1N5348B THRU 1N5388B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts
FEATURES
l
Low profile package
l
Built-in strain relief
l
Glass passivated junction
l
Low inductance
l
Typical I
D
less than 1 A above 13V
l
High temperature soldering :
260 /10 seconds at terminals
l
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-201AE Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Standard Packaging: 52mm tape
Weight: 0.04 ounce, 1.1 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNITS
DC Power Dissipation @ T
L
=75 , Measure at Zero Lead Length(Fig. 1)
Derate above 75 (Note 1)
P
D
5.0
40.0
Watts
mW/
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note 1,2)
I
FSM
See Fig. 5
Amps
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 to +150
NOTES:
1. Mounted on 8.0mm
2
copper pads to each terminal.
2. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum.
DO-201AE
1N5348B THRU 1N5388B
ELECTRICAL CHARACTERISTICS (T
A
=25 unless otherwise noted, V
F
=1.2 Max @ I
F
=1A for all types.
Maximum Zener
Impedance
Max reverse
Leakage
Current
Type No.
(Note 1.)
Nominal Zener
Voltage Vz @ I
ZT
volts
(Note 2.)
Test current
I
ZT
mA
Z
ZT
@ I
ZT
Ohms
(Note 2.)
Z
Zk
@ I
ZK
= 1 mA
Ohms
(Note 2.)
I
R
A
V
R
Volts
Max Surge
Current Ir Amps
(Note 3.)
Max Voltage
Regulation
Vz, Volts
(Note 4.)
Maximum
Regulator
Current
I
ZM
mA
(Note 5.)
1N5348B
1N5349B
1N5350B
1N5351B
11
12
13
14
125
100
100
100
2.5
2.5
2.5
2.5
125
125
100
75
5
2
1
1
8.4
9.1
9.9
10.6
8
7.5
7
6.7
0.25
0.25
0.25
0.25
430
395
365
340
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
15
16
17
18
19
75
75
70
65
65
2.5
2.5
2.5
2.5
3
75
75
75
75
75
1
1
0.5
0.5
0.5
11.5
12.2
12.9
13.7
14.4
6.3
6
5.8
5.5
5.3
0.25
0.3
0.35
0.4
0.4
315
295
280
265
250
1N5357B
1N5358B
1N5359B
1N5360B
1N5361B
20
22
24
25
27
65
50
50
50
50
3
3.5
3.5
4
5
75
75
100
110
120
0.5
0.5
0.5
0.5
0.5
15.2
16.7
18.2
19
20.6
5.1
4.7
4.4
4.3
4.1
0.4
0.45
0.55
0.55
0.6
237
216
198
190
176
1N5362B
1N5363B
1N5364B
1N5365B
1N5366B
28
30
33
36
39
50
40
40
30
30
6
8
10
11
14
130
140
150
160
170
0.5
0.5
0.5
0.5
0.5
21.2
22.8
25.1
27.4
29.7
3.9
3.7
3.5
3.3
3.1
0.6
0.6
0.6
0.65
0.65
170
158
144
132
122
1N5367B
1N5368B
1N5369B
1N5370B
1N5371B
43
47
51
56
60
30
25
25
20
20
20
25
27
35
40
190
210
230
280
350
0.5
0.5
0.5
0.5
0.5
32.7
35.8
38.8
42.6
45.5
2.8
2.7
2.5
2.3
2.2
0.7
0.8
0.9
1
1.2
110
100
93
86
79
1N5372B
1N5373B
1N5374B
1N5375B
1N5376B
62
68
75
82
87
20
20
20
15
15
42
44
45
65
75
400
500
620
720
760
0.5
0.5
0.5
0.5
0.5
47.1
51.7
56
62.2
66
2.1
2
1.9
1.8
1.7
1.35
1.5
1.6
1.8
2
76
70
63
58
54.5
1N5377B
1N5378B
1N5379B
1N5380B
1N5381B
91
100
110
120
130
15
12
12
10
10
75
90
125
170
190
760
800
1000
1150
1250
0.5
0.5
0.5
0.5
0.5
69.2
76
83.6
91.2
98.8
1.6
1.5
1.4
1.3
1.2
2.2
2.5
2.5
2.5
2.5
52.5
47.5
43
39.5
36.6
1N5382B
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
140
150
160
170
180
190
8
8
8
8
5
5
230
330
35 0
380
430
450
1500
1500
1650
1750
1750
1850
0.5
0.5
0.5
0.5
0.5
0.5
106
114
122
129
137
144
1.2
1.1
1.1
1
1
0.9
2.5
3
3
3
4
5
34
31.6
29.4
28
26.4
25
1N5388B
200
5
480
1850
0.5
152
0.9
5
23.6
NOTE:
1. TOLERANCE AND VOLTAGE DESIGNATION - The JEDEC type numbers shown indicate a tolerance of
10% with
guaranteed limits on only Vz, I
R
, I
r
, and V
F
as shown in the electrical characteristics table. Units with guaranteed limits
on all seven parameters are indicated by suffix "B" for
5% tolerance.
