CHA2294
Ref. : DSCHA22942183 -01-July-02
1/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
35-40GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2294 is a high gain four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Frequency range : 35-40GHz
4.0dB Noise Figure.
22dB gain
Gain control range: 15dB
Low DC power consumption, 120mA @ 5V
Chip size : 2.32 X 1.235 X 0.10 mm
V5 Vd2 Vd3,4
Vg1 Vg2 Vg3.4 Vc
OUT
IN
Typical on wafer measurements :Gain & NF
Main Characteristics
Tamb. = 25C
Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
35
40
GHz
G Small
signal
gain
22 dB
NF Noise
figure
4
dB
Gctrl
Gain control range with Vc variation
15
dB
Id Bias
current
120 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
0
2
4
6
8
10
12
14
16
18
20
22
24
26
35
36
37
38
39
40
Frequency (GHz)
Gain (dB)
NF (dB)
35-40GHz LNA VGA
CHA2294
Ref. : DSCHA22942183 -01-July-02
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, V5=Vd2=Vd,3,4= 5V
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
35
40
GHz
G
Small signal gain (1)
22
dB
G
Small signal gain flatness (1)
1.0
dB
Is
Reverse isolation (1)
50
dB
NF
Noise figure with Vc=1.2V
4
dB
Gctrl
Gain control range versus Vc
15
dB
P1dB
Output power at 1dB compression with Vc=1.2V
11
dBm
VSWRin Input
VSWR
(1)
2.0:1
VSWRout Output
VSWR
(1)
1.5:1
Vd
DC voltage
V5= Vd2=Vd3,4
Vc
-1.5
5
[-0.7, 1.2]
1.3
V
V
Id1
Bias current (2) with Vc=1.2V
20
mA
Id
Bias current total (3) with Vc=1.2V
120
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjust to 20mA with Vg1 voltage.
(3) With Id1=20mA, adjust Vg2,3,4 voltage for a total drain current around 120mA.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vd
Maximum Drain bias voltage
+5.25
V
Id
Maximum drain bias current
200
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vc
Maximum Control bias voltage
+1.5
V
Vdg
Maximum drain to gate voltage (Vd - Vg)
+5.0
V
Pin
Maximum input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
+175
C
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
35-40GHz LNA VGA
CHA2294
Ref. : DSCHA22942183 -01-July-02
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on wafer Measurements
Bias Conditions :
V5=Vd2=Vd3,4= 5 Volt, Vg1 for Id1= 20mA, Vg2=Vg3,4 = -0.3V,
Vc=1.2V
Gain & Noise Figure versus frequency
Gain & Return Loss versus frequency
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
32
34
36
38
40
Frequency (GHz)
S21 (dB)
S11 (dB)
S22 (dB)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
35
36
37
38
39
40
Frequency (GHz)
Gain (dB)
NF (dB)
35-40GHz LNA VGA
CHA2294
Ref. : DSCHA22942183 -01-July-02
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
In jig Measurements
Bias Conditions :
V5=Vd2= Vd3,4= 5 Volt, Vg1= Vg2=Vg3,4 = -0.3V, Vc= 1.2V
Gain versus Output power
Linear Gain & Output power @ 1dB compression versus frequency
10
12
14
16
18
20
22
24
26
28
36
37
38
39
40
Frequency (GHz)
P-1dB (dBm)
Linear Gain (dB)
18
19
20
21
22
23
24
25
26
27
28
-2
0
2
4
6
8
10
12
14
Output Power (dBm)
Gain (
d
B
)
36GHz
37GHz
38GHz
39GHz
40GHz
35-40GHz LNA VGA
CHA2294
Ref. : DSCHA22942183 -01-July-02
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
To V5 DC Drain supply feed
To Vd2,3,4 DC Drain supply
To Vg1 DC Gate supply feed
To Vg2,3,4 DC Gate supply feed
To Vc DC supply feed
120pF
120pF
120pF
120pF
120pF
RF Out
RF In
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended
Bond Pad:100 x 100 m
Bonding pad positions
( Chip thickness : 100m. All dimensions are in micrometers )
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