TO-126C Plastic-Encapsulate
d
Transistors
2SB649/2SB649A
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
: 1 W (Tamb=25
)
Collector current
I
CM
: -1.5 A
Collector-base voltage
V
(BR)CBO
: -180 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
-1
mA, I
E
=0
-180
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
-10
mA, I
B
=0 2SB649
2SB649A
-120
-160
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
-1m
A, I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=
-160
V, I
E
=0
-10
A
Emitter cut-off current
I
EBO
V
EB
=
-4
V, I
C
=0
-10
A
h
FE(1)
V
CE
=-5V, I
C
=
-150
mA 2SB649
2SB649A
60
60
320
200
DC current gain
h
FE(2)
V
CE
=
-5
V, I
C
=
-500
mA
30
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
-500
mA, I
B
=
-50
mA
-1
V
Base-emitter voltage
V
BE
V
CE
=
-5
V, I
C
=
-150
mA
-1.5
V
Transition frequency
f
T
V
CE
=
-5
V, I
C
=
-150
mA
140
MHz
Collector output capacitance
C
ob
V
CB
=
-10
V, I
E
=0, f=
1
MHz
27
pF
CLASSIFICATION OF h
FE(1)
Rank B
C
D
Range
60-120 100-200 160-320
Marking
1 2 3
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
Transys
Electronics
L I M I T E D
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