CHA2295
Ref. : DSCHA22952240 28-Aug.-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6 - 11GHz Buffer Splitter Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2295 is a broadband buffer splitter
three-stage monolithic amplifier.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performance : 6 -11GHz
14dBm saturated output power.
18dB
1.5dB gain flatness
Good broadband matching
Low DC power consumption, 160mA @ 3.5V
Chip size : 2.26 X 1.33 X 0.10 mm
OUT 1
OUT 2
Vd
Vg
IN
Typical on wafer measurements : Gain (dB)
Main Characteristics
Tamb. = 25C
Symbol Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
6
11
GHz
G
Small signal gain
15
18
dB
Psat
Saturated Output power
12
14
dBm
Id_
small signal
Bias
current
160
220
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Gain channel 1
Gain channel 2
CHA2295
6 -11GHz Buffer Splitter Amplifier
Ref. : DSCHA22952240 28-Aug.-02
2/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd = 3.5V Vg tuned for Id=160mA
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range (1)
6
11
GHz
G
Small signal gain (1)
15
18
dB
G
Small signal gain flatness (1)
1.5
dB
Is
Reverse isolation (1)
60
dB
Ic
Isolation between channels (1)
18
dB
Psat
Saturated output power (1)
+12
+14
dBm
VSWRin
Input VSWR (1)
2.0:1
VSWRout
Output VSWR (1)
2.3:1
Id_
small signal
Bias
current
160
220
mA
(1) These values are representative for on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol Parameter
Values
Unit
Vds
Maximum Drain bias voltage
4.0
V
Ids
Maximum drain bias current
250
mA
Vgs
Gate bias voltage
-2.5 to +0.4
V
Vdg
Maximum drain to gate voltage (Vd - Vg))
+5
V
Pin
Maximum input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
+175
C
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
6 -11GHz Power splitter Amplifier
CHA2295
Ref. : DSCHA22952240 28-Aug.-02
3/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions :
Vd = 3.5 Volt, Vg tuned for Id = 160 mA.
Channel Freq.
GHz
S11
dB
S11
/
/
/
/
S12
dB
S12
/
/
/
/
S21
dB
S21
/
/
/
/
S22
dB
S22
/
/
/
/
1 1 -9,99 -23,19
-78,40
10,36
-39,63
-173,20 -0,23
-25,89
1
2
-11,40 -51,53
-71,37
40,66
-18,91
151,80 -0,85
-55,20
1
3
-14,42 -77,32
-67,59
-20,60
-0,96
96,83 -2,75
-89,94
1
4
-19,39 -95,22
-68,52
-83,56
10,46
17,07 -7,20
-127,32
1
5
-28,83 -89,06
-73,27
-117,11
15,86
-58,60 -16,28
-171,08
1
6
-26,94 -0,66
-72,47
-165,16
18,12
-122,96 -22,39
33,97
1
7
-20,17 -3,25
-82,66
-122,79
18,91
-176,92 -14,77
-9,33
1
8
-18,51 -12,26
-72,76
146,76
18,64
138,91 -13,00
-28,21
1
9
-16,84 -26,16
-85,35
-114,68
18,12
101,55 -11,93
-42,62
1
10
-15,80 -37,72
-85,69
141,79
18,15
65,89 -11,84
-55,01
1
11
-15,24 -49,47
-74,62
173,34
17,21
35,53 -11,55
-66,76
1
12
-14,62 -59,20
-70,58
-96,70
16,66
8,26 -11,58
-77,70
1
13
-14,29 -69,08
-75,31
128,54
16,03
-17,92 -11,65
-88,23
1
14
-14,07 -78,21
-69,21
178,28
15,09
-42,30 -11,81
-99,83
1
15
-14,04 -88,72
-85,79
167,97
14,48
-63,68 -12,01
-109,75
1
16
-13,77 -98,10
-66,52
175,66
13,87
-85,83 -12,31
-120,01
1
17
-13,67 -107,19
-72,49
149,93
13,10
-107,30 -12,64
-133,87
1
18
-13,20 -114,33
-65,66
142,16
12,59
-127,20 -12,86
-145,18
2 1 -10,10 -23,68
-66,30
93,30
-39,21
-173,66 -0,15
-25,79
2
2
-11,46 -52,43
-67,31
28,79
-18,83
148,76 -0,82
-55,20
2
3
-14,44 -78,77
-68,69
-62,91
-1,06
96,10 -2,73
-89,32
2
4
-19,27 -97,85
-65,70
-119,11
10,39
17,00 -7,27
-126,53
2
5
-28,28 -100,60
-67,02
-145,17
15,87
-57,50 -16,20
-169,15
2
6
-28,07 -1,39
-72,18
-160,35
18,27
-121,68 -23,31
32,29
2
7
-20,74 -3,71
-75,81
-179,95
19,04
-175,14 -15,12
-10,67
2
8
-18,43 -12,22
-79,88
69,33
18,74
141,17 -13,30
-29,59
2
9
-16,88 -24,60
-74,94
45,88
18,36
103,74 -12,12
-41,54
2
10
-15,77 -36,35
-73,11
-8,56
18,37
68,22 -12,15
-51,48
2
11
-15,15 -48,51
-82,43
24,00
17,50
37,59 -11,99
-66,12
2
12
-14,66 -58,74
-76,73
90,61
17,01
10,22 -11,43
-74,91
2
13
-14,25 -67,59
-82,52
-148,65
16,33
-14,57 -11,97
-82,63
2
14
-14,09 -77,41
-76,72
-166,31
15,50
-38,87 -11,43
-96,13
2
15
-13,95 -87,81
-66,25
-179,04
15,04
-60,92 -11,19
-102,57
2
16
-13,72 -97,30
-64,01
-169,58
14,55
-83,10 -11,61
-114,19
2
17
-13,55 -106,71
-66,64
-154,56
13,82
-104,53 -12,21
-126,36
2
18
-13,12 -113,49
-63,02
-159,40
13,27
-125,54 -11,35
-140,14
CHA2295
6 -11GHz Buffer Splitter Amplifier
Ref. : DSCHA22952240 28-Aug.-02
4/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On wafer Measurements
Bias Conditions :
Vd = 3.5 Volt, Vg tuned for Id = 160 mA.
Gain for each channel versus frequency (dB)
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Gain channel 1
Gain channel 2
Isolation between channels versus frequency (dB)
15
17
19
21
23
25
27
29
31
33
35
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
6 -11GHz Power splitter Amplifier
CHA2295
Ref. : DSCHA22952240 28-Aug.-02
5/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Gain & Return Loss channel 1 versus frequency (dB)
-26
-22
-18
-14
-10
-6
-2
2
6
10
14
18
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18
Frequency (GHz)
S21
S11
S22
Gain & Return Loss channel 2 versus frequency (dB)
-26
-22
-18
-14
-10
-6
-2
2
6
10
14
18
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18
Frequency (GHz)
S21
S11
S22
CHA2295
6 -11GHz Buffer Splitter Amplifier
Ref. : DSCHA22952240 28-Aug.-02
6/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
120pF
120pF
RF In
RF Out 1
RF Out 2
To Vd DC Drain supply feed
To Vg DC Gate supply feed
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended.
Bonding pad positions.
( Chip thickness : 100m. DC pads : 100*100 m. All dimensions are in micrometers )
6 -11GHz Power splitter Amplifier
CHA2295
Ref. : DSCHA22952240 28-Aug.-02
7/7
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Ordering Information
Chip form
:
CHA2295-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
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