TSM9926D
1-3
2003/12 rev. B
TSM9926D
20V Dual N-Channel Enhancement Mode MOSFET
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 6A =30m
R
DS (on)
, Vgs @ 2.5V, Ids @ 5.2A =40m
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Surface
mount
Fast
switching
Ordering Information
Part No.
Packing
Package
TSM9926DCX6
Tape & Reel
SOT-26
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20 V
Gate-Source Voltage
V
GS
12 V
Continuous Drain Current, V
GS
@4.5V.
I
D
6
A
Pulsed Drain Current, V
GS
@4.5V
I
DM
30 A
Ta = 25
o
C 1.25
W
Maximum Power Dissipation
Ta = 25
o
C (Peak)
P
D
2 W
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter Symbol
Limit
Unit
Junction to Ambient Thermal Resistance (PCB mounted)
R
ja
100
o
C/W
Note: Surface mounted on FR4 board t<=5sec.
Pin assignment:
1. Gate 1
2. Drain
3. Gate 2
4. Source 2
5. Drain
6. Source 1
TSM9926D
2-3
2003/12 rev. B
Electrical Characteristics (per channel)
Ta = 25
o
C unless otherwise noted
Parameter Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA
BV
DSS
20 -- -- V
Drain-Source On-State
Resistance
V
GS
= 4.5V, I
D
= 6A
R
DS(ON)
-- 21 30
Drain-Source On-State
Resistance
V
GS
= 2.5V, I
D
= 5.2A
R
DS(ON)
-- 30 40
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
0.6 -- -- V
Zero Gate Voltage Drain Current
V
DS
= 20V, V
GS
= 0V
I
DSS
-- --
1.0
uA
Gate Body Leakage
V
GS
= 12V, V
DS
= 0V
I
GSS
-- --
100
nA
Forward Transconductance
V
DS
= 10V, I
D
= 6A
g
fs
7
13
--
S
Dynamic
Total Gate Charge
Q
g
--
7.1
--
Gate-Source Charge
Q
gs
--
1.96
--
Gate-Drain Charge
V
DS
= 10V, I
D
= 6A,
V
GS
= 4.5V
Q
gd
--
2.94
--
nC
Turn-On Delay Time
t
d(on)
--
4.9
--
Turn-On Rise Time
t
r
--
2.6
--
Turn-Off Delay Time
t
d(off)
--
15.7
--
Turn-Off Fall Time
V
DD
= 10V, R
L
= 10,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6
t
f
--
14
--
nS
Input Capacitance
C
iss
--
620
--
Output Capacitance
C
oss
--
124
--
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
95 --
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
1.7
A
Diode Forward Voltage
I
S
= 1.7A, V
GS
= 0V
V
SD
-- --
1.2
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM9926D
3-3
2003/12 rev. B
SOT-26 Mechanical Drawing
SOT-26 DIMENSION
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 2.70 3.00 0.106 0.118
B 0.25 0.50 0.010 0.020
C 1.90(typ)
0.075(typ)
D 0.95(typ)
0.037(typ)
E 1.50 1.70 0.059 0.067
F 1.05 1.35 0.041 0.053
H 2.60 3.00 0.102 0.118
L 0.60(typ)
0.024(typ)
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