CHA2095a
Ref. : DSCHA20958147
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Low Noise Very High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2095a is a four-stage monolithic low
noise amplifier. It is designed for a wide range
of applications, from military to commercial
communication systems.
The circuit is manufactured with a HEMT
process : 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performances
3.5dB Noise Figure
26dB gain
1.0dB gain flatness
Low DC power consumption, 90mA @ 3.5V
Chip size :
2.07 X 1.11 X 0.10 mm
Vd Vd
Vg 1,2 Vg 3,4
In
Out
Typical on wafer measurements :
Frequency (GHz)
Gain & NF ( dB )
0
5
10
15
20
25
30
30
35
40
45
50
Main Characteristics
Tamb. = 25C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
36
40
GHz
G
Small signal gain
22
26
dB
P1dB
Output power at 1dB gain compression
8
10
dBm
NF
Noise figure
3.5
4.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA2095a
36-40GHz Low Noise Amplifier
Ref. : DSCHA20958147
2/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd= 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
36
40
GHz
G
Small signal gain (1)
22
26
dB
G
Small signal gain flatness (1)
1.0
dB
Gsb
Gain ripple over 40MHz ( within -30 ; +75C )
0.5
dBpp
Is
Reverse isolation (1)
35
40
dB
P1dB
Output power at 1dB gain compression
8
10
dBm
VSWRin
Input VSWR (1)
2.5:1
3.0:1
VSWRout
Output VSWR (1)
2.5:1
3.0:1
NF
Noise figure (2)
3.5
4.0
dB
Vdc
DC Voltage
Vd
Vg
-2
3.5
4
+0.4
V
V
Id
Bias current (2)
90
140
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2
voltage for optimum noise figure and Vg3,4 adjusting for maximum gain.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Vg
Gate bias voltage
-2.0 to +0.4
V
Id
Drain bias current
200
mA
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
(2)
Duration < 1s.
36-40GHz Low Noise Amplifier
CHA2095a
Ref. : DSCHA20958147
3/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions :
Vd= 3.5 Volt, Vg1,2 = -0.5V, Vg3,4 = -0.3V, Id = 90 mA.
Freq.
GHz
S11
dB
S11
/
/
S12
dB
S12
/
/
S21
dB
S21
/
/
S22
dB
S22
/
/
2
-4.08
-69.3
-72.96
56.9
-33.56
147.7
-1.13
-47.0
4
-5.88
-96.9
-66.24
-10.3
-27.97
81.3
-2.97
-80.6
6
-5.85
-115.9
-64.15
-39.7
-25.45
18.8
-4.33
-103.3
8
-5.39
-131.8
-60.47
-85.0
-25.28
-35.2
-5.19
-119.2
10
-4.86
-145.7
-58.55
-120.4
-26.33
-78.4
-5.62
-131.5
12
-4.42
-158.3
-56.57
-140.8
-28.30
-111.9
-5.76
-141.3
14
-4.08
-170.2
-54.57
-164.6
-30.70
-135.8
-5.71
-150.4
16
-3.86
177.7
-51.14
165.0
-32.77
-149.9
-5.49
-158.9
18
-3.75
165.3
-50.79
138.4
-33.89
-156.4
-5.28
-167.9
20
-3.74
152.0
-50.87
107.8
-36.01
-165.6
-4.99
-177.6
21
-3.79
145.3
-50.09
105.4
-36.43
-171.9
-4.92
177.3
22
-3.86
137.4
-51.20
85.4
-38.94
-167.0
-4.85
171.4
23
-4.07
129.4
-50.03
84.9
-46.43
