CHA2093
Ref. : DSCHA20939042
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2093 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25m gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
Main Features
Broad band performance 20-30GHz
2.2dB noise figure, 20-30GHz
15dB gain,
0.5dB gain flatness
Low DC power consumption, 50mA
20dBm 3rd order intercept point
Chip size : 1,67 x 1,03 x 0.1mm
IN
OUT
Vg 1 Vg 2
25
50
Vd
7034
0
2
4
6
8
10
12
14
16
18
20
10
15
20
25
30
35
40
Frequency ( GHz )
Gain ( dB
)
0
1
2
3
4
5
6
7
8
9
10
No
ise
F
i
g
u
r
e
(
d
B
)
On wafer typical measurements.
Main Characteristics
Tamb = +25C
Symbol
Parameter
Min
Typ
Max
Unit
NF
Noise figure, 20-30GHz
2.2
3.0
dB
G
Gain
13
15
dB
G
Gain flatness
0.5
1.0
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
CHA2093
20-30GHz Low Noise Amplifier
Ref. : DSCHA20939042
2/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd = +4V Id=45mA
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
20
30
Ghz
G
Gain (1)
13
15
dB
G
Gain flatness (1)
0.5
1.0
dB
NF
Noise figure (1)
2.2
3.0
dB
VSWRin
Input VSWR (1)
3.0:1
VSWRout Ouput VSWR (1)
3.0:1
IP3
3rd order intercept point
20
dBm
P1dB
Output power at 1dB gain compression
13
dBm
Id
Drain bias current
50
mA
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and
output bonding wires , the indicated parameter values should be improved.
Absolute Maximum Ratings
(1)
Tamb = +25C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
20-30GHz Low Noise Amplifier
CHA2093
Ref. : DSCHA20939042
3/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C
Bias Conditions : Vd = +4V Id=45mA
Freq
GHz
MS11
dB
PS11
MS12
dB
PS12
MS21
dB
PS21
MS22
dB
PS22
10
-1.36
140
-62.29
-138.5
4.35
51.6
-16.6
151.6
11
-1.98
121.9
-58.39
-130.1
7.36
27.2
-16.75
145.1
12
-2.93
101.1
-53.05
-130.3
9.77
0.8
-16.67
137.9
13
-4.5
77.7
-49.08
-146.8
11.61
-26.2
-16.77
129.8
14
-6.8
50.1
-46.97
-163.9
12.9
-53.2
-17.47
122.7
15
-10.02
16.4
-44.52
173.2
13.86
-78.7
-17.67
122.2
16
-13.47
-30
-42.23
160.2
14.55
-103.5
-18.06
118.4
17
-14.68
-86
-40.43
138.2
15
-127
-18.55
118.4
18
-13.76
-131
-39.41
126.2
15.36
-149.8
-18.7
125.4
19
-12.83
-159.2
-38
104.7
15.69
-171.8
-17.9
131.3
20
-13.51
177.8
-36.01
92.4
15.79
165.6
-15.62
131.1
21
-14.3
170.9
-34.99
63.7
15.96
144.3
-14.48
127
22
-14.74
167.2
-34.53
46.8
15.98
122.3
-13.4
120.5
23
-14.63
168
-34.46
24.6
15.84
102.1
-12.6
116.3
24
-14.15
163.4
-33.67
6.3
15.75
80.9
-11.67
107.1
25
-13.71
155.8
-33.27
-7.6
15.6
60.2
-11.4
100.6
26
-13.42
145.5
-32.65
-29.3
15.55
40.3
-11.3
96.1
27
-13.54
124.4
-32.6
-51.5
15.46
18.6
-10.33
91.6
28
-14.43
100.2
-32.49
-68.3
15.48
-2.8
-9.98
85.7
29
-14.48
56.9
-31.69
-88.8
15.48
-27.3
-8.88
80.2
30
-12.87
5.6
-31.87
-115.7
15.24
-53
-7.99
70.5
31
-8.84
-37.4
-31.22
-140.4
14.69
-82.2
-6.86
58.1
32
-5.55
-73.3
-31.23
-171
13.43
-112.8
-6.35
40.1
33
-3.72
-101.3
-32.96
159.7
11.43
-141.9
-6.69
20.4
34
-2.5
-123.2
-34.73
134.8
9.01
-168.7
-7.51
1.5
35
-1.88
-141.2
-35.69
121.6
6.2
167.5
-8.65
-17
36
-1.52
-155.7
-35.69
98
3.35
145.9
-9.92
-36.6
37
-1.32
-167.5
-37.95
72.2
0.36
125.7
-11.17
-56.5
38
-1.07
-177.6
-38.15
56.8
-2.78
107.4
-12.15
-78.9
39
-0.93
172.6
-43.41
86.9
-6.02
89
-12.5
-103.1
40
-0.82
164.7
-43.1
76.9
-9.59
71.9
-12.27
-127.3
41
-0.68
157.2
-43.1
44.4
-13.6
55.3
-11.82
-148.5
42
-0.52
149.5
-43.23
39.6
-18.24
40.2
-10.89
-166.3
43
-0.5
142
-44.08
24
-24.6
27.2
-9.87
-179.6
44
-0.41
135.3
-45.8
21
-35.19
30.1
-8.91
167.4
45
-0.37
128.4
-45.05
18.1
-37.14
126.8
-8.04
156.2
CHA2093
20-30GHz Low Noise Amplifier
Ref. : DSCHA20939042
4/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25C
Vd = 4V ; Id = 45mA
-20
-15
-10
-5
0
5
10
15
20
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Frequency ( GHz )
G
a
in, RLoss ( dB )
DBS11
DBS22
Gain
Typical Gain and Matching measurements on wafer.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
Frequency ( GHz )
Ga
in, N
F
( dB
)
Gain
NF
Gab
Typical Gain and Noise Figure measurements on wafer.
20-30GHz Low Noise Amplifier
CHA2093
Ref. : DSCHA20939042
5/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Tamb = +25C
Vd = 4V ; Id = 45mA
0
2
4
6
8
10
12
14
16
-9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
Input power (dBm)
O
u
tput power
(
d
Bm
)
0
2
4
6
8
10
12
14
16
F=20GHz
Ga
s
s
(d
B)
Pout
Gain
0
2
4
6
8
10
12
14
16
-3
-2
-1
0
1
2
3
4
5
6
7
Input power (dBm)
O
u
tput power
(
d
Bm
)
0
2
4
6
8
10
12
14
16
F=30GHz
Ga
s
s
(d
B)
Pout
Gain
Typical Output Power and Gain measurements in test jig
(included losses of the jig)
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