VPIN (Vertical P-I-N) GaAs Diode
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 1 of 3; 9/24/02
Specifications are subject to change.
Features
Multiple P-I-N diode sizes
Low on-state resistance
Low off-state capacitance
Device passivation
High Q passives
MIM capacitors
TaN resistors
2 metal layers
Air bridges
Substrate vias
Applications
Communications
Space
Military
Phase shifters
Limiters
Switches
Variable attenuators
General Description
The VPIN (Vertical P-I-N) GaAs Diode process is excel-
lent for low-loss limiters, switches, and phase shifters. Us-
ing this process, TriQuint has produced switches with high
power handling capability, low on-state resistance, and low
off-state capacitance. The higher cutoff frequency of the
PIN diode element makes this switch ideal for broadband
electronic components and communication systems. Pas-
sives include 2 thick-metal interconnect layers, precision
TaN resistors, GaAs resistors, MIM capacitors and
through-substrate vias. The via-under-cap process aids in
size compaction and offers excellent grounds at higher fre-
quencies. Air bridges produce minimal interconnect capaci-
tance.
VPIN Structure Cross-Section
Semi-insulating GaAs
n-GaAs, 0.75 m
Contacts
i-GaAs, 1.2 m
p-GaAs, 0.25 m
Ti/Pt/Au, 0.6 m
VPIN (Vertical P-I-N) GaAs Diode
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 2 of 3; 9/24/02
Specifications are subject to change.
Application Examples
DC to 20 GHz SP4T PIN Switch TGS 2304-SCC:
The TriQuint TGA2304-SCC is a GaAs monolithic P-I-N diode single-pole, four-throw switch that
operates from DC to 20 GHz. At a bias current of 10 mA per output arm, typical midband perform-
ance is 0.6 dB insertion loss with 40 dBm isolation in the off-arms. Isolation and insertion loss can
be adjusted by varying the output arm bias current of the switch.
Wideband Dual Stage Limiter TGL 2201:
This limiter is a 3 to 25 GHz limiter with less than 0.75 dB loss at X-band and 15 dB return losses.
The limiter's RF leakage is less than 18 dBm at 1 W P
in
and it has an input power survivability
greater than 5 W.
Size (m)
Layout Type
Substrate (m)
15
round
100
25
round
100
30
round
100
VPIN Models Available
Element
Parameter
Typical Value
Units
Diodes
MIM capacitors
density
300
pF/mm
2
Capacitors over vias
yes
TaN resistors
sheet resistance
50
V
/sq
Vias
yes
Substrate
thickness
100
m
VPIN Process Details
VPIN (Vertical P-I-N) GaAs Diode
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 3 of 3; 9/24/02
Specifications are subject to change.
Prototyping and Development
Prototype Wafer Option (PWO)
Customer-specific masks
Customer schedule
2 wafers delivered
Backside via process included
PCM (process control monitor) qualified
wafers
Process Status
VPIN (Vertical P-I-N) GaAs Diode is fully re-
leased and qualified
Contact TriQuint or visit
http://www.triquint.com/company/quality/
for more information on quality and reliability.
Manufacturing Services
Mask making
Wafer thinning
Wafer dicing
Substrate vias
DC die-sort testing
RF die-sort testing
Final visual testing
Design Tools
Device libraries of circuit elements:
Diodes
Thin-film resistors
Capacitors
Inductors
Agilent ADS design kit
Training
GaAs design classes:
Half-day introduction upon request
3-day technical training upon request at
the TriQuint Texas facility
Applications Services
Tiling of GDSII stream files including PCM
(process control monitor)
Design rule checking
Layout versus schematic checking
Engineering:
On-wafer DC test
On-wafer RF test
Thermal analysis
Yield enhancement
Part qualification
Failure analysis
Space Qualification
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