TO-92 Plastic-Encapsulate
d Transistors
2N5551
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 0.625 W (Tamb=25
)
Collector current
I
CM
: 0.6 A
Collector-base voltage
V
(BR)CBO
: 180 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A, I
E
=0
180
V
Collector-emitter breakdown
voltage
V
(BR)CEO
Ic= 100
A, I
B
=0
160
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 100
A, I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
= 180 V, I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 4 V, I
C
=0
0.1
A
h
FE(1)
V
CE
= 5 V, I
C
= 1 mA
80
h
FE(2)
V
CE
= 5 V, I
C
= 10 mA
80
250
DC current gain
h
FE(3)
V
CE
= 5 V, I
C
= 50 mA
50
Collector-emitter saturation voltage
V
CEsat
I
C
= 50 mA, I
B
= 5 mA
0.5
V
Base-emitter saturation voltage
V
BEsat
I
C
= 50 mA, I
B
= 5 mA
1
V
Transition frequency
f
T
V
CE
= 5 V,I
C
= 10 mA,
f =
30MHz
80
MHz
CLASSIFICATION OF h
FE(2)
Rank
A B
C
Range
80-160 120-180
150-250
1
2
3
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Transys
Electronics
L I M I T E D
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