TS13003HV
1-3
2004/09 rev. A
TS13003HV
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BV
CEO
= 530V
BV
CBO
= 900V
Ic = 1.5A
V
CE (SAT)
, = 0.5V @ Ic / Ib = 0.5A / 0.1A
Features
High voltage
.
High speed switching
Structure
Silicon triple diffused type.
NPN silicon transistor
Ordering Information
Part No.
Packing
Package
TS13003HVCT B0
Bulk Pack
TO-92
TS13003HVCT A3
Ammo Pack
TO-92
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
900V V
Collector-Emitter Voltage
V
CEO
530V V
Emitter-Base Voltage
V
EBO
10
V
DC 1.5
Collector Current
Pulse
I
C
3
A
Collector Power Dissipation
P
D
0.6 W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
STG
- 55 to +150
o
C
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
Electrical Characteristics
(Ta = 25
o
C unless otherwise noted)
Parameter Conditions
Symbol
Min Typ Max
Unit
Static
Collector-Base Voltage
I
C
= 10mA, I
B
= 0
BV
CBO
900 --
-- V
Collector-Emitter Breakdown Voltage
I
C
= 10mA, I
E
= 0
BV
CEO
530 --
-- V
Emitter-Base Breakdown Voltage
I
E
= 1mA, I
C
= 0
BV
EBO
9 -- -- V
Collector Cutoff Current
V
CB
= 800V, I
E
= 0
I
CBO
-- -- 10
uA
Emitter Cutoff Current
V
EB
= 10V, I
C
= 0
I
EBO
-- -- 0.5
uA
Collector-Emitter Saturation Voltage
I
C
/ I
B
= 1.5A / 0.5A
I
C
/ I
B
= 0.5A / 0.1A
V
CE(SAT)1
V
CE(SAT)2
--
--
--
--
2.5
0.8
V
DC Current Gain
V
CE
= 10V, I
C
= 10uA
V
CE
= 10V, I
C
= 0.4A
V
CE
= 10V, I
C
= 1.0A
h
FE
15
20
6
--
--
--
40
40
40
Frequency V
CE
= 10V, I
C
= 0.1A
f
T
4
--
--
MHz
Output Capacitance
V
CB
= 10V, f = 0.1MHz
Cob
--
21
--
pF
Turn On Time
t
ON
-- 1.1 --
uS
Storage Time
t
STG
-- -- 4 uS
Fall Time
V
CC
= 125V, I
C
= 1A,
I
B1
= 0.2A, I
B2
= - 0.2A,
R
L
= 125ohm
t
f
-- --
0.7
uS
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TS13003HV
2-3
2004/09 rev. A
Electrical Characteristics Curve
Figure 1. Static Characteric
Figure 2. DC Current Gain
Figure 3. Vce(sat) v.s. Vbe(sat)
Figure 4. Switching Time
Figure 5. Safe Operating Area
Figure 6. Power Derating
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