CHA2192
Ref. : DSCHA21928155
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-26.5GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2192 is a two stages low noise
amplifier. It is designed for a wide range of
applications, from military to commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
1.8 dB noise figure
15 dB
1dB gain
10 dBm output power
Very good broadband input matching
DC power consumption, 40mA @ 3.5V
Chip size : 1.67 x 0.97 x 0.10 mm
0
2
4
6
8
10
12
14
16
18
20
16
18
20
22
24
26
28
30
32
34
Frequency ( GHz )
Ga
in
& NF
( d
B
)
NF
Gain
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
24
26.5
GHz
G
Small signal gain
14
15
dB
NF
Noise figure
1.8
2.0
dB
P1dB
Output power at 1dB gain compression
8
10
dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA2192
24-26.5GHz Low Noise Amplifier
Ref. : DSCHA21928155
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
24
26.5
GHz
G
Small signal gain (1)
14
15
dB
G
Small signal gain flatness (1)
1.0
dB
Is
Reverse isolation (1)
30
dB
NF
Noise figure
1.8
2.0
dB
P1dB
Pulsed output power at 1dB compression (1)
8
10
dBm
VSWRin
Input VSWR (1)
2.0:1
VSWRout Output VSWR (1)
2.0:1
Id
Bias current
40
60
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
150
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
24-26.5GHz Low Noise Amplifier
CHA2192
Ref. : DSCHA21928155
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On Wafer Scattering Parameters and Noise Figure
Bias Conditions : Vd = +3.5V, Id = 40 mA
Freq.
GHz
S11
dB
S11
/
/
/
/
S12
dB
S12
/
/
/
/
S21
dB
S21
/
/
/
/
S22
dB
S22
/
/
/
/
NF
1
-0,11
-15,4
-73,89
58,1
-30,22
153,9
-0,46
-24,8
2
-0,14
-30,7
-74,53
35,2
-32,18
112,1
-1,19
-48,2
3
-0,15
-45,8
-70,24
3,8
-36,24
88,2
-2,30
-68,3
4
-0,18
-61,2
-81,19
41,8
-48,79
92,5
-3,30
-86,2
5
-0,22
-76,4
-73,30
31,0
-36,60
-160,2
-4,78
-104,3
6
-0,26
-92,1
-59,10
-38,8
-25,44
11,8
-5,35
-103,2
7
-0,33
-107,7
-66,55
-77,6
-17,39
-49,1
-5,98
-124,0
8
-0,42
-124,1
-62,12
-115,8
-7,82
-73,1
-7,15
-138,5
9
-0,62
-140,9
-60,15
172,5
1,09
-105,1
-9,06
-150,3
10
-0,86
-157,3
-54,22
112,5
7,90
-151,2
-11,46
-151,2
11
-0,79
-175,1
-49,02
44,8
11,29
162,0
-11,65
-145,7
12
-0,72
162,9
-45,15
10,1
13,12
126,0
-11,54
-150,2
13
-0,92
136,4
-41,76
-22,0
14,80
96,0
-11,99
-154,2
14
-1,52
104,7
-38,85
-49,6
16,38
67,0
-12,57
-155,9
15
-2,68
67,2
-36,59
-75,1
17,54
37,5
-12,53
-156,1
16
-4,24
24,8
-34,81
-99,7
18,09
8,7
-12,65
-158,0
2,45
17
-5,70
-19,6
-33,78
-121,4
18,21
-17,0
-11,76
-161,0
2,41
18
-6,70
-59,7
-33,16
-140,0
17,92
-40,7
-12,19
-167,8
2,36
19
-7,06
-92,2
-32,74
-154,3
17,56
-60,8
-12,76
-174,9
2,08
20
-7,30
-117,7
-32,23
-167,8
17,23
-78,9
-13,95
-174,2
1,79
21
-7,86
-138,8
-31,82
-179,5
16,98
-96,5
-15,34
-178,3
1,72
22
-8,82
-155,5
-31,31
172,5
16,66
-113,0
-16,56
-162,6
1,66
23
-10,02
-165,5
-30,23
161,5
16,42
-128,7
-16,82
-160,7
1,64
24
-11,19
-168,9
-29,72
150,2
16,20
-144,6
-16,08
-144,0
1,63
25
-11,90
-168,4
-29,12
139,6
15,88
-160,2
-16,06
-138,8
1,56
26
-11,60
-163,0
-28,62
128,6
15,51
-175,2
-14,23
-130,9
1,49
27
-10,37
-161,7
-28,30
117,8
15,14
170,0
-13,06
-130,4
1,60
28
-8,73
-165,0
-28,02
106,9
14,66
155,1
-11,23
-127,6
1,58
29
-7,20
-172,1
-27,90
96,6
14,11
140,7
-10,29
-131,8
1,65
30
-6,30
179,4
-27,92
87,0
13,48
127,2
-9,22
-134,4
1,44
31
-5,14
169,7
-27,87
78,6
12,82
113,8
-8,51
-140,7
1,80
32
-4,39
159,2
-27,95
67,9
12,10
100,8
-7,82
-140,5
1,56
33
-3,68
148,6
-28,04
59,8
11,34
88,0
-7,48
-148,2
1,67
34
-3,28
138,2
-28,28
51,7
10,44
76,1
-6,85
-148,1
1,73
35
-2,83
127,8
-28,28
42,5
9,56
64,1
-6,58
-156,0
1,92
36
-2,55
118,2
-28,51
34,7
8,63
53,4
-6,37
-155,3
2,17
37
-2,20
108,3
-29,15
26,3
7,70
43,1
-6,16
-161,7
38
-1,94
98,5
-29,22
21,9
6,75
33,5
-6,17
-161,3
39
-1,89
89,3
-29,80
13,5
5,76
24,0
-5,73
-167,2
40
-1,54
80,2
-30,02
10,8
4,94
14,9
-6,01
-167,7
CHA2192
24-26.5GHz Low Noise Amplifier
Ref. : DSCHA21928155
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Wafer Measurements
Bias conditions: Vd=3.5V, Id= 40mA
-20,00
-15,00
-10,00
-5,00
0,00
5,00
10,00
15,00
20,00
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Frequency ( GHz )
Gain, NF, RLoss (
dB )
NF
Gain
dBS11
dBS22
Typical Bias Tuning for Low Noise Operation
For low noise operation, a separate access to the gate voltages of the input stage ( Vgs1 ) and of the
output stage ( Vgs2 ) is provided.
Nominal bias for low noise operation is obtained for a typical current of 20 mA for the output stage and
10 mA for the input stage ( 30 mA for the amplifier ).
The first step to bias the amplifier is to tune the Vgs1 = -1V, and Vgs2 to drive 20 mA for the full
amplifier. Then Vgs1 is reduced to obtain 30 mA of current through the amplifier.
A fine tuning of the noise figure may be obtained by modifying the Vgs1 bias voltage, but keeping the
previous value for Vgs2.
24-26.5GHz Low Noise Amplifier
CHA2192
Ref. : DSCHA21928155
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
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