CHA5042
Ref : DSSCHA5042372 - 13 mar 03
1/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
12.75-17 GHz Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5042 is a compact three-stage
PHEMT HPA MMIC designed for VSAT ground
terminals and other radio applications. It
provides typically more than 27dBm nominal
output power at 1dB gain compression over the
12.75-17 GHz frequency range, and 30dB small
signal gain.
The circuit is manufactured with a 0.25m gate
length power PHEMT process on 70m
substrate, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form. The backside of the
chip is both RF and DC grounds. This helps to
simplify the assembly process.
This circuit is available in chip form.
Main Features
Broadband performances : 12.75-17GHz
30dB
2.5dB linear gain
>27dBm output power at 1dB comp
Chip size : 1.40 X 1.36 X 0.07mm
3
Chip size 1.9mm
2
Main Characteristics
Tamb = +25C, Vd = 8V
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
12.75
17
GHz
G Small
signal
gain
27 30 dB
P1dB
CW output power at 1dB gain compression
27
29
dBm
Vd Drain
bias
voltage
8
V
Id Bias
current
310 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
12,5
13
14
15
16
17
10
15
20
25
30
35
P
-1dB
CHA5042: V
d
=8 V, I
d
=310 mA
G
a
in (
d
B
)
a
n
d ou
tpu
t
po
w
e
r
(
d
B
m
)
Frequency (GHz)
Linear gain
Typical CHA5042 MMIC characteristic
12.75-17 GHz POWER AMPLIFIER
CHA5042
Ref. : DSSCHA5042372 - 13 mar 03
2/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical characteristics in JIG test fixture
Tamb = +25C, Vd = 8V, Id=310mA (typically Vg=-0.45V)
Symbol Parameter Min
Typ
Max
Unit
Fop
Operating frequency range
12.75
17
GHz
G
Small signal gain (1)
27
30
dB
G
Small signal gain flatness
2.5
dB
P1dB
CW output power at 1dB gain compression (1)
27
29
dBm
Psat
Saturated output power (1)
30
dBm
IP3 3
rd
order intercept point (1)
-
dBm
RLin
Input return loss (1)
-10
-6
dB
RLout
Output return loss (1)
-12
-8
dB
Is
Reverse Isolation (1)
40
dB
Vd
Drain bias voltage (2)
8
9
V
Id
Bias current (2)
310
400
mA
Vg Gate
bias
voltage
-0.45 V
(1)
These values are representative for CW measurements in JIG test fixture.
(2)
One may adjust from 8V/310 mA to 9V/400mA to increase output power by approx. 1dB
Absolute Maximum Ratings
(2)
Tamb = +25C
Symbol Parameter
Values
Unit
Vd
Drain bias voltage
9
V
Id
Maximum bias current
500
mA
Vg
Min. and max. gate bias voltage
-2.5 ~ 0
V
Pin
Maximum peak input power overdrive (3)
+3
dBm
Top
Operating temperature range
-40 to +85
C
Tstg
Storage temperature range
-55 to +125
C
(2) Operation of this device above anyone of these parameters may cause permanent damage.
(3) Duration < 1s.
12.75-17 GHz POWER AMPLIFIER
CHA5042
Ref. : DSSCHA5042372 - 13 mar 03
3/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical CW performance @ Tamb=25C
10
11
12
13
14
15
16
17
18
19
20
-20
-15
-10
-5
0
5
10
15
20
25
30
35
S
22
S
11
CHA5042: V
d
=8 V, I
d
=310mA
S
P
a
r
a
me
te
r
(dB
)
Frequency (GHz)
S
21
Typical JIG test fixture S-parameter measurements at V
d
=8 V and I
d
=310 mA
12,5
13
14
15
16
17
10
15
20
25
30
35
P
-1dB
CHA5042: V
d
=8 V, I
d
=310 mA
G
a
i
n
(d
B
)
an
d
o
u
t
put
powe
r
(d
B
m
)
Frequency (GHz)
Linear gain
Typical JIG test fixture output power at 1-dB gain compression and gain at V
d
=8 V and I
d
=310 mA
12,5
13
14
15
16
17
10
15
20
25
30
35
P
-1dB
CHA5042: V
d
=9 V, I
d
=310 mA
G
a
i
n
(
d
B
)
and
o
u
t
p
u
t
pow
er
(
d
B
m
)
Frequency (GHz)
Linear gain
Typical JIG test fixture output power at 1-dB gain compression and gain at V
d
=9 V and I
d
=310 mA
12.75-17 GHz POWER AMPLIFIER
CHA5042
Ref. : DSSCHA5042372 - 13 mar 03
4/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
Drain bias voltage
Gate bias voltage
12.75-17 GHz POWER AMPLIFIER
CHA5042
Ref. : DSSCHA5042372 - 13 mar 03
5/6
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Bonding pad positions
Dimensions: unit m
1400
35
1360
35
Thickness : 70
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