TO-92L Plastic-Encapsulate
d
Transistors
2SA935
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
: 0.75 W (Tamb=25
)
Collector current
I
CM
: -0.7 A
Collector-base voltage
V
(BR)CBO
: -80 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
-50
A, I
E
=0
-80
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
-2
mA, I
B
=0
-80
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
-50
A, I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=
-50
V, I
E
=0
-0.5
A
Emitter cut-off current
I
EBO
V
EB
=-4V, I
C
=0
-0.5
A
DC current gain
h
FE(1)
V
CE
=
-3
V, I
C
=
-100
mA
82
390
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
-500
mA, I
B
=
-50
mA
-0.4
V
Transition frequency
f
T
V
CE
=
-10
V, I
C
=
-50
mA
100
MHz
Collector output capacitance
C
ob
V
CB
=
-10
V, I
E
=0, f=
1
MHz
20
pF
CLASSIFICATION OF h
FE(1)
Rank P
Q
R
Range
82-180 120-270 180-390
Marking
1 2 3
TO-92L
1.
EMITTER
2.
COLLECTOR
3.
BASE
Transys
Electronics
L I M I T E D
PDF 
ZIP