TSM7311D
1-1
2003/12 rev. A
TSM7311D
20V Dual N-Channel MOSFET w/ESD Protected
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 6.5A =22m
R
DS (on)
, Vgs @ 2.5V, Ids @ 5.5A =30m
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
Ordering Information
Part No.
Packing
Package
TSM7311DCS
Tape & Reel
2,500/per reel
SOP-8
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20V V
Gate-Source Voltage
V
GS
12 V
Continuous Drain Current, V
GS
@4.5V.
I
D
6.5
A
Pulsed Drain Current, V
GS
@4.5V
I
DM
30 A
Ta = 25
o
C 2.0
Maximum Power Dissipation
Ta = 70
o
C
P
D
1.3
W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter Symbol
Limit
Unit
Junction to Foot (Drain) Thermal Resistance
R
jf
35
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted)
R
ja
62.5
o
C/W
Note: Surface mounted on FR4 board t<=10sec.
Pin assignment:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5, 6. Drain 2
7, 8. Drain 1
TSM7311D
2-2
2003/12 rev. A
Electrical Characteristics
Rate I
D
= 6.5A, (Ta = 25
o
C unless otherwise noted)
Parameter Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
20 -- -- V
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 6.5A
R
DS(ON)
-- 22 30
Drain-Source On-State Resistance
V
GS
= 2.5V, I
D
= 5.5A
R
DS(ON)
-- 30 40
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
0.5 0.85 -- V
Zero Gate Voltage Drain Current
V
DS
= 20V, V
GS
= 0V
I
DSS
-- --
1.0
uA
Gate Body Leakage
V
GS
= 4.5V, V
DS
= 0V
I
GSS
-- --
100
nA
On-State Drain Current
V
GS
= 4.5V, V
DS
>= 5V
I
D(ON)
30 -- -- A
Forward Transconductance
V
DS
= 10V, I
D
= 6.5A
g
fs
--
30
--
S
Dynamic
Total Gate Charge
Q
g
--
15.5
30
Gate-Source Charge
Q
gs
-- 2 --
Gate-Drain Charge
V
DS
= 10V, I
D
= 6.5A,
V
GS
= 4.5V
Q
gd
--
3.5
--
nC
Turn-On Delay Time
t
d(on)
-- 75
100
Turn-On Rise Time
t
r
--
125
150
Turn-Off Delay Time
t
d(off)
--
600
720
Turn-Off Fall Time
V
DD
= 10V, R
L
= 10,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6
t
f
--
300
360
nS
Input Capacitance
C
iss
--
1336
--
Output Capacitance
C
oss
--
220
--
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
130
--
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
2.0
A
Diode Forward Voltage
I
S
= 2.0A, V
GS
= 0V
V
SD
--
0.6
1.2
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM7311D
5-5
2003/12 rev. A
SOP-8 Mechanical Drawing
C
P
B
D
K
G
1
8
A
16
9
R
M
F
SOP-8 DIMENSION
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 4.80 5.00 0.189 0.196
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G
1.27 (typ)
0.05 (typ)
K 0.10 0.25 0.004 0.009
M 0
o
7
o
0
o
7
o
P 5.80 6.20 0.229 0.244
R 0.25 0.50 0.010 0.019
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