TO-92 Plastic-Encapsulate
d
Transistors
2SC1674
TRANSISTOR (NPN)
FEATURE
Power dissipation
P
CM
: 0. 25 W (Tamb=25
)
Collector current
I
CM
: 0.02 A
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A , I
E
=0
30 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 1 mA, I
B
=0 20
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 100
A, I
C
=0
4 V
Collector cut-off current
I
CBO
V
CB
= 30V, I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
=3V , I
C
=0
0.1
A
DC current gain
h
FE
V
CE
=6 V, I
C
= 1mA
40
180
Collector-emitter saturation voltage
V
CE(sat)
I
C
=10 mA, I
B
= 1 mA
0.3
V
Base-emitter voltage
V
BE
(ON) V
CE
=6 V, I
C
= 1mA
0.72
V
Transition frequency
f
T
V
CE
=6 V, I
C
= 1mA
400 MHz
Collector output capacitance
C
ob
V
CE
=6V, I
E
=0, f=1MHz
1.5
pF
Noise figure
NF
V
CE
=6V, I
C
=1mA, f=100MHz,
R
S
=50
5
dB
Power gain
G
P
V
CE
=6V,I
C
=1mA,f=100MHz 18 dB
CLASSIFICATION OF h
FE(1)
Rank
Y
GR
BL
Range
40-80 60-120 90-180
1
2
3
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
.
Transys
Electronics
L I M I T E D
PDF 
ZIP