CHA4042
Ref. : DSCHA40422218 -06-Aug.-02
1
/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
2334GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4042 is a three-stage pHEMT
HPA MMIC designed for point-to-point and
multi-point radio, and other Ka-band
applications. The CHA4042 provides
25dBm nominal output power at 1dB gain
compression over the 23-34GHz frequency
range, and 20dB small signal gain. This
product will be available in chip form.
Main Features
Frequency Range:
23-34GHz
Gain:
20dB
Output Power (P-1dB): 25dBm
Output TOI:
33dBm
Input Return Loss:
18dB
Output Return Loss:
11dB
Bias:
6V,
300mA
Dimensions: 1.93 x 1.09 x 0.07mm
Predicted Gain & Return
Predicted Gain & Return Loss
0
5
10
15
20
25
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency (GHz)
S
.
S
.
G
a
in
(
d
B
)
-25
-20
-15
-10
-5
0
Re
t
u
r
n
L
o
s
s
(
d
B)
Gain
Input Rloss
Output Rloss
CHA4042
23-34GHz High Power Amplifier
Ref. : DSCHA40422218 -06-Aug.-02
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Absolute Maximum Ratings
T
amb
= 25
C (1)
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal
6.25
V
Ids
Drain bias current_small signal
450
mA
Vgs
Gate bias voltage
-2 to +0.4
V
Vdg
Maximum Drain Gate voltage (Vd-Vg)
+8
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating Temperature Range (3)
-45 to +80
C
Tstg
Storage Temperature Range
-55 to +125
C
Operation of this device above any one of these parameters may cause
permanent damage.
Duration < 1 s
AuSn solder mount to CuW or CuMo carrier assumed
Predicted Output Power at 1-dB Gain Compression
18
19
20
21
22
23
24
25
26
27
28
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
OU
TP
U
T
P
O
W
E
R
(P
-1dB
) (dB
m
)
23-34GHz High Power Amplifier
CHA4042
Ref. : DSCHA40422218 -06-Aug.-02
3
/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Schematic
Typical Bias Conditions
Tamb. = 25
C
Symbol
Parameter
Values
Unit
Vd 1, 2, 3
Drain bias voltage
6.0
V
Vg 1, 2, 3
Gate bias voltage
-0.5
V
Idd
Total drain current
300
mA
RF Out
RF
Vd1
Vd2
Vd3
Vg1
Vg2
Vg3
CHA4042
23-34GHz High Power Amplifier
Ref. : DSCHA40422218 -06-Aug.-02
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Units: millimeters
Thickness: 0.070
Bond Pad #1, 7, 9: GND (0.080 x 0.080)
Bond Pad #4, 5, 11: GND (0.080 x 0.090)
Bond Pad #14: GND (0.122 x 0.080)
Bond Pad #2: VG1 (0.100 x 0.150)
Bond Pad #3: VG2 (0.100 x 0.150)
Bond Pad #6: VG3 (0.100 x 0.100)
Bond Pad #8: RF OUT (0.100 x 0.260)
Bond Pad #10: VD3 (0.100 x 0.100)
Bond Pad #12: VD2 (0.100 x 0.100)
Bond Pad #13: VD1 (0.100 x 0.100)
Bond Pad #15: RF IN (0.100 x 0.200)
.000
.000
.245
.389
1.341
1.819
.821
.970
1.341
.467
.240
.338
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
1.930
1.090
MMIC Outline & Bond Pads
Not to scale, dimensions are in millimeters
Chip size : 1930m +/-35m x 1090m +/- 35m
23-34GHz High Power Amplifier
CHA4042
Ref. : DSCHA40422218 -06-Aug.-02
5
/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
MMIC Assembly and Bonding Diagram ( not to scale )
VD3
R
F
IN
VG
VG
VG
V
g
100p
0.01
100p
V
D
VD1 VD2
100p
100p
50 Ohm line
RFin
R
F
O
U
50 Ohm line
RFout
0.01
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