TO-252 Plastic-Encapsulate
d Transistors
2SD1899-Z
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 2 W (Tamb=25
)
Collector current
I
CM
: 3 A
Collector-base voltage
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specifie)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
100
A, I
E
=0
60
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
1
mA, I
B
=0
60
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
100
A,I
C
=0
7
V
Collector cut-off current
I
CBO
V
CB
=
60
V, I
E
=0
10
A
Emitter cut-off current
I
EBO
V
EB
=
7
V, I
C
=0
10
A
h
FE(1)
V
CE
=
2
V, I
C
=
200
mA
60
h
FE(2)
V
CE
=
2
V, I
C
=
600
mA
100
400
DC current gain
h
FE(3)
V
CE
=
2
V, I
C
=
2
A
50
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
1.5
A, I
B
=
150
mA
0.25
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=
1.5
A, I
B
=
150
mA
1.2
V
Transition frequency
f
T
V
CE
=
5
V, I
C
=
1.5
A
120
MHz
Collector output capacitance
C
ob
V
CB
=
10
V, I
E
=0, f=
1
MHz
30
pF
Turn on Time
t
on
0.5
Storage Time
t
stg
2.0
Switching Time
Fall Time
t
f
V
CC
=30V, I
C
=1A, I
B1
=-I
B2
=-0.05A
0.5
s
CLASSIFICATION OF h
FE(1)
Rank M
L
K
Range
100-200 160-320 200-400
TO-252
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Transys
Electronics
L I M I T E D
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