3EZ11 THRU 3EZ200

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts

FEATURES

Low profile package

Built-in strain relief

Glass passivated junction

Low inductance

Excellent clamping capability

Typical I

less than 1 A above 11V

High temperature soldering :

260 /10 seconds at terminals

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

MECHANICAL DATA

Case: JEDEC DO-15, Molded plastic over passivated junction

Terminals: Solder plated, solderable per MIL-STD-750,

method 2026

Polarity: Color band denotes positive end (cathode)

Standard Packaging: 52mm tape

Weight: 0.015 ounce, 0.04 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

VALUE

UNITS

Peak Pulse Power Dissipation (Note A)
Derate above 75

Watts

mW/

Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note B)

FSM

Amps

Operating Junction and Storage Temperature Range

STG

-55 to +150

NOTES:

A. Mounted on 5.0mm

(.013mm thick) land areas.

B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses

per minute maximum.

DO-15

3EZ11 THRU 3EZ200

ELECTRICAL CHARACTERISTICS (T

=25 unless otherwise noted) V

=1.2 V max , I

=500 mA for all types

Maximum Zener Impedance (Note 3.) Leakage Current

Type No.

(Note 1.)

Nominal Zener

Voltage Vz @ I

volts

(Note 2.)

Test

current

@ I

Ohms

@ I

Ohms

A Max

Volts

Maximum Zener

Current

Madc

Surge Current

@ T

= 25

ir - mA

(Note 4.)

3EZ11

3EZ12
3EZ13

11
12
13

68
63
58

4.5
4.5

700
700
700

0.25
0.25
0.25

1
1

0.5

8.4
9.1
9.9

225
246
208

1.82
1.66
1.54

3EZ14
3EZ15
3EZ16
3EZ17

14
15
16
17

53
50
47
44

5.5
5.5

700
700
700
750

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

10.6

11.4

12.2

193
180
169
150

1.43
1.33
1.25
1.18

3EZ18
3EZ19
3EZ20
3EZ22

18
19
20
22

42
40
37
34

6
7
7
8

750
750
750
750

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

13.7
14.4
15.2
16.7

159
142
135
123

1.11
1.05

0.91

3EZ24
3EZ27
3EZ28
3EZ30

24
27
28
30

31
28
27
25

10
12
16

750
750
750

1000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

18.2
20.6

22.5

112

100

96
90

0.83
0.74
0.71
0.67

3EZ33
3EZ36
3EZ39
3EZ43

33
36
39
43

23
21
19
17

20
22
28
33

1000
1000
1000
1500

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

25.1
27.4
29.7
32.7

82
75
69
63

0.61
0.56
0.51
0.45

3EZ47
3EZ51
3EZ56
3EZ62

47
51
56
62

16
15
13
12

38
45
50
55

1500
1500
2000
2000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

35.6
38.8
42.6
47.1

57
53
48
44

0.42
0.39
0.36
0.32

3EZ68
3EZ75
3EZ82
3EZ91

68
75
82
91

9.1
8.2

70
85
95

115

2000
2000
3000
3000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

51.7

62.2
69.2

40
36
33
30

0.29
0.27
0.24
0.22

3EZ100
3EZ110
3EZ120
3EZ130

100

110

120
130

7.5
6.8
6.3
5.8

160
225
300
375

3000
4000
4500
5000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

83.6
91.2
98.8

27
25
22
21

0.2

0.18
0.16
0.15

3EZ140
3EZ150
3EZ160
3EZ170

140
150
160
170

5.3

4.7
4.4

475
550
625
650

5000
6000
6500
7000

0.25
0.25
0.25
0.25

0.5
0.5
0.5
0.5

106.4

114

121.6
130.4

19
18
17
16

0.14
0.13
0.12
0.12

3EZ180
3EZ190
3EZ200

180
190
200

4.2

3.7

700
800
875

7000
8000
8000

0.25
0.25
0.25

0.5
0.5
0.5

136.8
144.8

152

15
14
13

0.11

0.1
0.1

NOTES:

1. TOLERANCES - Suffix indicates 5% tolerance any other tolerance will be considered as a special device.

2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms

�

10ms

from the diode body, and an ambient temperature of 25 ( 8 , -2 ).

3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage,

which results when an ac current having an rms falue equal to 10% of the dc zener current (I

or I

) is

superimposed on I

or I

4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is

maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse

of 1/120 second duration superimposed on the test current, I

, per JEDEC standards, however, actual

device capability is as described in Figure 3.

RATING AND CHARACTERISTICS CURVES

3EZ11 THRU 3EZ200

Fig. 2-TYPICAL THERMAL RESPONSE L

Fig. 3-MAXIMUM SURGE POWER Fig. 4-TYPICAL REVERSE LEAKAGE

APPLICATION NOTE:

Since the actual voltage available from a given zener

diode is temperature dependent, it is necessary to

determine junction temperature under any set of

operating conditions in order to calculate its value. The

following procedure is recommended:

Lead Temperature, T

, should be determined from:

TL =

+ T

is the lead-to-ambient thermal resistance ( /W)

and P

is the power dissipation. The value for

will

vary and depends on the device mounting method.

is generally 30-40 /W for the various chips and

tie points in common use and for printed circuit board

wiring.

The temperature of the lead can also be measured using

a thermocouple placed on the lead as close as possible

to the tie point. The thermal mass connected to the tie

point is normally large enough so that it will not

significantly respond to heat surges generated in the

diode as a result of pulsed operation once steady-state

conditions are achieved. Using the measured value of

, the junction temperature may be determined by:

= T

+ T

is the increase in junction temperature above the

lead temperature and may be found from Figure 2 for a

train of power pulses or from Figure 10 for dc power.

For worst-case design, using expected limits of Iz, limits

of P

and the extremes of T

( T

) may be estimated.

Changes in voltage, Vz, can then be found from:

V =

, the zener voltage temperature coefficient, is

found from Figures 5 and 6.

Under high power-pulse operation, the zener voltage

will vary with time and may also be affected significantly

be the zener resistance. For best regulation, keep current

excursions as low as possible.

Data of Figure 2 should not be used to compute surge

capability. Surge limitations are given in Figure 3. They

are lower than would be expected by considering only

junction temperature, as current crowding effects cause

temperatures to be extremely high in small spots

resulting in device degradation should the limits of Figure

3 be exceeded.

RATING AND CHARACTERISTICS CURVES

3EZ11 THRU 3EZ200

TEMPERATURE COEFFICIENT REAGES

(90% of the Units are int he Ranges Indicated)

Fig. 5-UNITS TO 12 VOLTS Fig. 6-UNITS 10 TO 200 VOLTS

Fig. 7-V

= 3.9 THRU 10 VOLTS Fig. 8- V

= 12 THRU 82 VOLTS

Электронный компонент: 3EZ130