CHA2063a
Ref. : DSCHA20630096 -05-Apr-00
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
7-13GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2063a is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a
PM-HEMT process : 0.25m gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form or in an hermetic
leadless ceramic package.
Main Features
Broad band performance 7-13GHz
2.0dB noise figure, 8-13GHz
19dB gain
Low DC power consumption, 40mA
18dBm 3rd order intercept point
Chip size : 1,52 x 1,27 x 0.1mm
Pin Out
1 - NC
2 - NC
3 - RF output
4 - NC
5 - Vdd
6 - RF input
Main Characteristics
Tamb = +25C, package form
Symbol
Parameter
Min
Typ
Max
Unit
NF
Noise figure, 7-8GHz
Noise figure, 8-13GHz
2.5
2.0
3.0
2.5
dB
G
Gain
16
19
dB
G
Gain flatness
2.0
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
CHA2063a
7-13GHz Low Noise Amplifier
Ref. : DSCHA20630096 -05-Apr-00
2/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Package form
Tamb = +25C, Vd = +4V
Symbol
Parameter
Test
Condi
tions
Min
Typ
Max
Unit
Fop
Operating frequency range
7
13
Ghz
G
Gain
16
19
dB
G
Gain flatness
2
dB
NF
Noise figure 7-8 Ghz
Noise figure 8-13 GHz
2.5
2.0
3.0
2.5
dB
VSWRin
Input VSWR
2.0:1
2.5:1
VSWRout Ouput VSWR
2.0:1
2.5:1
P1dB
Output power at 1dB gain
compression F=10 GHz
8
dBm
IP3
3rd order intercept point
18
dBm
Id
Drain bias current
40
60
mA
Absolute Maximum Ratings
Tamb = +25C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage (3)
5.0
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3)See chip biasing option page 9/10
7-13GHz Low Noise Amplifier
CHA2063a
Ref. : DSCHA20630096 -05-Apr-00
3/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Chip form
Tamb = +25C, Vd = +4V
Symbol
Parameter
Test
Condi
tions
Min
Typ
Max
Unit
Fop
Operating frequency range
(1)
7
12
Ghz
G
Gain
17
19
dB
G
Gain flatness
2
dB
NF
Noise figure 7-8 Ghz
Noise figure 8-12 GHz
2.5
2.0
3.0
2.5
dB
VSWRin
Input VSWR
(1)
2.0:1
3.0:1
VSWRout Ouput VSWR
(1)
2.0:1
3.0:1
P1dB
Output power at 1dB gain
compression F=10 GHz
8
dBm
IP3
3rd order intercept point
18
dBm
Id
Drain bias current
40
80
mA
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports. When the chip is connected with typical 0.3 nH input and
output bonding wires, the indicated parameter values are close to those of the CHA2063a
packaged product.
CHA2063a
7-13GHz Low Noise Amplifier
Ref. : DSCHA20630096 -05-Apr-00
4/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Wafer Scattering Parameters
Tamb = +25C
Vd = 4.0V ; Vg1 = Vg2 = +2.5Volt ; Id = 40mA ( A,B,C,D & E not connected )
(see chip biasing option page 9/10)
Freq
GHz
S11
dB
S11
S12
dB
S12
S21
dB
S21
S22
dB
S22
5.00
-0.86
-91.7
--65.97
-63.6
6.08
-175.1
-7.99
-131.3
5.50
-1.66
-109.6
-57.28
-77.7
11.49
152.4
-9.91
-139.3
6.00
-3.56
-131.8
-50.70
-105.2
16.03
113.4
-11.62
-143.8
6.50
-7.75
-153.2
-46.25
-137.6
18.99
69.3
-12.74
-150.7
7.00
-14.77
-159.2
-43.76
-167.7
20.39
27.7
-14.62
-164.1
7.50
-21.16
-116.9
-42.21
166.7
20.79
-9.1
-18.09
-179.8
8.00
-19.40
-79.1
-41.19
145.2
20.89
-40.9
-24.49
160.0
8.50
-16.83
-61.4
-40.39
127.8
20.76
-69.6
-34.60
38.5
9.00
-14.68
-53.7
-39.78
111.7
20.45
-95.4
-23.38
-9.1
9.50
-12.52
-52.6
-39.31
96.9
20.16
-119.5
-18.53
-23.3
10.00
-10.61
-57.4
-38.85
83.9
19.79
-141.8
-15.76
-31.8
10.50
-9.31
-65.5
-38.51
72.6
19.36
-162.9
-13.58
-40.2
11.00
-8.38
-74.2
-38.14
62.0
18.85
176.6
-11.92
-48.5
11.50
-7.71
-83.7
-37.74
52.8
18.41
157.3
-10.67
-57.1
12.00
-7.26
-93.4
-37.17
44.1
17.94
138.1
-9.74
-65.8
12.50
-6.86
-103.8
-36.62
35.4
17.40
119.5
-9.01
-73.5
13.00
-6.57
-114.6
-35.91
27.3
16.84
101.6
-8.54
-81.7
13.50
-6.34
-126.4
-35.11
18.2
16.26
83.8
-8.21
-88.8
14.00
-6.18
-139.4
-34.27
8.5
15.65
66.5
-8.05
-95.7
14.50
-6.16
-153.5
-33.41
-1.9
15.01
49.1
-8.03
-101.7
15.00
-6.25
-169.0
-32.67
-13.3
14.35
31.7
-8.02
-106.9
7-13GHz Low Noise Amplifier
CHA2063a
Ref. : DSCHA20630096 -05-Apr-00
5/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results in package
Typical Response (In package Sij ) :
Tamb = +25C
Vd = 4.0V ; ; Id = 40mA
Gain slope : -0.015dB/C Id slope : -0.025mA/C
0
5
10
15
20
25
5
6
7
8
9
10
11
12
13
14
15
Frequency (GHz)
Gain (dB)
0
1
2
3
4
5
NF (dB)
-40 C
+80 C
25 C
Typical Gain and Noise Figure measurements in package
-40
-35
-30
-25
-20
-15
-10
-5
0
5
6
7
8
9
10
11
12
13
14
15
Frequency (GHz)
S
11, S
22 (
d
B
)
S11
S22
_40 C
_40 C
+80 C
+80 C
Typical Matching measurements in package.
