CHA2292
Ref. : DSCHA22922108 - 18-Apr.-02
1/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
17-24GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2292 is a high gain four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Frequency range : 17-24GHz
2.8dB Noise Figure.
25dB gain
Gain control range: 15dB
DC power consumption: 160mA @ 5V
Chip size : 2.32 X 1.23 X 0.10 mm
Typical on wafer measurements :Gain & NF
Main Characteristics
Tamb. = 25C
Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
17
24
GHz
G Small
signal
gain
25 dB
NF
Noise
figure
2.8 dB
Gctrl
Gain control range with Vc variation
15
dB
Id Bias
current
160 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
V5 Vd2,3,4
Vg1 Vg2,3,4 Vc
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
16
17
18
19
20
21
22
23
24
Frequency (GHz)
Gain (dB)
NF (dB)
17-24GHz LNA VGA
CHA2292
Ref. : DSCHA22922108 - 18-Apr.-02
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, V5=Vd2,3,4= 5V
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
17
24
GHz
G
Small signal gain (1)
25
dB
G
Small signal gain flatness (1)
1
dB
Is
Reverse isolation (1)
50
dB
NF
Noise figure with Vc=1.2V
2.8
dB
Gctrl
Gain control range versus Vc
15
dB
P1dB
Output power at 1dB compression with Vc=1.2V
11
dBm
VSWRin Input
VSWR
(1)
3.0:1
VSWRout Output
VSWR
(1)
2.5:1
Vd
DC voltage
V5= Vd2,3,4
Vc
-1.5
5
[-0.7, +1.2]
+1.3
V
V
Id1
Bias current (2) with Vc=1.2V
35
mA
Id
Bias current total (3) with Vc=1.2V
160
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjusted to 35mA with Vg1 voltage.
(3) With Id1=35mA, adjust Vg2,3,4 voltage for a total drain current around 160mA.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd Drain
bias
voltage
5.5
V
Vc Control
bias
voltage
1.5
V
Id Drain
bias
current
250
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
17-24GHz LNA VGA
CHA2292
Ref. : DSCHA22922108 - 18-Apr.-02
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on wafer Measurements
Bias Conditions :
V5=Vd2,3,4= 5V, Vg1 for Id1= 35mA, Vg = -0.3V, Vc=1.2V
Gain & Noise Figure versus frequency
In jig Measurements
Bias Conditions :
V5=Vd2,3,4= 5V, Vg1= Vg = -0.3V, Vc= 1.2V
All these measurements include the jig losses (about 0.5dB on gain, 0.2dB on noise figure
and 0.3dB on output power).
Gain & Output power @ 18-20 GHz
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
16
17
18
19
20
21
22
23
24
Frequency (GHz)
Gain (dB)
NF (dB)
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
-30
-25
-20
-15
-10
Input power (dBm)
Gain (dB)
Pout (dBm)
18GHz
20GHz
17-24GHz LNA VGA
CHA2292
Ref. : DSCHA22922108 - 18-Apr.-02
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Gain & Output power @ 2224 GHz
Gain & Noise Figure versus Vc
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
-30
-25
-20
-15
-10
Input power (dBm)
Gain (dB)
Pout (dBm)
22GHz
24GHz
0
1
2
3
4
5
6
7
8
9
10
17
18
19
20
21
22
23
24
Frequency ( GHz)
N
o
is
e
F
i
gur
e (
d
B
)
-10
-6
-2
2
6
10
14
18
22
26
30
Ga
i
n
(
d
B
)
NF
G
a
i
n
Vc=+1.2V
Vc=+0.8V
Vc= 0V
Vc=-0.4V
17-24GHz LNA VGA
CHA2292
Ref. : DSCHA22922108 - 18-Apr.-02
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended
Bond Pad:100 x 100 m
Bonding pad positions
( Chip thickness : 100m. All dimensions are in micrometers )
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