CHA5010b
Ref. : DSCHA50100096 - 05-Apr-00
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X Band Driver Amplifier
GaAs Monolithic Microwave IC
Description
This CHA5010b is a two-stage monolithic
driver amplifier.
The circuit is manufactured with a
standard MESFET process : via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
Broadband performance : 9-10.5GHz
27dBm output power
(pulsed meas., -1dB gain compression)
15dB gain
1.5dB gain flatness
Chip size : 2,09 x 1,27 x 0.10 mm
IN
OUT
Vg
Vd
Main Characteristics
Tamb. = 25C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
9
10.5
GHz
G
Small signal gain
14
15
dB
Pout
Output power
(Pulsed meas., Pin = +13dBm)
26
27
dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA5010b
X Band Driver Amplifier
Ref. : DSCHA50100096 - 05-Apr-00
2/4
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
(1)
Tamb = +25C, Vd = 8V, Vg = -1.5V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
9
10.5
GHz
G
Small signal gain @ Pin = +5dBm
14
15
dB
G
Small signal gain flatness
1.5
dB
P1db
Pulsed output power @ Pin = +13dBm
26
27
dBm
PAE
Power added efficiency at saturation
15
%
VSWRin
Input VSWR (2)
2.0:1
Id
Bias current
520
mA
(1) These values are representative of on-wafer pulsed measurements that are made without
bonding wires at the RF ports.
(2) Vd = 3.5V, Vg = -1.5V, [S] parameter measurements.
Absolute Maximum Ratings
(1)
Tamb = +25C
Symbol
Parameter
Values
Unit
Vd
Positive supply voltage
+10
V
Pdiss
Maximum power dissipated
7.0 @ Ta = +25C
4.3 @ Ta = +70C
W
Vg
Negative supply voltage
-3.5 to 0
V
Pin
Maximum peak input power overdrive (2)
+20
dBm
Ta
Operating temperature range
-25 to +70
C
Tstg
Storage temperature range
-55 to +125
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
X Band Driver Amplifier
CHA5010b
Ref. : DSCHA50100096 - 05-Apr-00
3/4
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On Wafer Scattering Parameters
Tamb = +25C, Bias Conditions : Vd = +3.5V, Vg = -1.5V
Freq.
GHz
S11
dB
S11
/
/
S12
dB
S12
/
/
S21
dB
S21
/
/
S22
dB
S22
/
/
2.00
-5.35
-109.2
-55.93
-22.8
-17.94
61.1
-0.89
-113.5
2.50
-3.66
-124.6
-49.08
-104.8
-12.92
-13.8
-5.12
-132.4
3.00
-2.44
-139.2
-55.27
146.9
-22.15
-111.5
-1.14
-127.3
3.50
-1.64
-153.7
-65.52
-164.9
-32.08
-148.9
-0.66
-148.8
4.00
-1.23
-168.0
-65.41
174.6
-41.95
173.3
-0.79
-166.6
4.50
-1.14
178.2
-66.55
111.1
-55.23
170.7
-1.10
175.7
5.00
-1.35
164.6
-62.69
58.7
-41.77
-130.7
-1.69
157.1
5.50
-1.85
150.7
-63.21
17.3
-24.61
-130.4
-2.70
135.3
6.00
-2.76
136.2
-61.27
25.1
-7.89
177.7
-4.52
107.9
6.50
-4.02
121.9
-52.79
-30.6
0.85
102.2
-7.17
70.7
7.00
-5.77
103.0
-45.72
-76.9
6.90
45.0
-9.17
6.2
7.50
-9.90
70.0
-38.39
-139.7
13.60
-16.2
-6.75
-76.9
8.00
-30.64
-156.2
-33.93
139.3
17.69
-100.9
-7.63
-155.2
8.50
-16.21
158.2
-34.35
72.7
16.58
-171.5
-17.46
-143.4
9.00
-17.14
154.5
-34.69
26.2
15.54
138.6
-10.44
-121.2
9.50
-16.15
161.7
-34.10
-15.8
15.56
93.0
-6.80
-145.7
10.00
-14.23
140.0
-32.64
-63.2
16.05
42.9
-5.52
177.5
10.50
-14.32
79.1
-32.41
-118.3
15.80
-15.8
-6.78
121.5
11.00
-12.68
-4.8
-34.15
-174.5
13.21
-75.2
-9.67
41.0
11.50
-9.50
-53.5
-37.14
140.8
9.36
-123.9
-8.56
-26.9
12.00
-7.26
-78.7
-40.31
103.6
5.50
-164.3
-6.54
-61.6
12.50
-5.60
-94.5
-43.56
69.4
1.81
159.5
-5.09
-81.6
13.00
-4.23
-106.5
-46.48
44.1
-1.77
125.7
-4.02
-95.5
13.50
-3.17
-117.0
-49.61
13.0
-5.36
93.8
-3.23
-105.9
14.00
-2.32
-126.3
-51.81
-18.7
-8.95
63.3
-2.58
-114.3
14.50
-1.69
-134.9
-54.83
-53.3
-12.57
33.7
-2.06
-121.6
15.00
-1.28
-142.7
-59.52
-66.4
-16.24
4.8
-1.66
-128.1
15.50
-0.91
-149.7
-62.73
-147.8
-19.95
-24.0
-1.34
-134.2
16.00
-0.69
-155.9
-61.49
170.2
-24.09
-53.2
-1.07
-139.8
16.50
-0.54
-161.7
-68.06
127.7
-28.46
-82.7
-0.85
-145.0
17.00
-0.43
-166.8
-58.31
125.2
-33.59
-109.6
-0.69
-149.6
17.50
-0.40
-171.6
-58.30
126.4
-38.98
-136.5
-0.56
-154.0
18.00
-0.38
-175.6
-63.76
97.9
-45.29
-159.7
-0.45
-157.7
CHA5010b
X Band Driver Amplifier
Ref. : DSCHA50100096 - 05-Apr-00
4/4
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Mechanical Data
IN
OUT
1120
450
355
2090
35
1270
35
74
426
990
Vg1
Gnd
Vd
456
UMS
74
All dimensions are in micrometers
Pads : 100m x 100m
Thickness: 100m
10m
Ordering Information
Chip form
:
CHA5010b99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for
use as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
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