CHA4092
Ref. : DSCHA40928021
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4092 is a high gain broadband three-
stage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Broadband performances : 20-30GHz
22 dBm output power ( 1dB gain comp. )
17 dB
1.5 dB gain
Chip size :
1.65 X 2.15 X 0.10 mm
Typical on wafer measurements :
-30
-25
-20
-15
-10
-5
0
5
10
15
20
15
20
25
30
35
Frequency (GHz)
(dB)
Gain
OUT
IN
Main Characteristics
Tamb. = 25C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
20
30
GHz
G
Small signal gain
16
17
dB
P1dB
Output power at 1dB gain compression
22
dBm
Id
Bias current
700
900
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA4092
20-30GHz High Power Amplifier
Ref. : DSCHA40928021
2/4
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd1,2,3 = 3.5Volts
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
20
30
GHz
G
Small signal gain (1) (2)
16
17
dB
G
Small signal gain flatness (1) (2)
1.5
dB
Is
Reverse isolation (1)
30
dB
P1db
Pulsed Output power at 1dB gain compression (1)
22
dBm
VSWRin
Input VSWR (1)
2.0:1
VSWRout
Output VSWR (1)
2.0:1
Id
Bias current
700
900
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports. In the case of a jig or a module CW mode operation, the typical
output power may be around 2dB less.
(2) Vd1,2,3 = 2Volts
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4
V
Id
Drain bias current
1200
mA
Vg
Gate bias voltage
-2 to +0.4
V
Ta
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +155
C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
20-30GHz High Power Amplifier
CHA4092
Ref. : DSCHA40928021
3/4
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Bias Conditions : Tamb = +25C, Vd = 3.5Volt, Vg = -0.2Volt.
-20
-15
-10
-5
0
5
10
15
20
25
15
20
25
30
35
Frequency (GHz)
(dB)
Gain
OUT
IN
0
4
8
12
16
20
24
-15
-10
-5
0
5
10
Input power (dBm)
Freq= 20 GHz
Gain (dB)
Pout (dBm)
0
4
8
12
16
20
24
-15
-10
-5
0
5
Input power (dBm)
Freq= 24 GHz
Gain (dB)
Pout (dBm)
0
4
8
12
16
20
24
-15
-10
-5
0
5
Input power (dBm)
Freq= 30 GHz
Gain (dB)
Pout (dBm)
CHA4092
20-30GHz High Power Amplifier
Ref. : DSCHA40928021
4/4
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed.
Bonding pad positions.
Ordering Information
:
CHA4092-99F/00
united monolithic semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of
united monolithic semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
United monolithic semiconductors S.A.S. products are not authorised for
use as critical components in life support devices or systems without express written approval from
united
monolithic semiconductors S.A.S.
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