-171.8
-4.85
166.3
24
-4.25
120.4
-48.55
76.9
-51.42
-4.6
-4.76
159.4
25
-4.62
110.0
-48.26
52.0
-33.66
-13.4
-4.84
152.4
26
-5.10
98.1
-49.21
33.2
-25.59
-17.0
-4.99
144.9
27
-5.86
83.9
-51.02
11.8
-19.53
-20.6
-5.14
136.4
28
-6.96
66.3
-53.65
3.4
-13.18
-27.7
-5.49
126.2
29
-8.56
43.0
-55.77
2.9
-6.22
-37.3
-5.97
114.7
30
-10.85
9.2
-57.30
-12.5
1.29
-52.8
-6.73
99.1
31
-13.21
-44.9
-56.20
32.7
9.14
-76.6
-7.93
78.0
32
-12.39
-121.0
-49.77
-1.8
17.49
-114.9
-9.65
41.0
33
-11.54
161.0
-49.70
-31.8
24.39
-175.8
-11.68
-29.6
34
-17.21
82.0
-51.44
-35.1
26.82
115.0
-10.76
-104.3
35
-20.36
-35.5
-47.38
-81.5
27.07
61.7
-8.74
-142.6
36
-13.92
-105.9
-46.89
-126.8
26.81
17.6
-7.39
-171.4
37
-10.14
-139.8
-47.95
-139.2
26.72
-19.2
-7.28
167.6
38
-8.35
-170.4
-46.59
164.0
27.05
-55.3
-7.82
151.2
39
-8.59
157.4
-45.05
177.2
27.29
-91.5
-9.01
141.8
40
-10.56
122.6
-44.36
142.8
27.30
-129.0
-10.33
136.3
41
-16.13
80.3
-42.19
111.1
25.35
-164.2
-11.12
138.9
42
-22.46
-18.9
-41.27
88.1
25.09
157.8
-10.65
139.4
43
-15.92
-81.9
-40.37
70.8
24.61
128.8
-10.47
130.8
44
-12.13
-107.0
-39.92
43.0
23.99
98.5
-11.70
122.6
45
-9.91
-119.3
-40.59
19.9
23.49
68.1
-13.82
118.6
46
-8.25
-123.9
-37.38
-1.2
22.86
34.0
-16.93
129.0
47
-6.10
-125.8
-37.23
-30.8
21.97
-3.5
-15.21
174.9
48
-3.79
-139.9
-34.59
-85.7
19.73
-41.4
-10.25
172.2
49
-1.93
-154.8
-44.23
-109.4
16.66
-76.2
-7.41
152.0
50
-1.26
-167.8
-44.58
-75.7
13.11
-105.0
-6.75
136.3
51
-0.92
179.8
-41.46
-68.6
9.27
-129.2
-6.70
123.0
52
-0.73
170.5
-44.38
-120.1
5.69
-148.8
-6.99
112.4
53
-0.64
162.0
-65.24
64.9
2.23
-166.3
-7.31
103.1
54
-0.66
154.0
-51.59
-46.4
-1.42
176.6
-7.72
95.1
55
-0.63
147.5
-52.88
-54.0
-4.88
162.4
-8.06
87.4
CHA2095a
36-40GHz Low Noise Amplifier
Ref. : DSCHA20958147
4/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Wafer Measurements
Tamb = +25C
Noise figure versus drain current 60, 85, 100mA:
Wide band on wafer Sij parameter measurements :
CHA2095 Vd=3,5v Id= 60 and 85 and 100mA
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
34
35
36
37
38
39
40
frequency (Ghz)
Gain (dB)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
NF (dB)
Gain_60mA
Gain_85mA
Gain_100mA
NF_60mA
NF_85mA
NF_100mA
CHA2095 Vd=3,5v Id=90mA
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
30
35
40
45
50
55
Frequency ( GHz )
Gain & RLoss ( dB )
RLoss_IN
RLoss_OUT
36-40GHz Low Noise Amplifier
CHA2095a
Ref. : DSCHA20958147
5/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
IN
OUT
100pF
To Vdd DC Drain supply feed
To Vgs2 DC Gate supply feed
To Vgs1 DC Gate supply feed
100pF
100pF
Note : Supply feed should be capacitively bypassed.
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
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