ft vs Vgs
10.0
13.0
16.0
19.0
22.0
25.0
-0
.4
0
-0
.2
0
0.
00
0.
20
0.
40
Vgs (V)
Ft
(
G
H
z
)
Vds = 1.5V
Vds = 3.0V
GFET
Ft vs Vgs
15.0
17.0
19.0
21.0
23.0
25.0
-1
.60
-1
.4
0
-1
.2
0
-1.00 -0
.8
0
-0.60 -0
.4
0
-0
.2
0
0.00 0.
20
Vgs (V)
Ft (GHz)
Vds = 1.5V
Vds = 3.0V
Ft versus Vgs;
300 um FETs; Three Types;
Vds = 1.5 & 3.0 V; T=27C
DFET
Gmax vs Vgs vs Freq
6.0
10.0
14.0
18.0
22.0
26.0
-0.
4
-0.
2
0.
0
0.2
0.
4
Vgs (V)
Gm
ax (
d
B
)
Vds = 1.5V
@ 1.1GHz
Vds = 1.5V
@ 2.2GHz
Vds = 1.5V
@ 5.8GHz
Vds = 1.5V
@ 7.9GHz
Vds = 1.5V
@ 12.1GHz
Vds = 3.0V
@ 1.1GHz
Vds = 3.0V
@ 2.2Ghz
Vds = 3.0V
@ 5.8GHz
Vds = 3.0V
@ 7.9GHz
Vds = 3.0V
@ 12.1GHz
GFET
Gmax vs Vgs vs Freq
6.0
10.0
14.0
18.0
22.0
26.0
-1.
6
-1.
4
-1.
2
-1.
0
-0.
8
-0.
6
-0.
4
-0.
2
0.
0
0.
2
Vgs (V)
G
m
ax (d
B
)
Vds = 1.5V
@ 1.1GHz
Vds = 1.5V
@ 2.2GHz
Vds = 1.5V
@ 5.8GHz
Vds = 1.5V
@ 7.9GHz
Vds = 1.5V
@ 12.1GHz
Vds = 3.0V
@ 1.1GHz
Vds = 3.0V
@ 2.2GHz
Vds = 3.0V
@ 5.8GHz
Vds = 3.0V
@ 7.9GHz
Vds = 3.0V
@ 12.1GHz
EFET
Gmax vs Vgs vs Freq.
4.0
8.0
12.0
16.0
20.0
24.0
0.
2
0.3
0.
4
0.
5
0.
6
Vgs (V)
G
m
ax (
d
B)
Vds = 1.5V
@ 1.1GHz
Vds + 1.5V
@ 2.2GHz
Vds + 1.5V
@ 5.8GHz
Vds = 1.5V
@ 7.9GHz
Vds = 1.5V
@ 12.1GHz
Vds = 3.0V
@ 1.1GHz
Vds = 3.0V
@ 2.2GHz
Vds = 3.0V
@ 5.8GHz
Vds = 3.0V
@ 7.9GHz
Vds = 3.0V
@ 12.1GHz
Production Process
TQTRx
MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 5 of 7; Rev 2.1 8/10/02
EFET
IV Curves
300 um
DFET
IV Curves
300 um
GFET
IV Curves
300 um
Production Process
TQTRx
MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 6 of 7; Rev 2.1 8/10/02
Applications Examples
TQ5M31; 3V Downconverter Mixer IC:
General purpose RFIC mixer downcnverter; RF range = 500 to 2,500 MHz; IF output range 45 to
500 MHz; PCS, ISM, GPS, L-Band Satellite and WLAN applications.
(Full Datasheet at:
www.tqs.com/Wireless/Products/TQ5M31/TQ5M31.pdf
)
TQ3M31; Dual Band LNA:
For Cellular and PCS band CDMA/AMPS applications; IS-95 and AMPS compliant; On-Chip
switches for mode selection.
(Full Datasheet at:
www.tqs.com/Wireless/Products/TQ3M31/TQ3M31.pdf
)
Parameter
Min
Typ
Max
Units
Conversion Gain
4.0
dB
Noise Figure
8.5
dB
Input 3OIP
9.0
dB
DC Supply Current
6.2
mA
Parameter
Typ @ 881 MHz
Typ@ 1960 MHz
Units
Gain 881 MHz
13.0
13.5
dB
Noise Figure
1.4
1.5
dB
Input 3OIP
12.5
9.0
dBm
DC Supply Current
10.0
11.0
mA
Production Process
TQTRx
MESFET Foundry Service
Semiconductors for Communications
www.triquint.com
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
Page 7 of 7; Rev 2.1 8/10/02
Applications Support Services
Tiling of GDSII Stream Files including PCM
Design Rule Check Services
Layout versus Schematic Check Services
Packaging Development Engineering
Engineering Services
On-Wafer Test
Packaged Parts Test
Thermal Analysis
Yield Enhancement
Part Qualification Services
Failure Analysis
Manufacturing Services
Mask Making
Production 150 mm Wafer Fab
Wafer Thinning
Wafer Sawing
Substrate Vias
DC Die Sort Testing
RF On-Wafer Testing
Plastic Packaging
RF Packaged Part Testing
Please contact your local TriQuint Semiconductor Representative or
Foundry Services Staff for additional information:
E-mail: sales@triquint.com Phone: (503) 615-9000 Fax: (503) 615-8905
Design Tools Available
Device Library of Circuit Elements: FETs, Diodes, Thin
Film and Implanted Resistors, Capacitors, Inductors
Parameters for "TriQuint's Own Model" (TOM)
Agilent ADS Design Kit Available Now
PSPICE and MWO Models Available Now
Layout Libraries Available for ICED, Cadence and
MWO Now
Verification Kit for ICEditors Now
Qualified Package Models for Supported Package Styles
Prototyping and Development
Prototype Development QuickTurn (PDQ):
Shared Mask Set;
Run Monthly
Hot Lot Cycle Time
Via and Non-Via Options
Prototype Wafer Option (PWO):
Customer-specific Masks, Customer Schedule
2 wafers delivered
Hot Lot Cycle Time
With thinning and sawing; optional backside
vias
Design Sensitivity Test (DST) Wafer Run
Yield Analysis
Design Sensitivity to Process Variation
14 Wafer Start; Spread of Vp Values
Process Qualification
Status
TQTRx is fully released and qualified
Reliability Reports:
TQTRx Process Qualification
High Power Product Qualification
TQTRx Element Qualification Report
For more information on Quality and Reliability,
contact TriQuint or visit
www.tqs.com/
Manufacturing/QR/bdy_qr-pubs.htm.
Training
GaAs Design Classes:
Half Day Introduction; Upon Request
Four Day Technical Training; Fall & Spring at
TriQuint Oregon facility
For Training & PDQ Schedules, please visit:
www.triquint.com/foundry/
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