CHA2063a
Ref. : DSCHA20630096 -05-Apr-00
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
7-13GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2063a is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a
PM-HEMT process : 0.25m gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form or in an hermetic
leadless ceramic package.
Main Features
Broad band performance 7-13GHz
2.0dB noise figure, 8-13GHz
19dB gain
Low DC power consumption, 40mA
18dBm 3rd order intercept point
Chip size : 1,52 x 1,27 x 0.1mm
Pin Out
1 - NC
2 - NC
3 - RF output
4 - NC
5 - Vdd
6 - RF input
Main Characteristics
Tamb = +25C, package form
Symbol
Parameter
Min
Typ
Max
Unit
NF
Noise figure, 7-8GHz
Noise figure, 8-13GHz
2.5
2.0
3.0
2.5
dB
G
Gain
16
19
dB
G
Gain flatness
2.0
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
CHA2063a
7-13GHz Low Noise Amplifier
Ref. : DSCHA20630096 -05-Apr-00
2/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Package form
Tamb = +25C, Vd = +4V
Symbol
Parameter
Test
Condi
tions
Min
Typ
Max
Unit
Fop
Operating frequency range
7
13
Ghz
G
Gain
16
19
dB
G
Gain flatness
2
dB
NF
Noise figure 7-8 Ghz
Noise figure 8-13 GHz
2.5
2.0
3.0
2.5
dB
VSWRin
Input VSWR
2.0:1
2.5:1
VSWRout Ouput VSWR
2.0:1
2.5:1
P1dB
Output power at 1dB gain
compression F=10 GHz
8
dBm
IP3
3rd order intercept point
18
dBm
Id
Drain bias current
40
60
mA
Absolute Maximum Ratings
Tamb = +25C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage (3)
5.0
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3)See chip biasing option page 9/10
7-13GHz Low Noise Amplifier
CHA2063a
Ref. : DSCHA20630096 -05-Apr-00
3/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Chip form
Tamb = +25C, Vd = +4V
Symbol
Parameter
Test
Condi
tions
Min
Typ
Max
Unit
Fop
Operating frequency range
(1)
7
12
Ghz
G
Gain
17
19
dB
G
Gain flatness
2
dB
NF
Noise figure 7-8 Ghz
Noise figure 8-12 GHz
2.5
2.0
3.0
2.5
dB
VSWRin
Input VSWR
(1)
2.0:1
3.0:1
VSWRout Ouput VSWR
(1)
2.0:1
3.0:1
P1dB
Output power at 1dB gain
compression F=10 GHz
8
dBm
IP3
3rd order intercept point
18
dBm
Id
Drain bias current
40
80
mA
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports. When the chip is connected with typical 0.3 nH input and
output bonding wires, the indicated parameter values are close to those of the CHA2063a
packaged product.
CHA2063a
7-13GHz Low Noise Amplifier
Ref. : DSCHA20630096 -05-Apr-00
4/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Wafer Scattering Parameters
Tamb = +25C
Vd = 4.0V ; Vg1 = Vg2 = +2.5Volt ; Id = 40mA ( A,B,C,D & E not connected )
(see chip biasing option page 9/10)
Freq
GHz
S11
dB
S11
S12
dB
S12
S21
dB
S21
S22
dB
S22
5.00
-0.86
-91.7
--65.97
-63.6
6.08
-175.1
-7.99
-131.3
5.50
-1.66
-109.6
-57.28
-77.7
11.49
152.4
-9.91
-139.3
6.00
-3.56
-131.8
-50.70
-105.2
16.03
113.4
-11.62
-143.8
6.50
-7.75
-153.2
-46.25
-137.6
18.99
69.3
-12.74
-150.7
7.00
-14.77
-159.2
-43.76
-167.7
20.39
27.7
-14.62
-164.1
7.50
-21.16
-116.9
-42.21
166.7
20.79
-9.1
-18.09
-179.8
8.00
-19.40
-79.1
-41.19
145.2
20.89
-40.9
-24.49
160.0
8.50
-16.83
-61.4
-40.39
127.8
20.76
-69.6
-34.60
38.5
9.00
-14.68
-53.7
-39.78
111.7
20.45
-95.4
-23.38
-9.1
9.50
-12.52
-52.6
-39.31
96.9
20.16
-119.5
-18.53
-23.3
10.00
-10.61
-57.4
-38.85
83.9
19.79
-141.8
-15.76
-31.8
10.50
-9.31
-65.5
-38.51
72.6
19.36
-162.9
-13.58
-40.2
11.00
-8.38
-74.2
-38.14
62.0
18.85
176.6
-11.92
-48.5
11.50
-7.71
-83.7
-37.74
52.8
18.41
157.3
-10.67
-57.1
12.00
-7.26
-93.4
-37.17
44.1
17.94
138.1
-9.74
-65.8
12.50
-6.86
-103.8
-36.62
35.4
17.40
119.5
-9.01
-73.5
13.00
-6.57
-114.6
-35.91
27.3
16.84
101.6
-8.54
-81.7
13.50
-6.34
-126.4
-35.11
18.2
16.26
83.8
-8.21
-88.8
14.00
-6.18
-139.4
-34.27
8.5
15.65
66.5
-8.05
-95.7
14.50
-6.16
-153.5
-33.41
-1.9
15.01
49.1
-8.03
-101.7
15.00
-6.25
-169.0
-32.67
-13.3
14.35
31.7
-8.02
-106.9
7-13GHz Low Noise Amplifier
CHA2063a
Ref. : DSCHA20630096 -05-Apr-00
5/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results in package
Typical Response (In package Sij ) :
Tamb = +25C
Vd = 4.0V ; ; Id = 40mA
Gain slope : -0.015dB/C Id slope : -0.025mA/C
0
5
10
15
20
25
5
6
7
8
9
10
11
12
13
14
15
Frequency (GHz)
Gain (dB)
0
1
2
3
4
5
NF (dB)
-40 C
+80 C
25 C
Typical Gain and Noise Figure measurements in package
-40
-35
-30
-25
-20
-15
-10
-5
0
5
6
7
8
9
10
11
12
13
14
15
Frequency (GHz)
S
11, S
22 (
d
B
)
S11
S22
_40 C
_40 C
+80 C
+80 C
Typical Matching measurements in package.
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