TS2N2222A
1-1
2003/12 rev. A
TS2N2222A
General Purpose NPN Transistor
BV
CEO
= 40V
Ic = 600mA
V
CE (SAT)
, = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
Features
Driver stage of AF amplifier
.
General purpose switching application
Structure
Epitaxial planar type.
Ordering Information
Part No.
Packing
Package
TS2N2222ACX RF
3kpcs / Reel SOT-23
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
60V V
Collector-Emitter Voltage
V
CEO
40V V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
0.6 A
Collector Power Dissipation
P
D
225
mW
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
STG
- 55 to +150
o
C
Note: 1. Single pulse, Pw = 380uS, Duty <= 2%
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter Conditions
Symbol
Min Typ Max
Unit
Static
Collector-Base Voltage
I
C
= 100uA, I
E
= 0
BV
CBO
60 -- -- V
Collector-Emitter Breakdown Voltage
I
C
= 1mA, I
B
= 0
BV
CEO
40 -- -- V
Emitter-Base Breakdown Voltage
I
E
= 10uA, I
C
= 0
BV
EBO
6 -- -- V
Collector Cutoff Current
V
CB
= 20V, I
E
= 0
I
CBO
-- -- 0.1
uA
Emitter Cutoff Current
V
EB
= 4V, I
C
= 0
I
EBO
-- -- 0.1
uA
Collector-Emitter Saturation Voltage
I
C
/ I
B
= 150mA / 15mA
V
CE(SAT)1
-- -- 0.4
V
Collector-Emitter Saturation Voltage
I
C
/ I
B
= 500mA / 50mA
V
CE(SAT)2
-- 0.20 0.75 V
DC Current Transfer Ratio
V
CE
= 1V, I
C
= 0.15A
h
FE
100 -- 300
Transition Frequency
V
CE
=10V, I
C
=20mA, f=100MHz
f
T
--
250
--
MHz
Output Capacitance
V
CB
= 5V, f=1MHz
Cob
--
--
6.5
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Pin assignment:
1. Base
2. Emitter
3. Collector
TS2N2222A
3-3
2003/12 rev. A
SOT-23 Mechanical Drawing
D
C
A
E
B
G
F
SOT-23 DIMENSION
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 2.80 3.04 0.110 0.120
B 0.30 0.50 0.012 0.020
C 1.70 2.30 0.067 0.091
D 0.25 0.65 0.010 0.026
E 1.2 1.60 0.047
0.063
F 0.89 1.30 0.035 0.051
G 0.08 0.17 0.003 0.006
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