2. ZENER VOLTAGE (Vz) AND IMPEDANCE (Z
ZT
& Z
ZK
) - Test conditions for Zener voltage and impedance are as
follows; Iz is applied 40
10 ms prior to reading. Mounting contacts are located from the inside edge of mounting
clips to the body of the diode.(T
A
=25
).
3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave
current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge
current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on
logarithmic paper. Examples of this, using the 6.8v and 200V zeners, are shown in Figure 6. Mounting
contact located as specified in Note 3. (T
A
=25
).
4. VOLTAGE REGULATION ( Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made
at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the
same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40
10 ms.
(T
A
=25
). Mounting contact located as specified in Note2.
5. MAXIMUM REGULATOR CURRENT (I
ZM
) - The maximum current shown is based on the maximum voltage of a
5% type unit. Therefore, it applies only to the B-suffix device. The actual I
ZM
for any device may not exceed the
value of 5 watts divided by the actual Vz of the device. T
L
=75 at maximum from the device body.
RATING AND CHARACTERISTICS CURVES
1N5348B THRU 1N5388B
TEMPERATURE COEFFICIENTS
Fig. 1-POWER TEMPERATURE DERATING CURVE Fig. 2-TEMPERATURE COEFFICIENT RANGE
FOR UNITS 6 TO 220 VOLTS
Fig. 3-TYPICAL THERMAL RESPONSE
Fig. 4-TYPICAL THERMAL RESISTANCE Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT
VERSUS NOMINAL ZENER VOLTAGE(
SEE NOTE 3
)
RATING AND CHARACTERISTICS CURVES
1N5348B THRU 1N5388B
Fig. 6-PEAK SURGE CURRENT VERSUS PULSE Fig. 7-ZENER VOLTAGE VERSUS ZENER CURRENT
WIDTH(SEE NOTE 3) V
Z
=6.8 THRU 10 VOLTS
Fig. 8- ZENER VOLTAGE VERSUS ZENER CURRENT Fig. 9- ZENER VOLTAGE VERSUS ZENER CURRENT
V
Z
= 11 THRU 75 VOLTS V
Z
= 82 THRU 200 VOLTS
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
LA
P
D
+ T
A
LA
is the lead-to-ambient thermal resistance ( /W)
and P
D
is the power dissipation.
Junction Temperature, T
J
, may be found from:
T
J
= T
L
+ T
JL
T
JL
is the increase in junction temperature above the
lead temperature and may be found from Figure 3 for a
train of power pulses or from Figure 4 for dc power.
T
JL
=
JL
P
D
For worst-case design, using expected limits of Iz, limits
of P
D
and the extremes of T
J
( T
J
) may be estimated.
Changes in voltage, Vz, can then be found from:
V
=
VZ
T
J
VZ
, the zener voltage temperature coefficient, is fount
from Figures 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly be
the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 3 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots
resulting in device degradation should the limits of
Figure. 5 be exceeded.
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