CHA2266
Ref. : DSCHA22663274 - 01 Oct 03
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12.5-17GHz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2266 is a self biased, low-noise high
gain driver amplifier. It is designed mainly for
VSAT applications in Ku-band. The backside of
the chip is both RF and DC grounded. This
helps to simplify the assembly process.
The circuit is manufactured on a standard GaAs
PHEMT process, with via holes through the
substrate, air bridges and electron beam gate
lithography.
Main Features
Broad band performance 12.517GHz
2.5dB noise figure
34dB gain, +/- 0.5dB gain flatness
Low DC power consumption:130mA
Saturated output power : 16dBm
Chip size 2.32 x 1.02 x 0.1mm
Typical on wafer measurements
( Vds = 4V, Ids = 130mA )
4,1
2,9
2,5
2,0
1,9
1,6
1,5
1,5
2,2
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Frequency / GHz
G
a
in
&
R
e
t
u
r
n
lo
s
s
/
d
B
MS11
MS21
MS22
NF
Main Characteristics
Tamb=+25C
Symbol Parameter
Min Typ
Max
Unit
Fop
Operating frequency range
12.5
17
GHz
G
Small signal gain
31
34
dB
NF Noise
Figure
2.5
3
dB
P1dB
Output power at 1 dB gain
compression
14 15 dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
VD 1
VD 2
IN
OUT
CHA2266
12.5-17GHz Driver Amplifier
Ref. : DSCHA22663274 - 01 Oct 03
2/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics on wafer
Tamb = +25C, Vd = 4V Vg tuned for id=130mA
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
12.5
17
GHz
G
Small signal gain
31
34
dB
G
Small signal gain flatness
0.5
dB
NF Noise
Figure
2.5 3.0 dB
RLin
Input return loss
-10
dB
RLout
Output return loss
-10
dB
P1dB
Output power at 1 dB gain compression
14
15
dBm
Vd
Drain bias voltage
4
V
Id small
signal
Drain bias current
130
170
mA
Absolute maximum Ratings (1)
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
4.3
V
Pin
Maximum continuous input power overdrive
Maximum peak input power overdrive(2)
-15
+15
dBm
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature
-55 to +125
C
(1) Operation of this device above any of these parameters may cause permanent damage.
(2) Duration <1s
CHA2266
12.5-17 GHz Driver Amplifier
Ref. : DSCHA22663274 - 01 Oct 03
3/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Typical Chip Response ( On wafer S-parameter*)
( Vds = 4V, Ids = 130mA )
4,1
2,9
2,5
2,0
1,9
1,6
1,5
1,5
2,2
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Frequency / GHz
Ga
in & R
e
tur
n
loss / dB
MS11
MS21
MS22
NF
*
Return loss improves with bondings
.
Typical On Wafer Scattering Parameters:
Tamb = +25C, Bias Conditions: Vd = 4V, Id = 130mA
Freq/GHz MS11 PS11 MS12 PS12 MS21 PS21 MS22 PS22 NF
5.00 -0.19 -60.43 -80.46 -28.08 -9.27 55.33 -2.21 -70.44
6.00 -0.30 -74.26 -78.78 -70.24 -0.12 -24.96 -2.68 -82.41
7.00 -0.46 -89.33 -75.88 2.69 6.56 -88.05 -3.27 -95.03
8.00 -0.80
-106.32
-72.20
32.17
12.83
-142.23
-4.19
-107.99
9.00
-1.44 -125.75 -73.72 -51.84 19.02 165.74 -5.51 -118.06
10.00 -2.86
-151.22
-66.33
-115.35
25.20
108.42
-7.08 -126.35
4.06
11.00 -6.63 177.56 -70.35 -76.43 30.42 42.05 -8.70 -131.49 2.88
12.00 -17.39
153.85
-66.55
-128.54
33.53 -28.39 -9.87 -134.03 2.46
13.00 -18.06 -84.40 -65.32 168.52 34.77 -94.85 -11.53 -135.84 2.01
14.00 -12.00
-98.21 -59.86
-136.83
35.15
-154.68
-12.46 -131.75 1.92
15.00 -9.86 -113.78 -76.73 168.29 35.05 149.44 -13.41 -127.10 1.60
16.00 -9.01 -121.29 -56.32 80.85 34.64 97.72 -12.58 -114.59 1.55
17.00 -8.27
-129.83
-57.21
-170.04
34.05 46.71
-11.91
-113.66
1.46
18.00 -6.40 -139.02 -62.54 -89.64 33.15 -4.88 -11.24 -113.55 2.24
19.00 -5.55 -156.24 -65.06 53.72 31.28 -55.40 -10.37 -116.41
20.00 -4.88 -174.36 -67.73 -90.69 28.65 -101.56
-9.43 -117.46
21.00 -4.83 166.53 -55.41 154.09 25.68 -143.31
-8.53 -120.11
22.00 -5.31 149.22 -53.79 91.59 22.47 -179.42
-7.66 -125.61
23.00 -5.85 132.80 -52.72 -168.14
19.33 148.56 -7.00 -131.61
24.00 -6.91 118.54 -50.50 80.81 16.33 119.70 -6.35 -137.67
25.00 -7.45
103.68
-71.86
-7.37 13.42 93.05 -6.02 -145.44
CHA2266
12.5-17GHz Driver Amplifier
Ref. : DSCHA22663274 - 01 Oct 03
4/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Test-Jig Results
S- Parameters @ small signal
Tamb 25 C, Vd = 4V, Id = 130mA
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Frequency / GHz
Ga
in,
Re
tur
n
loss
/ d
B
S11
S21
S22
Gain & Pout vs Pin @ 14, 15 and 16GHz
Tamb = 25C,Vd =4 V, IDmax 170mA
Gain / Pout @ 14GHz
22
24
26
28
30
32
34
36
38
40
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
PIN (dBm)
G
a
in (
dB)
0
2
4
6
8
10
12
14
16
18
Po
u
t
(
d
B
m
)
,
co
mp
r
essio
n
(
d
B
)
Gain
Pout
Compression
CHA2266
12.5-17 GHz Driver Amplifier
Ref. : DSCHA22663274 - 01 Oct 03
5/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Gain / Pout @ 15GHz
22
24
26
28
30
32
34
36
38
40
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
Pin / dBm
Ga
in / d
B
0
2
4
6
8
10
12
14
16
18
Pou
t
(d
Bm
),c
o
m
p
re
s
s
io
n (d
B)
Gain
Pout
Compression
Gain / Pout @ 16GHz
22
24
26
28
30
32
34
36
38
40
-25
-23
-21
-19
-17
-15
-13
-11
-9
-7
Pin / dBm
G
a
in / dB
0
2
4
6
8
10
12
14
16
18
P
out
(
d
B
m
)
,
compr
ession (
d
B
)
Gain
Pout
Compression
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