CHA2066
Ref. : DSCHA20661257 -14-Sept-01
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2066 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25m gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
Main Features
Broad band performance 10-16GHz
2.0dB noise figure, 10-16GHz
16dB gain,
0.5dB gain flatness
Low DC power consumption, 50mA
20dBm 3rd order intercept point
Chip size : 1,52 x 1,08 x 0.1mm
G1 NC G2 Vd
RFin
RFout
A B C D E NC
UMS
7272
0
2
4
6
8
10
12
14
16
18
20
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Frequency ( GHz )
Gain ( dB
)
0
1
2
3
4
5
No
ise
F
i
g
u
r
e
(
d
B
)
On wafer typical measurements.
Main Characteristics
Tamb = +25C
Symbol
Parameter
Min
Typ
Max
Unit
NF
Noise figure, 10-16GHz
2.0
2.5
dB
G
Gain
14
16
dB
G
Gain flatness
0.5
1.0
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
CHA2066
10-16GHz Low Noise Amplifier
Ref. : DSCHA20661257 -14-Sept-01
2/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd = +4V
Symbol
Parameter
Test
Condi
tions
Min
Typ
Max
Unit
Fop
Operating frequency range
10
16
Ghz
G
Gain (1)
14
16
dB
G
Gain flatness (1)
0.5
1.0
dB
NF
Noise figure (1)
2.0
2.5
dB
VSWRin
Input VSWR (1)
3.0:1
VSWRout Ouput VSWR ( 11 to 16 GHz ) (1)
3.0:1
IP3
3rd order intercept point
20
dBm
P1dB
Output power at 1dB gain
compression
10
dBm
Id
Drain bias current (2)
45
mA
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the
indicated parameter values should be improved.
(2) This current is the typical value from the low noise low consumption biasing ( B & D grounded ).
Absolute Maximum Ratings
(1)
Tamb = +25C
Symbol
Parameter (1)
Values
Unit
Vd
Drain bias voltage (3)
4.5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) For a typical biasing circuit :
B & D grounded
. See chip biasing option page 7/8.
10-16GHz Low Noise Amplifier
CHA2066
Ref. : DSCHA20661257 -14-Sept-01
3/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C
Vd = 4.0V ; Vg1 = Vg2 = +1.4Volt ; Id = 45mA ( A,B,C,D & E not connected )
Freq
GHz
MS11
dB
PS11
MS12
dB
PS12
MS21
dB
PS21
MS22
dB
PS22
1.00
-0.25
-16.1
-82.22
90.1
-46.86
-148.0
-0.07
-7.1
2.00
-0.54
-31.8
-83.38
37.9
-46.99
-169.6
-0.15
-14.8
3.00
-0.88
-48.8
-84.02
17.8
-30.57
-13.6
-0.67
-24.3
4.00
-1.38
-68.9
-72.90
21.7
-12.70
-58.0
-1.41
-26.7
5.00
-2.32
-95.1
-62.06
8.4
-1.44
-96.2
-1.47
-33.3
6.00
-4.51
-131.2
-52.22
-25.9
7.98
-145.4
-2.17
-41.3
7.00
-8.90
-177.3
-45.23
-71.4
13.83
154.7
-3.17
-46.2
8.00
-12.32
122.2
-41.37
-112.2
16.32
100.4
-4.01
-50.1
9.00
-10.70
61.8
-39.16
-144.4
17.19
56.4
-4.90
-53.3
10.00
-8.32
24.9
-37.57
-170.5
17.48
20.2
-5.99
-56.8
11.00
-7.00
-1.8
-36.41
168.3
17.54
-10.5
-7.27
-59.4
12.00
-6.48
-23.4
-35.43
149.3
17.55
-38.0
-8.87
-60.5
13.00
-6.63
-42.1
-34.71
131.5
17.53
-63.6
-10.85
-57.5
14.00
-7.33
-58.2
-34.27
114.2
17.44
-88.2
-12.73
-46.1
15.00
-8.51
-71.5
-34.16
98.4
17.23
-112.3
-13.16
-27.4
16.00
-9.93
-79.7
-34.42
83.4
16.85
-135.9
-11.71
-13.0
17.00
-11.00
-82.6
-35.18
70.8
16.29
-158.6
-9.84
-8.5
18.00
-11.11
-83.8
-36.29
61.5
15.59
179.4
-8.29
-9.4
19.00
-10.35
-88.5
-37.52
58.2
14.75
158.2
-7.17
-13.1
20.00
-9.53
-100.1
-38.26
59.5
13.82
137.2
-6.34
-18.1
21.00
-8.97
-117.1
-37.98
64.4
12.71
115.9
-5.86
-23.7
22.00
-9.04
-137.0
-36.56
64.7
11.36
95.5
-5.47
-29.3
23.00
-9.70
-161.0
-35.28
56.8
9.72
75.4
-5.35
-34.7
24.00
-10.97
174.2
-34.49
47.1
7.77
56.6
-5.37
-39.3
25.00
-12.61
144.5
-34.15
36.2
5.59
39.2
-5.41
-43.4
26.00
-14.42
110.6
-34.37
24.8
3.10
23.8
-5.70
-46.2
CHA2066
10-16GHz Low Noise Amplifier
Ref. : DSCHA20661257 -14-Sept-01
4/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C
Vd = 4.0V ; Vg1 = Vg2 = +1.4Volt ; Id = 45mA ( A,B,C,D & E not connected )
-20
-15
-10
-5
0
5
10
15
20
2
4
6
8
10
12
14
16
18
20
22
24
26
Frequency ( GHz )
G
a
in, RLoss ( dB )
Gain
dBS22
dBS11
Typical Gain and Matching measurements on wafer.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
16
17
18
19
20
Frequency ( GHz )
G
a
in, NF ( dB )
GAIN
NF
Gab
Typical Gain and Noise Figure measurements on wafer.
10-16GHz Low Noise Amplifier
CHA2066
Ref. : DSCHA20661257 -14-Sept-01
5/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Test-Jig Results
Circuit Typical Response ( Test-Jig ) :
Tamb = +25C
Vd = 4.0V ; B & E Pads grounded ; Id = 55mA ( Vg1 & Vg2 NC )
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency ( GHz )
Gain & NF & RLoss ( dB )
dBS11
dBS21
dBS22
Gab
Nf_C
Typical Linear measurements in test-jig.
-2
0
2
4
6
8
10
12
14
16
18
20
-16 -14 -12 -10
-8
-6
-4
-2
0
Pin ( dBm ) at 12GHz
Pout
Gain
-2
0
2
4
6
8
10
12
14
16
18
20
-16 -14 -12 -10
-8
-6
-4
-2
0
Pin ( dBm ) at 16GHz
Pout
Gain
Typical Output Power measurements in test-jig.
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