CHA2063a
7-13GHz Low Noise Amplifier
Ref. : DSCHA20630096 -05-Apr-00
6/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Output Power measurements in package
Tamb = +25C
Vd = 4.0V ; Id = 40mA F=10 GHz
12
13
14
15
16
17
18
19
20
-25 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9
-8
-7
-6
-5
Pin (dBm)
Gain (dB)
-6
-4
-2
0
2
4
6
8
10
Pout (dBm)
Pout
Gain
7-13GHz Low Noise Amplifier
CHA2063a
Ref. : DSCHA20630096 -05-Apr-00
7/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results in chip
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C
Vd = 4.0V ; Vg1 = Vg2 = +2.5Volt ; Id = 40mA ( A,B,C,D & E not connected )
(see chip biasing option page 9/10)
0
5
10
15
20
25
5
6
7
8
9
10
11
12
13
14
15
Frequency (GHz)
S21 (
d
B
)
0
2
4
6
8
10
NF (dB)
S21
NF
Typical Gain and Noise Figure measurements on wafer.
-40
-35
-30
-25
-20
-15
-10
-5
0
5
6
7
8
9
10
11
12
13
14
15
Frequency (dB)
S11,
S22 (
d
B
)
S11
S22
Typical Matching measurements on wafer.
CHA2063a
7-13GHz Low Noise Amplifier
Ref. : DSCHA20630096 -05-Apr-00
8/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip schematic and Pad Identification
G1 GND G2 Vd
RFin
RFout
A B C GND GND D E
1520m
1270m
Pad size 100x100m, chip thickness 100m
21
21
31
21
21
2k
1k
55
2k
1k
55
Dimensions : 1520 x 1270m
35m
7-13GHz Low Noise Amplifier
CHA2063a
Ref. : DSCHA20630096 -05-Apr-00
9/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Chip Assembly
C = 100pF
Vd
IN
OUT
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. the
internal DC electrical schematic is given in order to use these pads in a safe way.
G2
D
E
21
21
2k
1k
G1
Vd
A
B
C
21
21
31
2k
1k
55
55
The two requirements are :
N1 : Not exceed Vds = 3.5Volt (internal Drain to Source voltage).
N2 : Biased in such a way to limit Vgs positive value (internal Gate to Source voltage).
We propose two standard biasing :
Low Noise and low consumption :
Vd = 4V and B & D grounded.
All the other pads non connected ( NC ).
Idd = 40mA & Pout-1dB = +8dBm Typical.
( Equivalent to A,B,C,D,E : NC and Vd=4V ; G1=+2.5V ; G2=+2.5V).
Low Noise and high output power :
Vd = 5V and B & E grounded.
All the other pads non connected ( NC ).
Idd = 75mA & Pout-1dB = +13dBm Typical.
( Equivalent to A,B,C,D,E : NC and Vd=5V ; G1=+2.5V ; G2=+1.0V).
CHA2063a
7-13GHz Low Noise Amplifier
Ref. : DSCHA20630096 -05-Apr-00
10/10
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Package Outline
1
2
5
4
3
6
CHA2063a
AA/SS YXXXX
I
O
8.38
4.19
3.50
2.89
0.25 Typ.
1.72 Typ.
Pin 1 index
Unit : mm
General tolerance : 0.13
Date code
0.68
1.75 max
Manufacture code
u.m.s.
Ordering Information
Chip form :
CHA2063a99F/00
Package form :
CHA2063aMAF/23
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
PDF 
ZIP