CHA5093
Ref. : DSCHA50930129 -09 May-00
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Dpartementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
22-26GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5093 is a high gain three-stage
monolithic high power amplifier. It is designed
for a wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25m gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Performances : 22-26GHz
29dBm output power
20 dB
1.5dB gain
DC power consumption, 600mA @ 6V
Chip size :
3.27 x 2.47 x 0.10 mm
-25
-20
-15
-10
-5
0
5
10
15
20
25
15
20
25
30
Frequency
Gain & RLoss (dB)
S22
S11
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
22
26
GHz
G
Small signal gain
18
20
dB
P1dB
Output power at 1dB gain compression
28
29
dBm
Id
Bias current
600
900
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHA5093
22-26GHz High Power Amplifier
Ref. : DSCHA50930129 -09 May-00
2/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25C, Vd = 6V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
22
26
GHz
G
Small signal gain (1)
18
20
dB
G
Small signal gain flatness (1)
1.5
dB
Is
Reverse isolation (1)
50
dB
P1dB
Pulsed output power at 1dB compression (1)
28
29
dBm
P03
Output power at 3dB gain compression
29.5
dBm
IP3
3
rd
order intercept point (2)
40
dBm
PAE
Power added efficiency at 1dB comp.
19
%
VSWRin
Input VSWR
2.3:1
VSWRout
Output VSWR
2.3:1
Tj
Junction temperature for 80C backside
170
C
Id
Bias current
600
900
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6
V
Id
Drain bias current
1200
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vgd
Negative gate drain voltage ( = Vg - Vd)
-8
V
Pin
Maximum peak input power overdrive (2)
+12
dBm
Ta
Operating temperature range
-40 to +80
C
Tstg
Storage temperature range
-55 to +155
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
22-26GHz High Power Amplifier
CHA5093
Ref. : DSCHA50930129 -09 May-00
3/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +2V, Vg = -0.1V
Freq
S11
S11
S12
S12
S21
S21
S22
S22
GHz
dB
/
dB
/
dB
/
dB
/
1
-0,59
169,8
-83,89
-9,2
-51,47
60
-0,31
-10,4
2
-0,38
158,6
-94,7
-97,3
-66,17
-14,6
-0,04
-22,2
3
-0,57
146,5
-90,83
40,1
-62,89
156,2
-0,04
-33,3
4
-0,92
131,5
-87,53
-65,9
-55,62
-37,1
-0,07
-44,6
5
-1,81
112,8
-91,02
-172,1
-54,96
70,7
-0,08
-55,8
6
-3,56
88,7
-88,88
-109,5
-49,83
87,6
-0,09
-66,9
7
-6,86
56,1
-93,06
-18,3
-45,68
47
-0,1
-78,2
8
-11,49
2
-89,41
-123,6
-28,33
121,7
-0,12
-90
9
-11,08
-75,8
-77,69
-57,9
-13,56
56,8
-0,2
-102,3
10
-7,5
-122,7
-73,31
-105,8
-4,53
-7,7
-0,29
-114,9
11
-5,5
-150,3
-67,65
-103,5
2,35
-66,5
-0,45
-128,5
12
-4,65
-170,2
-64,52
-128,8
9,41
-125,1
-0,84
-143,5
13
-4,49
174,7
-60,09
-138,2
15,11
147,6
-1,9
-157
14
-4,54
161,9
-57,15
-165,4
13,29
74,3
-2,08
-168,6
15
-5,01
149
-54,69
165,9
12,35
33,4
-2,48
174,5
16
-5,95
137,3
-52,41
131,9
13,33
-1,5
-3,31
155,3
17
-7,54
125,2
-54,05
103,3
15,41
-38,2
-4,38
133,5
18
-10,08
116,3
-54,29
99,6
17,95
-81,4
-5,87
109,1
19
-13,87
114,1
-53,07
70
20,07
-128,3
-7,16
81
20
-18,32
120,1
-55,69
61,4
21,69
179,9
-8,31
49
21
-21,53
-166,1
-55,41
49,3
22,71
128,5
-9,09
15,1
22
-13,29
-152,4
-53,16
28,6
23,28
77,4
-8,63
-13,6
23
-10,62
-174,2
-56,67
-23,7
23,74
24,1
-8,36
-36,8
24
-12,11
161,8
-64,73
-101,8
23,55
-30,6
-7,39
-53
25
-23,82
-175,5
-61,49
109,9
22,98
-88,4
-6,07
-67,6
26
-11,02
-104,7
-55,53
89,3
21,32
-147
-4,94
-82,5
27
-5,56
-127,3
-53,1
73
18,44
157,6
-4,11
-97
28
-3,27
-144,5
-49,46
59,2
15,1
107,4
-3,64
-109,9
29
-2,09
-159,2
-49,07
21,2
11,56
59,1
-3,14
-121,3
30
-1,33
-170,7
-47,23
2,2
7,22
12,8
-2,61
-131,9
31
-0,78
178,1
-47,06
-20,4
2,57
-29,9
-2,29
-143,6
32
-0,62
168,3
-50,11
-56,1
-2,99
-69,1
-2,08
-154,5
33
-0,41
159,5
-55,89
-68,4
-9,66
-104
-1,96
-165,5
34
-0,4
151,3
-61,66
-95,4
-22,01
-110,4
-1,99
-175,4
35
-0,38
144
-66,3
-14,3
-14,55
-69,1
-1,86
175,9
36
-0,37
136,5
-59,52
15,6
-14,65
-130,2
-1,68
164,4
37
-0,42
129,1
-57,63
-6
-18,82
-168,4
-1,73
153,9
38
-0,6
121,2
-46,51
1,1
-23,23
162,3
-1,74
143,6
39
-0,71
114,6
-45,63
-40,8
-27,11
137,4
-1,8
132
40
-0,75
106,8
-50,77
-87,7
-29,94
111,9
-1,92
121,4
CHA5093
22-26GHz High Power Amplifier
Ref. : DSCHA50930129 -09 May-00
4/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Wafer Measurements
Bias Conditions: Vd=2V, Vg= -0.2V, Id= 400mA
-25
-20
-15
-10
-5
0
5
10
15
20
25
15
20
25
30
Frequency
Gain & RLoss (dB)
S22
S11
Typical on Jig Measurements
Bias conditions: Vd=6V, Vg =-0.4V, Id=580mA
Gain & Rloss. ( dB)
-32
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
20
22
24
26
28
30
Frequency (GHz)
S11
S22
22-26GHz High Power Amplifier
CHA5093
Ref. : DSCHA50930129 -09 May-00
5/8
Specifications subject to change without notice
Route Dpartementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Jig Measurements
Bias conditions: Vd=6V, Vg =-0.4V, Id=600mA
10
12
14
16
18
20
22
24
26
28
30
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Output power (dBm)
Gain (dB)
26GHz
24GHz
27GHz
22GHz
-40
-32
-24
-16
-8
0
8
16
24
32
40
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
Input power (dBm)
Freq= 24GHz
Output power (dBm)
3rd interm. (dBm)*
* It is a standard 2 tones measurement with an input signal F1 + F2,
(F2 = F1 + 10MHz). The third order is measured at the 2F2-F1 frequency.
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