CHA2291
Ref. : DSCHA22912149 - 29-May-021
1/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2291 is a high gain four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Frequency range : 10-18GHz
2.2dB Noise Figure.
23dB gain
Gain control range: 20dB
DC power consumption: 180mA @ 5V
Chip size : 2.49 X 1.23 X 0.10 mm
Typical on wafer measurements : Gain & NF
Main Characteristics
Tamb. = 25C
Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
10
18
GHz
G Small
signal
gain
23 dB
NF
Noise
figure
2.2 dB
Gctrl
Gain control range with Vc variation
20
dB
Id Bias
current
180 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
V5 Vd2,3,4
Vg1 Vg2 Vg3,4 Vc
0
2
4
6
8
10
12
14
16
18
20
22
24
26
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Gain (dB)
NF (dB)
10-18GHz LNA VGA
CHA2291
Ref. : DSCHA22912149 - 29-May-02
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, V5=Vd2,3,4= 5V
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
10
18
GHz
G
Small signal gain (1)
23
dB
G
Small signal gain flatness (1)
1
dB
Is
Reverse isolation (1)
60
dB
NF
Noise figure with Vc=1.2V (1)
2.2
dB
Gctrl
Gain control range versus Vc
20
dB
P1dB
Output power at 1dB compression with Vc=1.2V
10
dBm
VSWRin Input
VSWR
(1)
3.0:1
VSWRout Output
VSWR
(1)
2.5:1
Vd
DC voltage
V5= Vd2,3,4
Vc
-1.5
5
[-0.7, +1.2]
+1.3
V
V
Id1
Bias current (2) with Vc=1.2V
25
mA
Id
Bias current total (3) with Vc=1.2V
180
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjusted to 25mA with Vg1 voltage.
(3) With Id1=25mA, adjust Vg2,3,4 voltage for a total drain current around 180mA.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd
Maximum Drain bias voltage
+5.25
V
Id
Maximum drain bias current
250
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vc
Maximum Control bias voltage
+1.5
V
Vdg
Maximum drain to gate voltage (Vd - Vg)
+5.0
V
Pin
Maximum input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
+175
C
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
10-18GHz LNA VGA
CHA2291
Ref. : DSCHA22912149 - 29-May-02
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on wafer Measurements
Bias Conditions : V5=Vd2,3,4= 5V, Vg1 for Id1= 25mA, Vg2=Vg3,4= -0.5V, Vc= 1.2V
Gain & Noise Figure versus frequency
In jig Measurements
All these measurements include the jig losses (about 0.5dB on gain, 0.2dB on noise figure
and 0.3dB on output power).
Bias Conditions : V5=Vd2,3,4= 5V, Vg1 for Id1= 25mA, Vg2=Vg3,4= -0.5V, Vc= 1.2V
Gain, Return Loss & Noise Figure versus frequency
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
S21(dB)
NF (dB)
S11 (dB)
S22 (dB)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Gain (dB)
NF (dB)
10-18GHz LNA VGA
CHA2291
Ref. : DSCHA22912149 - 29-May-02
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Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Gain versus Vc
Gain versus Output power
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-1,4 -1,2
-1
-0,8 -0,6 -0,4 -0,2
0
0,2
0,4
0,6
0,8
1
1,2
1,4
Vc (V)
Gain (dB)
12GHz
14GHz
16GHz
18GHz
20GHz
18
19
20
21
22
23
24
25
26
27
28
-4
-2
0
2
4
6
8
10
12
14
Output Power (dBm)
Gai
n
(dB)
12GHz
14GHz
16GHz
10-18GHz LNA VGA
CHA2291
Ref. : DSCHA22912149 - 29-May-02
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
To V5 DC drain supply feed
To Vd2,3,4 DC drain supply feed
To Vg1 DC gate supply feed
To Vg2,3,4 DC gate supply feed
To Vc DC supply feed
120pF
120pF
120pF
120pF
120pF
RF IN
RF OUT
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended
Bond Pad:100 x 100 m
Bonding pad positions
( Chip thickness : 100m. All dimensions are in micrometers )
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