TR2.5 SERIES
SILICON TRIACS
l
Sensitive Gate Triacs
l
2.5 A RMS
l
Glass Passivated Wafer
l
400 V to 800 V Off-State Voltage
l
Max I
GT
of 5 mA (Quadrant 1)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
1
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at
the rate of 100 mA/C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TR2.5-400-14
TR2.5-600-14
TR2.5-700-14
TR2.5-800-14
V
DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2)
I
T(RMS)
2.5
A
Peak on-state surge current full-sine-wave (see Note 3)
I
TSM
12
A
Peak on-state surge current half-sine-wave (see Note 4)
I
TSM
14
A
Peak gate current
I
GM
0.2
A
Peak gate power dissipation at (or below) 85C case temperature (pulse width
200
m
s)
P
GM
1.3
W
Average gate power dissipation at (or below) 85C case temperature (see Note 5)
P
G(AV)
0.3
W
Operating case temperature range
T
C
-40 to +110
C
Storage temperature range
T
stg
-40 to +125
C
Lead temperature 1.6 mm from case for 10 seconds
T
L
230
C
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0
T
C
= 110C
1
mA
I
GTM
Peak gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
5
-8
-10
25
mA
V
GTM
Peak gate trigger
voltage
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
0.9
-1.2
-1.2
1.2
2.5
-2.5
-2.5
V
All voltages are with respect to Main Terminal 1.
TR2.5 SERIES
SILICON TRIACS
All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
1 ms, duty cycle
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
W
, t
p(g)
= 20
m
s, t
r
=
15 ns, f = 1 kHz.
V
TM
Peak on-state voltage
I
TM
= 3.5 A
I
G
= 50 mA
(see Note 6)
1.9
V
I
H
Holding current
V
supply
= +12 V
V
supply
= -12 V
I
G
= 0
I
G
= 0
Init' I
TM
= 100 mA
Init' I
TM
= - 100 mA
30
-30
mA
I
L
Latching current
V
supply
= +12 V
V
supply
= -12 V
(see Note 7)
40
-40
mA
dv/dt
Critical rate of rise of
off-state voltage
V
DRM
= Rated V
DRM
I
G
= 0
T
C
= 110C
50
V/s
dv/dt
(c)
Critical rise of
commutation voltage
V
DRM
= Rated V
DRM
I
TRM
= 3.5 A
T
C
= 85C
2
V/s
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
q
JC
Junction to case thermal resistance
10
C/W
R
q
JA
Junction to free air thermal resistance
62.5
C/W
electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TR-2.5 SERIES
SILICON TRIACS
TO-220
3-pin plastic flange-mount packag
e
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
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